Models for Plasma Etching

等离子蚀刻模型

• 批准号: 9310408
• 负责人: Barbara Abraham-Shrauner
• 金额: $ 15.05万
• 依托单位: Washington University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-09-01 至 1997-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9310408&HistoricalAwards=false
• 关键词: Models; Plasma; Etching

9310408 Abraham-Shrauner Analytic solutions for the evolution equation of the etched surface of a semiconductor are proposed as a exciting advance. Calculations of the shape of the etching surface for both radical and ion-assisted etching in simple models are feasible in analytic form. The specific model is for etching of a trench on semiconductor such as silicon. Lie group methods for finding the symmetries of nonlinear differential equations will be used to expand the possible class of analytic solutions. These solutions will not only complement numerical simulations of etched surface evolution but in many cases will provide the user with easy expressions that can be quickly applied to the particular etching process. The electric fields due to local charging, chiefly differential charging, will be calculated by finite element analysis with the computer program Maxwell. The deflection of the ion trajectories by the local electric fields will be compared with another mechanism for the distortion, the exclusion of thermal ions with non-normal trajectories by the acceptance solid angle of the trench. *** v s t osed a a $ $ $ ( F / k k / 1 Courier Symbol & Arial 5 Courier New k h h h " h E E E f I R:\WW20USER\ABSTRACT.DOT Cassandra Queen Cassandra Queen

9310408 Abraham-Shrauner半导体蚀刻表面演化方程的解析解是一个令人兴奋的进展。 自由基和离子辅助蚀刻在简单的模型中的蚀刻表面的形状的计算是可行的解析形式。 具体模型用于在半导体（例如硅）上蚀刻沟槽。 李群方法寻找非线性微分方程的对称性将被用来扩大可能的一类解析解。 这些解决方案不仅将补充蚀刻表面演变的数值模拟，但在许多情况下，将为用户提供简单的表达式，可以快速应用于特定的蚀刻工艺。 由于局部充电，主要是差分充电的电场，将通过有限元分析与计算机程序麦克斯韦计算。 将局部电场对离子轨迹的偏转与另一种扭曲机制进行比较，即通过沟槽的接受立体角排除具有非正常轨迹的热离子。 *** v s tosed a 一 $ $ $ ( F / K K / 1件 符号Arial 5 CNew k H H H " H E E E F 我 R:\WW20USER\ABSTRACT.DOT 卡桑德拉女王卡桑德拉女王