Single Crystal Silicon Carbide on Silicon Substrates

碳化硅长期以来一直受到人们的关注， 耐高温、耐辐射半导体器件。 晶体管和光电元件已成功地 这表明了材料的潜力。 一 阻碍这种有前途的材料广泛使用的障碍是， 制备高质量单晶薄膜的问题。 先前使用化学气相沉积方法的研究 没有成功地消除主要缺陷， 硅衬底。 描述了一种新的制造方法 其基于离子束合成技术。 小说 提出了处理以提供单晶， 在硅衬底上外延生长。

Silicon carbide has long received interest as a candidate for high temperature, radiation tolerant semiconductor devices. Transistors and optoelectronic components have been successfully fabricated, demonstrating the potential of the material. A barrier to the widespread use of this promising material has been the problem of fabricating good quality single crystal films. Previous research using chemical vapor deposition methods have not been successful in eliminating major defects on inexpensive silicon substrates. A new method of fabrication is described which is based on the technique of ion beam sythesis. Novel treatments are proposed in order to provide single crystal, epitaxial growth on a silicon substrate.