Single Crystal Silicon Carbide on Silicon Substrates

硅衬底上的单晶碳化硅

• 批准号: 8960691
• 负责人: Stephen Bunker
• 金额: $ 4.92万
• 依托单位: Implant Sciences Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-01-01 至 1990-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8960691&HistoricalAwards=false
• 关键词: Single; Crystal; Silicon; Carbide; Substrates

Silicon carbide has long received interest as a candidate for high temperature, radiation tolerant semiconductor devices. Transistors and optoelectronic components have been successfully fabricated, demonstrating the potential of the material. A barrier to the widespread use of this promising material has been the problem of fabricating good quality single crystal films. Previous research using chemical vapor deposition methods have not been successful in eliminating major defects on inexpensive silicon substrates. A new method of fabrication is described which is based on the technique of ion beam sythesis. Novel treatments are proposed in order to provide single crystal, epitaxial growth on a silicon substrate.

碳化硅作为耐高温、耐辐射半导体器件的候选材料一直受到人们的关注。晶体管和光电子元件已经被成功地制造出来，证明了这种材料的潜力。阻碍这种有前途的材料广泛应用的一个障碍是如何制造高质量的单晶薄膜。以前使用化学气相沉积方法的研究并没有成功地消除廉价硅衬底上的主要缺陷。介绍了一种基于离子束合成技术的新型制备方法。为了在硅衬底上提供单晶外延生长，提出了新的处理方法。