Atomic and Electronic Properties of Compound Semiconductor Surfaces and Their Interfaces with Metals

本研究涉及四面体配位化合物半导体表面及其与金属的界面的原子和电子性质。除了II-VI纤锌矿表面外，还将研究分子束外延生长的具有重要技术意义的(100)表面。除了(100)界面的结构特征外，本工作还将深入研究光电发射感生表面光电压及其对现有肖特基势垒模型有效性的影响。研究锑化镓表面及其与多种金属的界面的学科。在成功地确定了(1120)和(1010)纤锌矿的原子结构之后，将开始研究它们与完全活性物种如锑和铋的界面。其目的是确定原子有序和突变的模型界面，可用于实验和理论研究覆盖层电子结构、界面键、悬挂键和局域缺陷在这些化合物肖特基势垒形成中的作用。

This research is concerned with the atomic and electronic properties of tetrahedrally coordinated compound semiconductor surfaces and their interfaces with metals. The technologically important (100) surfaces grown by molecular beam epitaxy will be studied in addition to II-VI wurtzite surfaces. The work will focus on an in depth investigation of photoemission induced surface photovoltage and its implications on the validity of the present Schottky barrier models in addition to the structural characteristics of (100) interfaces. The study of gallium antimonide surfaces and their interfaces with a wide range of metals. Following the successful determination of the atomic structure of (1120) and (1010) wurtzite cadmium selenide and sulfide studies will be initiated of their interfaces with totally reactive species such as antimony and bismuth. The objective is to identify atomically ordered and abrupt model interfaces which can be employed in experimental and theoretical studies of the role of the overlayer electronic structure, interface bonding, dangling bonds and local defects in the formation of Schottky barriers on these compounds.