Investigation of Semiconductor Inner Lead Bonds

拟议工作的目标是发展 内导线的详细三维模型 TAB器件中的焊接。 这些模型将用于 确定各种粘合缺陷对 粘合剂的机械性能， 确定新的实验方法来测量 债券质量 拟议的分析技术 依赖于有限元分析， 由其他研究人员开发的分析， 唯象模型 拟议 实验技术使用磁驱动 机械手施加良好控制的剪切力， 债券的准确位置。

The goal of the proposed work is the development of detailed three-dimensional models of inner lead bonds in TAB devices. The models will be used to determine the effect of various bond defects on mechanical performance of the bond and to determine new experimental approaches to measuring bond quality. The proposed analytical technique relies on finite element analysis and incorporation of analysis developed by other researchers into a phenomenological model. The proposed experimental techniques uses a magnetically driven manipulator to apply a well controlled shear force at precise locations of the bond.