Energetics and Electronical Doping at Interfaces of Molecular Films

分子膜界面的能量学和电子掺杂

基本信息

  • 批准号:
    0408589
  • 负责人:
  • 金额:
    $ 40.29万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2004
  • 资助国家:
    美国
  • 起止时间:
    2004-07-01 至 2008-06-30
  • 项目状态:
    已结题

项目摘要

This project aims for greater understanding of basic phenomena related to interface energetics and molecular levels for carrier transport and doping of organic based electronic/photonic device structures. The approach is to link detailed measurements of interface electronic levels, injection processes, morphology and chemistry with transport data, and to develop an energy level-based rationale for choosing and evaluating materials combinations and structures for devices. %%%The project addresses basic research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new understanding and capabilities in electronic/photonic devices. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. The project is collaborative in nature and includes teaching of organic-related issues at the undergraduate, graduate and professional levels. Collaborations are established with chemists and theoreticians which will expose all parties involved, especially students, to multiple facets of the physics, chemistry and technology of organic films. The PI's research group includes graduate and undergraduate students with strong representation of minorities. In addition, the PI is instrumental in introducing and promoting the field of organic films and interfaces at meetings such as the AVS, the Science and Technology Society. The impact on education of the AVS scientific community is considerable. The PI is also heavily involved with outreach programs at Princeton University. In general, understanding material/molecular interfaces has broad and practical implications for device design and modeling, an area that industry has great need for at present. ***
该项目旨在更好地理解与有机基电子/光子器件结构的载流子传输和掺杂的界面能量学和分子水平相关的基本现象。该方法是链接接口电子水平,注入过程,形态和化学与运输数据的详细测量,并制定一个基于能级的理由选择和评估材料组合和结构的设备。该项目解决了具有高技术相关性的材料科学专题领域的基础研究问题。该研究将在基础层面上为电子/光子器件的新理解和能力贡献基础材料科学知识。该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。该项目是合作性质的,包括在本科生,研究生和专业水平的有机相关问题的教学。与化学家和理论家建立了合作,这将使所有相关方,特别是学生,接触到有机薄膜的物理,化学和技术的多个方面。PI的研究小组包括少数民族代表性很强的研究生和本科生。此外,PI还在AVS,科学技术学会等会议上介绍和推广有机薄膜和界面领域。AVS科学界对教育的影响是相当大的。PI还积极参与普林斯顿大学的外展计划。一般来说,理解材料/分子界面对器件设计和建模具有广泛的实际意义,这是目前工业界非常需要的一个领域。***

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)

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Antoine Kahn其他文献

Observation of filled states at the Fermi-level in alkali-metal intercalated organic films: dependence on substrate work function
碱金属插层有机薄膜费米能级填充态的观察:对基底功函数的依赖性
  • DOI:
    10.1016/j.elspec.2005.01.016
  • 发表时间:
    2005
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Norbert Koch;Frank Jäckel;J. Ghijsen;M. Rojas;M. Grioni;Jürgen P. Rabe;Robert L. Johnson;Antoine Kahn;J. Pireaux
  • 通讯作者:
    J. Pireaux
Relative permittivity and Hubbard <em>U</em> of pentacene extracted from scanning tunneling microscopy studies of <em>p</em>-doped films
  • DOI:
    10.1016/j.cplett.2010.06.085
  • 发表时间:
    2010-08-10
  • 期刊:
  • 影响因子:
  • 作者:
    Sieu D. Ha;Yabing Qi;Antoine Kahn
  • 通讯作者:
    Antoine Kahn
One-dimensional organic nanostructures: A novel approach based on the selective adsorption of organic molecules on silicon nanowires
  • DOI:
    10.1016/j.susc.2008.04.023
  • 发表时间:
    2008-07-01
  • 期刊:
  • 影响因子:
  • 作者:
    Eric Salomon;Antoine Kahn
  • 通讯作者:
    Antoine Kahn

Antoine Kahn的其他文献

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{{ truncateString('Antoine Kahn', 18)}}的其他基金

Gap State Compensation in Organic Semiconductors: The Ultra-Low Doping Regime
有机半导体中的能隙态补偿:超低掺杂机制
  • 批准号:
    1506097
  • 财政年份:
    2015
  • 资助金额:
    $ 40.29万
  • 项目类别:
    Standard Grant
Status and perspectives for the hybrid organic-inorganic perovskite-based and -inspired systems as future energy materials
有机-无机杂化钙钛矿基和启发系统作为未来能源材料的现状和前景
  • 批准号:
    1448886
  • 财政年份:
    2014
  • 资助金额:
    $ 40.29万
  • 项目类别:
    Standard Grant
Physics and Applications of Doping in Molecular Semiconductor Films
分子半导体薄膜中掺杂的物理和应用
  • 批准号:
    1005892
  • 财政年份:
    2010
  • 资助金额:
    $ 40.29万
  • 项目类别:
    Continuing Grant
Fundamentals and Applications of Organic Interfaces
有机界面的基础和应用
  • 批准号:
    0705920
  • 财政年份:
    2007
  • 资助金额:
    $ 40.29万
  • 项目类别:
    Continuing Grant
Organic Molecular Thin Films: Interface Electronic Properties
有机分子薄膜:界面电子特性
  • 批准号:
    0097133
  • 财政年份:
    2001
  • 资助金额:
    $ 40.29万
  • 项目类别:
    Continuing Grant
Support of the Tenth International Conference on Solid Films and Surfaces, Princeton, NJ, July 9-13, 2000
第十届国际固体薄膜和表面会议的支持,新泽西州普林斯顿,2000 年 7 月 9-13 日
  • 批准号:
    0070418
  • 财政年份:
    2000
  • 资助金额:
    $ 40.29万
  • 项目类别:
    Standard Grant
III - V Nitride Surfaces and Interfaces: Atomic and Electronic Properties
III - V 氮化物表面和界面:原子和电子特性
  • 批准号:
    9618771
  • 财政年份:
    1997
  • 资助金额:
    $ 40.29万
  • 项目类别:
    Continuing Grant
Atomic and Electronic Properties of Surfaces and Interfaces of Wide Band Gap Compound Semiconductors
宽带隙化合物半导体表面和界面的原子和电子性质
  • 批准号:
    9321826
  • 财政年份:
    1994
  • 资助金额:
    $ 40.29万
  • 项目类别:
    Continuing Grant
Atomic and Electronic Properties of Compound Semiconductor Surfaces and Their Interfaces with Metals
化合物半导体表面及其与金属界面的原子和电子性质
  • 批准号:
    9018521
  • 财政年份:
    1991
  • 资助金额:
    $ 40.29万
  • 项目类别:
    Continuing Grant
Acquisition of an Ultra-High Vacuum System to House a Scanning Tunneling Microscope
购买超高真空系统来容纳扫描隧道显微镜
  • 批准号:
    8906530
  • 财政年份:
    1989
  • 资助金额:
    $ 40.29万
  • 项目类别:
    Standard Grant

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