Fundamentals and Applications of Organic Interfaces
有机界面的基础和应用
基本信息
- 批准号:0705920
- 负责人:
- 金额:$ 41.55万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2007
- 资助国家:美国
- 起止时间:2007-07-01 至 2011-06-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Technical: This project addresses fundamental mechanisms that control the electronic structure of organic interfaces and electrical doping, and the extent to which these mechanisms are modified or inhibited by environmental factors. The project emphasizes a comprehensive approach, bringing together electronic structure data and theory, interface chemistry and charge carrier transport data in a self-consistent fashion. N-type electrical doping using low ionization energy molecules as alternatives to fast diffusing alkali metals will be included in the study. Additionally, several classes of molecules, such as cobaltocenes and derivatives, and new delivery methods will be investigated. Doping (both n- and p-type) of crystalline layers will also be investigated at the molecular level via scanning probe techniques. This project involves a multi-technique (ultra-violet and X-ray photoemission spectroscopy, inverse photoemission spectroscopy, scanning tunneling microscopy and spectroscopy, current- and capacitance-voltage measurements) approach to fully characterize electronic, chemical and charge transport properties of interfaces. Collaborations with chemists, device physicists and theoreticians are established. Non-technical: The project addresses basic research issues in electronics/photonics materials science with high technological relevance, and is expected to provide important opportunities for student training. It will expose graduate and undergraduate students to a range of fundamental interface science problems as well as some practical device issues, to a variety of experimental techniques, and to different research environments through collaborations in chemistry and theory of electronic structure. Through his participation in outreach programs at Princeton University, short courses given to industry, and involvement in scientific societies, the PI will remain active in the teaching and dissemination of knowledge in the field of organic electronics.
技术:该项目涉及控制有机界面的电子结构和电掺杂的基本机制,以及这些机制被环境因素修改或抑制的程度。该项目强调一种全面的方法,以自洽的方式将电子结构数据和理论、界面化学和电荷载流子传输数据结合在一起。使用低电离能分子作为快速扩散碱金属替代品的N型电掺杂将被包括在研究中。此外,还将研究几类分子,如钴烯和衍生物,以及新的递送方法。晶体层的掺杂(n型和p型)也将通过扫描探针技术在分子水平上进行研究。该项目涉及多种技术(紫外线和X射线光电子能谱、反向光电子能谱、扫描隧道显微镜和光谱学、电流和电容-电压测量),以全面表征界面的电子、化学和电荷传输特性。与化学家、设备物理学家和理论家建立了合作关系。非技术性:该项目涉及具有高度技术相关性的电子/光子学材料科学的基础研究问题,预计将为学生培训提供重要机会。它将通过化学和电子结构理论的合作,使研究生和本科生接触到一系列基本的界面科学问题以及一些实用的器件问题,接触到各种实验技术,并接触到不同的研究环境。通过参加普林斯顿大学的外展项目、向工业界提供的短期课程以及参与科学协会,PI将继续积极地教授和传播有机电子领域的知识。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Antoine Kahn其他文献
Observation of filled states at the Fermi-level in alkali-metal intercalated organic films: dependence on substrate work function
碱金属插层有机薄膜费米能级填充态的观察:对基底功函数的依赖性
- DOI:
10.1016/j.elspec.2005.01.016 - 发表时间:
2005 - 期刊:
- 影响因子:0
- 作者:
Norbert Koch;Frank Jäckel;J. Ghijsen;M. Rojas;M. Grioni;Jürgen P. Rabe;Robert L. Johnson;Antoine Kahn;J. Pireaux - 通讯作者:
J. Pireaux
Relative permittivity and Hubbard <em>U</em> of pentacene extracted from scanning tunneling microscopy studies of <em>p</em>-doped films
- DOI:
10.1016/j.cplett.2010.06.085 - 发表时间:
2010-08-10 - 期刊:
- 影响因子:
- 作者:
Sieu D. Ha;Yabing Qi;Antoine Kahn - 通讯作者:
Antoine Kahn
One-dimensional organic nanostructures: A novel approach based on the selective adsorption of organic molecules on silicon nanowires
- DOI:
10.1016/j.susc.2008.04.023 - 发表时间:
2008-07-01 - 期刊:
- 影响因子:
- 作者:
Eric Salomon;Antoine Kahn - 通讯作者:
Antoine Kahn
Antoine Kahn的其他文献
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{{ truncateString('Antoine Kahn', 18)}}的其他基金
Gap State Compensation in Organic Semiconductors: The Ultra-Low Doping Regime
有机半导体中的能隙态补偿:超低掺杂机制
- 批准号:
1506097 - 财政年份:2015
- 资助金额:
$ 41.55万 - 项目类别:
Standard Grant
Status and perspectives for the hybrid organic-inorganic perovskite-based and -inspired systems as future energy materials
有机-无机杂化钙钛矿基和启发系统作为未来能源材料的现状和前景
- 批准号:
1448886 - 财政年份:2014
- 资助金额:
$ 41.55万 - 项目类别:
Standard Grant
Physics and Applications of Doping in Molecular Semiconductor Films
分子半导体薄膜中掺杂的物理和应用
- 批准号:
1005892 - 财政年份:2010
- 资助金额:
$ 41.55万 - 项目类别:
Continuing Grant
Energetics and Electronical Doping at Interfaces of Molecular Films
分子膜界面的能量学和电子掺杂
- 批准号:
0408589 - 财政年份:2004
- 资助金额:
$ 41.55万 - 项目类别:
Continuing Grant
Organic Molecular Thin Films: Interface Electronic Properties
有机分子薄膜:界面电子特性
- 批准号:
0097133 - 财政年份:2001
- 资助金额:
$ 41.55万 - 项目类别:
Continuing Grant
Support of the Tenth International Conference on Solid Films and Surfaces, Princeton, NJ, July 9-13, 2000
第十届国际固体薄膜和表面会议的支持,新泽西州普林斯顿,2000 年 7 月 9-13 日
- 批准号:
0070418 - 财政年份:2000
- 资助金额:
$ 41.55万 - 项目类别:
Standard Grant
III - V Nitride Surfaces and Interfaces: Atomic and Electronic Properties
III - V 氮化物表面和界面:原子和电子特性
- 批准号:
9618771 - 财政年份:1997
- 资助金额:
$ 41.55万 - 项目类别:
Continuing Grant
Atomic and Electronic Properties of Surfaces and Interfaces of Wide Band Gap Compound Semiconductors
宽带隙化合物半导体表面和界面的原子和电子性质
- 批准号:
9321826 - 财政年份:1994
- 资助金额:
$ 41.55万 - 项目类别:
Continuing Grant
Atomic and Electronic Properties of Compound Semiconductor Surfaces and Their Interfaces with Metals
化合物半导体表面及其与金属界面的原子和电子性质
- 批准号:
9018521 - 财政年份:1991
- 资助金额:
$ 41.55万 - 项目类别:
Continuing Grant
Acquisition of an Ultra-High Vacuum System to House a Scanning Tunneling Microscope
购买超高真空系统来容纳扫描隧道显微镜
- 批准号:
8906530 - 财政年份:1989
- 资助金额:
$ 41.55万 - 项目类别:
Standard Grant
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