Support of the Tenth International Conference on Solid Films and Surfaces, Princeton, NJ, July 9-13, 2000
Support of the Tenth International Conference on Solid Films and Surfaces, Princeton, NJ, July 9-13, 2000
批准号:
0070418
负责人:
Antoine Kahn
金额:
$0.6万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-05-15 至 2001-04-30
中文摘要
关于固体薄膜和表面的会议将于2000年7月9日至13日在普林斯顿大学举行。固体薄膜和表面以及界面是具有重要技术意义的材料和活动的共同特征,包括制造电子和光电子器件以及传感器。这次会议为介绍和讨论该领域的最新实验和理论进展提供了一个论坛。它是一次为期四天的多会议会议,全体会议总结了各分领域最近的工作。此外,还组织了特邀讲座、特约讲座和海报会议。该计划侧重于以下主题:薄膜和表面的结构、电子和光学性质;薄膜生长和相关主题,如外延和粗化;有机单层和薄膜;宽带隙半导体表面和界面;纳米结构薄膜;氧化、氧化物薄膜和表面;新表征技术;太阳能电池薄膜;薄膜和表面理论。评估固体薄膜和表面以及界面的进展和现状,以及对该领域最重要的发展的最新评估,将对理解表面化学和加强电子/光子材料在计算、数据处理和通信中的利用具有重要价值。这次会议得到了卫生与公众服务部/协会方案的共同支持。***
英文摘要
A conference on solid films and surfaces will be held at Princeton University on July 9-13, 2000. Solid films and surfaces, and interfaces are a common feature of technologically important materials and activities, including the fabrication of electronic and optoelectronic devices, and sensors. This conference provides a forum for the presentation and discussion of the latest experimental and theoretical advances in the field. It is organized as a multiple session conference lasting four days, with plenary talks summarizing recent work in various sub-fields. In addition, invited talks, contributed talks and poster sessions are organized. The program emphasizes the topics: Structural, electronic and optical properties of thin films and surfaces; Thin film growth and related topics, such as epitaxy and roughening; Organic monolayers and films; Wide band gap semiconductor surfaces and interfaces; Nanostructured thin films; Oxidation, oxide films and surfaces; New characterization techniques; Thin films for solar cells; Theory of films and surfaces. %%% An evaluation of the progress and status of solid films and surfaces, and interfaces along with current assessments of the most important developments in this field will be of great value to the understanding of surface chemistry and enhanced utilization of electronic/photonic materials in computing, data processing, and communications. The conference is co-supported by the CHE/ASC propram. ***
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Gap State Compensation in Organic Semiconductors: The Ultra-Low Doping Regime
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批准号:1506097
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项目类别:Standard Grant
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资助金额:$40.0万
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财政年份:2015
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负责人:Antoine Kahn
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依托单位:
Status and perspectives for the hybrid organic-inorganic perovskite-based and -inspired systems as future energy materials
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批准号:1448886
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项目类别:Standard Grant
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资助金额:$2.4万
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财政年份:2014
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负责人:Antoine Kahn
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依托单位:
Physics and Applications of Doping in Molecular Semiconductor Films
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批准号:1005892
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项目类别:Continuing Grant
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资助金额:$36.98万
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财政年份:2010
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负责人:Antoine Kahn
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依托单位:
Fundamentals and Applications of Organic Interfaces
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批准号:0705920
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项目类别:Continuing Grant
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资助金额:$41.55万
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财政年份:2007
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负责人:Antoine Kahn
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依托单位:
Energetics and Electronical Doping at Interfaces of Molecular Films
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批准号:0408589
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项目类别:Continuing Grant
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资助金额:$40.29万
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财政年份:2004
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负责人:Antoine Kahn
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依托单位:
Organic Molecular Thin Films: Interface Electronic Properties
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批准号:0097133
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项目类别:Continuing Grant
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资助金额:$37.32万
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财政年份:2001
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负责人:Antoine Kahn
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依托单位:
III - V Nitride Surfaces and Interfaces: Atomic and Electronic Properties
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批准号:9618771
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项目类别:Continuing Grant
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资助金额:$35.33万
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财政年份:1997
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负责人:Antoine Kahn
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依托单位:
Atomic and Electronic Properties of Surfaces and Interfaces of Wide Band Gap Compound Semiconductors
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批准号:9321826
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项目类别:Continuing Grant
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资助金额:$31.5万
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财政年份:1994
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负责人:Antoine Kahn
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依托单位:
Atomic and Electronic Properties of Compound Semiconductor Surfaces and Their Interfaces with Metals
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批准号:9018521
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项目类别:Continuing Grant
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资助金额:$27.9万
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财政年份:1991
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负责人:Antoine Kahn
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依托单位:
Acquisition of an Ultra-High Vacuum System to House a Scanning Tunneling Microscope
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批准号:8906530
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项目类别:Standard Grant
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资助金额:$5.35万
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财政年份:1989
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负责人:Antoine Kahn
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依托单位:
Atomic and Electronic Properties of Compound Semiconductor Surfaces and their Interfaces with Metals
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批准号:8709531
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项目类别:Continuing Grant
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资助金额:$31.3万
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财政年份:1987
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负责人:Antoine Kahn
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依托单位:
Industry/University Cooperative Research Activity: Atomic & Electronic Structures at Metal-Semiconductor Interfaces Formed on Polar & Non-Polar Surfaces of III-V Compou
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批准号:8406820
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项目类别:Continuing Grant
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资助金额:$19.37万
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财政年份:1984
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负责人:Antoine Kahn
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依托单位:
Presidential Young Investigator Award: Metal, Insulator andSemiconductor - Semiconductor Interfaces
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批准号:8351822
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项目类别:Continuing Grant
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资助金额:$29.68万
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财政年份:1984
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负责人:Antoine Kahn
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依托单位:
Industry-University Cooperative Research: Structure and Properties of Column Iii Elements Adsorbed on Iii-V CompoundSemiconductors
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批准号:8205132
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项目类别:Continuing Grant
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资助金额:$8.28万
-
财政年份:1982
-
负责人:Antoine Kahn
-
依托单位:
海外基金