Investigation of Semiconductor Inner Lead Bonds

半导体内引线键合的研究

• 批准号: 9105325
• 负责人: Ilene Busch-Vishniac
• 金额: $ 24万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-09-01 至 1994-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9105325&HistoricalAwards=false
• 关键词: Investigation; Semiconductor; Inner; Lead; Bonds

The goal of the proposed work is the development of detailed three-dimensional models of inner lead bonds in TAB devices. The models will be used to determine the effect of various bond defects on mechanical performance of the bond and to determine new experimental approaches to measuring bond quality. The proposed analytical technique relies on finite element analysis and incorporation of analysis developed by other researchers into a phenomenological model. The proposed experimental techniques uses a magnetically driven manipulator to apply a well controlled shear force at precise locations of the bond.

所提出的工作的目标是开发详细的三维模型的内部铅键在TAB器件。该模型将用于确定各种粘结缺陷对粘结机械性能的影响，并确定测量粘结质量的新实验方法。所提出的分析技术依赖于有限元分析，并将其他研究人员开发的分析纳入现象学模型。提出的实验技术使用磁力驱动的机械手在键的精确位置施加良好控制的剪切力。