Atomic and Electronic Properties of Compound Semiconductor Surfaces and their Interfaces with Metals

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This is an indepth study of the atomic geometry and electronic structure of several low and high index gallium arsenide surfaces prepared by molecular beam epitaxy (MBE). The use of MBE-grown surfaces with in-situ probing of structure, composition, and band bending will enhance the work on surface reconstruction mechanisms and surface unstabilities, encountered with some high- index surfaces. The investigation of Schottky barriers formation at low temperature (LT=70-100oK) will be continued. The results obtained on these interfaces where metal clustering, chemical reactions and interdiffusion are inhibited, are the first to suggest that several independent mechanisms, diversly affected by the temperature must be invoked to explain pinning on n- and p- type samples. This work will be extended by studying interfaces formed at low temperature between gallium arsenide and reactive transition metals. This study will involve complete characterizations of low temperature interface morphology, atomic geometry, rate of reaction, and Fermi level pinning. A generalization of the results found during the past three years could be expected to have a substantial impact on current models of Schottky barriers and be of importance to the microelectronic industry.