Single Crystal Silicon Carbide on Silicon Substrates

长期以来，碳化硅一直被认为是耐高温、耐辐射的半导体器件的候选材料。已经成功地制作了晶体管和光电子元件，展示了该材料的潜力。这种前景看好的材料广泛应用的一个障碍是制造高质量的单晶膜的问题。以前使用化学气相沉积方法的研究在消除廉价硅衬底上的主要缺陷方面并不成功。介绍了一种新的基于离子束合成技术的制备方法。为了在硅衬底上提供单晶外延生长，提出了新的处理方法。

Silicon carbide has long received interest as a candidate for high temperature, radiation tolerant semiconductor devices. Transistors and optoelectronic components have been successfully fabricated, demonstrating the potential of the material. A barrier to the widespread use of this promising material has been the problem of fabricating good quality single crystal films. Previous research using chemical vapor deposition methods have not been successful in eliminating major defects on inexpensive silicon substrates. A new method of fabrication is described which is based on the technique of ion beam sythesis. Novel treatments are proposed in order to provide single crystal, epitaxial growth on a silicon substrate.