Acquisition of an Ultra-High Vacuum System to House a Scanning Tunneling Microscope

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Two ultra-high-vacuum chambers for a scanning tunneling microscope will be constructed. The system will include an Arion bombardment gun, a precision manipulator, a load-lock system, pumping stations and an isolation table. The equipment will greatly enhance the power of the STM to examine problems relevant to semiconductor surfaces and interfaces. It will be used in a program of research including the following topics: (i) atomic relaxation and surface electronic structure, (ii) metal- semiconductor interfaces, (iii) adatom-induced relaxation of semiconductor surfaces and Schottky barrier formation, and (iv) epitaxial growth of semiconductors and insulators, e.g., semiconductor heterojunctions and semiconductor-fluoride interfaces grown by molecular-beam epitaxy.