Energetics and Electronical Doping at Interfaces of Molecular Films
Energetics and Electronical Doping at Interfaces of Molecular Films
批准号:
0408589
负责人:
Antoine Kahn
金额:
$40.29万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2004
资助国家:
美国
项目状态:
已结题
起止时间:
2004-07-01 至 2008-06-30
中文摘要
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英文摘要
This project aims for greater understanding of basic phenomena related to interface energetics and molecular levels for carrier transport and doping of organic based electronic/photonic device structures. The approach is to link detailed measurements of interface electronic levels, injection processes, morphology and chemistry with transport data, and to develop an energy level-based rationale for choosing and evaluating materials combinations and structures for devices. %%%The project addresses basic research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new understanding and capabilities in electronic/photonic devices. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. The project is collaborative in nature and includes teaching of organic-related issues at the undergraduate, graduate and professional levels. Collaborations are established with chemists and theoreticians which will expose all parties involved, especially students, to multiple facets of the physics, chemistry and technology of organic films. The PI's research group includes graduate and undergraduate students with strong representation of minorities. In addition, the PI is instrumental in introducing and promoting the field of organic films and interfaces at meetings such as the AVS, the Science and Technology Society. The impact on education of the AVS scientific community is considerable. The PI is also heavily involved with outreach programs at Princeton University. In general, understanding material/molecular interfaces has broad and practical implications for device design and modeling, an area that industry has great need for at present. ***
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Gap State Compensation in Organic Semiconductors: The Ultra-Low Doping Regime
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批准号:1506097
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项目类别:Standard Grant
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资助金额:$40.0万
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财政年份:2015
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负责人:Antoine Kahn
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依托单位:
Status and perspectives for the hybrid organic-inorganic perovskite-based and -inspired systems as future energy materials
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批准号:1448886
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项目类别:Standard Grant
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资助金额:$2.4万
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财政年份:2014
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负责人:Antoine Kahn
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依托单位:
Physics and Applications of Doping in Molecular Semiconductor Films
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批准号:1005892
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项目类别:Continuing Grant
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资助金额:$36.98万
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财政年份:2010
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负责人:Antoine Kahn
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依托单位:
Fundamentals and Applications of Organic Interfaces
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批准号:0705920
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项目类别:Continuing Grant
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资助金额:$41.55万
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财政年份:2007
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负责人:Antoine Kahn
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依托单位:
Organic Molecular Thin Films: Interface Electronic Properties
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批准号:0097133
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项目类别:Continuing Grant
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资助金额:$37.32万
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财政年份:2001
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负责人:Antoine Kahn
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依托单位:
Support of the Tenth International Conference on Solid Films and Surfaces, Princeton, NJ, July 9-13, 2000
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批准号:0070418
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项目类别:Standard Grant
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资助金额:$0.6万
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财政年份:2000
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负责人:Antoine Kahn
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依托单位:
III - V Nitride Surfaces and Interfaces: Atomic and Electronic Properties
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批准号:9618771
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项目类别:Continuing Grant
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资助金额:$35.33万
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财政年份:1997
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负责人:Antoine Kahn
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依托单位:
Atomic and Electronic Properties of Surfaces and Interfaces of Wide Band Gap Compound Semiconductors
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批准号:9321826
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项目类别:Continuing Grant
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资助金额:$31.5万
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财政年份:1994
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负责人:Antoine Kahn
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依托单位:
Atomic and Electronic Properties of Compound Semiconductor Surfaces and Their Interfaces with Metals
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批准号:9018521
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项目类别:Continuing Grant
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资助金额:$27.9万
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财政年份:1991
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负责人:Antoine Kahn
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依托单位:
Acquisition of an Ultra-High Vacuum System to House a Scanning Tunneling Microscope
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批准号:8906530
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项目类别:Standard Grant
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资助金额:$5.35万
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财政年份:1989
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负责人:Antoine Kahn
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依托单位:
Atomic and Electronic Properties of Compound Semiconductor Surfaces and their Interfaces with Metals
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批准号:8709531
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项目类别:Continuing Grant
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资助金额:$31.3万
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财政年份:1987
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负责人:Antoine Kahn
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依托单位:
Industry/University Cooperative Research Activity: Atomic & Electronic Structures at Metal-Semiconductor Interfaces Formed on Polar & Non-Polar Surfaces of III-V Compou
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批准号:8406820
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项目类别:Continuing Grant
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资助金额:$19.37万
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财政年份:1984
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负责人:Antoine Kahn
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依托单位:
Presidential Young Investigator Award: Metal, Insulator andSemiconductor - Semiconductor Interfaces
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批准号:8351822
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项目类别:Continuing Grant
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资助金额:$29.68万
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财政年份:1984
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负责人:Antoine Kahn
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依托单位:
Industry-University Cooperative Research: Structure and Properties of Column Iii Elements Adsorbed on Iii-V CompoundSemiconductors
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批准号:8205132
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项目类别:Continuing Grant
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资助金额:$8.28万
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财政年份:1982
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负责人:Antoine Kahn
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依托单位:
海外基金