Organic Molecular Thin Films: Interface Electronic Properties

有机分子薄膜:界面电子特性

基本信息

  • 批准号:
    0097133
  • 负责人:
  • 金额:
    $ 37.32万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2001
  • 资助国家:
    美国
  • 起止时间:
    2001-03-01 至 2005-02-28
  • 项目状态:
    已结题

项目摘要

This project addresses fundamental issues related to the electronic structure of organic films and interfaces. Materials to be investigated are pi-conjugated small molecules that are principal ingredients of vacuum-deposited organic thin film devices. The goal is improved understanding of the electronic structure of organic molecular interfaces and of the behavior of these interfaces in devices, leading to more predictive and accurate modeling. The studies involve a combination of surface and interface spectroscopy techniques: photoemission and inverse photoemission spectroscopy (PES, IPES), scanning tunneling spectroscopy (STS), internal photoemission, Kelvin probe-contact potential difference (KP-CPD) and interface transport measurements. Collaborations are established in the areas of organometallic chemistry and quantum chemical calculations on materials and interfaces. %%%These studies are expected to provide improved fundamental understanding of organic films and interfaces which are critical areas important to the development of organic materials based light emitting diodes and related devices with greater performance and efficiency for applications in electronics and photonics. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***
这个项目解决了与有机薄膜和界面的电子结构有关的基本问题。被研究的材料是pi共轭小分子,它们是真空沉积有机薄膜器件的主要成分。其目标是更好地理解有机分子界面的电子结构和这些界面在设备中的行为,从而导致更具预测性和更准确的建模。这些研究涉及表面和界面光谱技术的结合:光电子能谱和反光电子能谱(PES,IPES)、扫描隧道光谱(STS)、内部光电子能谱、开尔文探测器-接触电势差(Kp-CPD)和界面输运测量。在金属有机化学和材料和界面的量子化学计算领域建立了合作关系。这些研究有望增进对有机薄膜和界面的基本了解,这些领域对于开发电子和光子学应用中具有更高性能和效率的有机材料发光二极管和相关器件非常重要。该计划的一个重要特点是通过在一个具有根本意义和技术意义的领域对学生进行培训,将研究和教育结合起来。***

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)

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Antoine Kahn其他文献

Observation of filled states at the Fermi-level in alkali-metal intercalated organic films: dependence on substrate work function
碱金属插层有机薄膜费米能级填充态的观察:对基底功函数的依赖性
  • DOI:
    10.1016/j.elspec.2005.01.016
  • 发表时间:
    2005
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Norbert Koch;Frank Jäckel;J. Ghijsen;M. Rojas;M. Grioni;Jürgen P. Rabe;Robert L. Johnson;Antoine Kahn;J. Pireaux
  • 通讯作者:
    J. Pireaux
Relative permittivity and Hubbard <em>U</em> of pentacene extracted from scanning tunneling microscopy studies of <em>p</em>-doped films
  • DOI:
    10.1016/j.cplett.2010.06.085
  • 发表时间:
    2010-08-10
  • 期刊:
  • 影响因子:
  • 作者:
    Sieu D. Ha;Yabing Qi;Antoine Kahn
  • 通讯作者:
    Antoine Kahn
One-dimensional organic nanostructures: A novel approach based on the selective adsorption of organic molecules on silicon nanowires
  • DOI:
    10.1016/j.susc.2008.04.023
  • 发表时间:
    2008-07-01
  • 期刊:
  • 影响因子:
  • 作者:
    Eric Salomon;Antoine Kahn
  • 通讯作者:
    Antoine Kahn

Antoine Kahn的其他文献

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{{ truncateString('Antoine Kahn', 18)}}的其他基金

Gap State Compensation in Organic Semiconductors: The Ultra-Low Doping Regime
有机半导体中的能隙态补偿:超低掺杂机制
  • 批准号:
    1506097
  • 财政年份:
    2015
  • 资助金额:
    $ 37.32万
  • 项目类别:
    Standard Grant
Status and perspectives for the hybrid organic-inorganic perovskite-based and -inspired systems as future energy materials
有机-无机杂化钙钛矿基和启发系统作为未来能源材料的现状和前景
  • 批准号:
    1448886
  • 财政年份:
    2014
  • 资助金额:
    $ 37.32万
  • 项目类别:
    Standard Grant
Physics and Applications of Doping in Molecular Semiconductor Films
分子半导体薄膜中掺杂的物理和应用
  • 批准号:
    1005892
  • 财政年份:
    2010
  • 资助金额:
    $ 37.32万
  • 项目类别:
    Continuing Grant
Fundamentals and Applications of Organic Interfaces
有机界面的基础和应用
  • 批准号:
    0705920
  • 财政年份:
    2007
  • 资助金额:
    $ 37.32万
  • 项目类别:
    Continuing Grant
Energetics and Electronical Doping at Interfaces of Molecular Films
分子膜界面的能量学和电子掺杂
  • 批准号:
    0408589
  • 财政年份:
    2004
  • 资助金额:
    $ 37.32万
  • 项目类别:
    Continuing Grant
Support of the Tenth International Conference on Solid Films and Surfaces, Princeton, NJ, July 9-13, 2000
第十届国际固体薄膜和表面会议的支持,新泽西州普林斯顿,2000 年 7 月 9-13 日
  • 批准号:
    0070418
  • 财政年份:
    2000
  • 资助金额:
    $ 37.32万
  • 项目类别:
    Standard Grant
III - V Nitride Surfaces and Interfaces: Atomic and Electronic Properties
III - V 氮化物表面和界面:原子和电子特性
  • 批准号:
    9618771
  • 财政年份:
    1997
  • 资助金额:
    $ 37.32万
  • 项目类别:
    Continuing Grant
Atomic and Electronic Properties of Surfaces and Interfaces of Wide Band Gap Compound Semiconductors
宽带隙化合物半导体表面和界面的原子和电子性质
  • 批准号:
    9321826
  • 财政年份:
    1994
  • 资助金额:
    $ 37.32万
  • 项目类别:
    Continuing Grant
Atomic and Electronic Properties of Compound Semiconductor Surfaces and Their Interfaces with Metals
化合物半导体表面及其与金属界面的原子和电子性质
  • 批准号:
    9018521
  • 财政年份:
    1991
  • 资助金额:
    $ 37.32万
  • 项目类别:
    Continuing Grant
Acquisition of an Ultra-High Vacuum System to House a Scanning Tunneling Microscope
购买超高真空系统来容纳扫描隧道显微镜
  • 批准号:
    8906530
  • 财政年份:
    1989
  • 资助金额:
    $ 37.32万
  • 项目类别:
    Standard Grant

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Collaborative Research: Developing metal-organic molecular beam epitaxy (MOMBE) for chalcogenide semiconductor thin film synthesis
合作研究:开发用于硫族化物半导体薄膜合成的金属有机分子束外延(MOMBE)
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合作研究:开发用于硫族化物半导体薄膜合成的金属有机分子束外延(MOMBE)
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全面的分子动力学模拟,重现有机半导体薄膜成核和生长的整个过程
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