III - V Nitride Surfaces and Interfaces: Atomic and Electronic Properties

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9618771 Kahn This project addresses fundamental surface and interface issues in III-V nitrides, including the formation of metal-nitride barriers and heterojunctions, and the band offsets and electronic state density at these junctions. The approach is to link information obtained from a wide range of surface spectroscopy and microscopy techniques to electrical measurements on device-like structures. Both n- and p-doped GaN, AlN, AlGaN and In GaN layers grown by MOCVD will be used in the study. %%% The project addresses basic research issues in a topical area of materials science having high technological relevance, compact and efficient light sources in the blue-green spectral region. The research will contribute basic materials science knowledge at a fundamental level to important aspects of electronic/photonic devices. Additionally, the fundamental knowledge and understanding gained from the research is expected to contribute to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***