Surface Reactivity of Radicals During Plasma Deposition of Thin Films

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9409272 Fisher The long-range goal of this research program is to gain understanding of the chemistry of low-temperature plasmas. For further progress in plasma technology to occur, it is imperative to supplement empirical knowledge with solid understanding of the basic chemical processes involved. We will determine the reactivity of plasma radicals at the surface of depositing films using the IRIS (Imaging of Radicals Interacting with Surfaces) technique that combines spatially-resolved laser-induced fluorescence with plasma molecular beams. We will examine plasma deposited thin films as well as plasma environments that produce films with desired qualities. Several analytical methods will be used to characterize plasma environments and deposited films. These include optical emission spectroscopy (OES), laser-induced fluorescence, and light-scattering in the plasmas. %%% Plasmas have many industrial applications, including thin film deposition and etching, surface modification, and polymer synthesis. Plasma deposition is particularly versatile for production of thin films and also provides environmentally-clean routes to materials. A primary aim of this work is to establish plasma environments conducive to production of particular film qualities or plasma species. This research will contribute to improving the general performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***