Engineering Research Equipment: Upgrading of Facilities for the Fabrication of GaAs/A1GaAs Heterostructures by MBE and Electron Beam Lithography
Engineering Research Equipment: Upgrading of Facilities for the Fabrication of GaAs/A1GaAs Heterostructures by MBE and Electron Beam Lithography
批准号:
9111897
负责人:
Mansour Shayegan
金额:
$3.02万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1991
资助国家:
美国
项目状态:
已结题
起止时间:
1991-08-15 至 1993-01-31
中文摘要
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英文摘要
Funding is provided to: (1) Upgrade an existing molecular beam epitaxy (MBE) system by adding two new furnaces and an in-situ cleaver which will allow regrowth on the cleaved edge of GaAs/A1GaAs heterostructure thin films. (2) Add a pattern generator to an existing electron microscope so that we can do electron-beam lithography. These upgrades will enhance our capability to fabricate GaAs/A1GaAs structures and devices with novel electrical and optical properties.
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Ballistic Spin Transport in 2D Carrier Systems
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依托单位:
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Multicomponent Correlated Electron Systems: Fabrication andPhysics
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依托单位:
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依托单位:
国内基金
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