Acquisition of an Ultra-High Vacuum System to House a Scanning Tunneling Microscope

购买超高真空系统来容纳扫描隧道显微镜

• 批准号: 8906530
• 负责人: Antoine Kahn
• 金额: $ 5.35万
• 依托单位: Princeton University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-11-15 至 1991-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8906530&HistoricalAwards=false
• 关键词: Acquisition; Ultra; Vacuum; System; House

Two ultra-high-vacuum chambers for a scanning tunneling microscope will be constructed. The system will include an Arion bombardment gun, a precision manipulator, a load-lock system, pumping stations and an isolation table. The equipment will greatly enhance the power of the STM to examine problems relevant to semiconductor surfaces and interfaces. It will be used in a program of research including the following topics: (i) atomic relaxation and surface electronic structure, (ii) metal- semiconductor interfaces, (iii) adatom-induced relaxation of semiconductor surfaces and Schottky barrier formation, and (iv) epitaxial growth of semiconductors and insulators, e.g., semiconductor heterojunctions and semiconductor-fluoride interfaces grown by molecular-beam epitaxy.

将建造两个用于扫描隧道显微镜的超高真空室。 该系统将包括Arion轰击枪、精密机械手、负载锁定系统、泵站和隔离台。 该设备将大大增强STM检查半导体表面和界面相关问题的能力。 它将用于包括以下主题的研究计划：（i）原子弛豫和表面电子结构，（ii）金属-半导体界面，（iii）吸附原子引起的半导体表面弛豫和肖特基势垒形成，以及（iv）半导体和绝缘体的外延生长，例如半导体异质结和 通过分子束外延生长的半导体-氟化物界面。