Collaborative Research: Advanced High Dielectric Constant Gate Materials for CMOS Devices

合作研究：用于 CMOS 器件的先进高介电常数栅极材料

• 批准号: 0223106
• 负责人: Marvin White
• 金额: $ 27万
• 依托单位: Lehigh University
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-09-01 至 2005-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0223106&HistoricalAwards=false
• 关键词: Collaborative; Research; Advanced; Dielectric; Constant

0223106WhiteThe project between Texas Tech University (TTU) and Lehigh University (LU) is a 'collaborative' program to conduct experimental and theoretical research in the area of advanced, ultra-thin, high dielectric constant (high-K) gate materials for CMOS devices. This project is motivated by the drive for advanced CMOS integrated circuits with sub-micron feature sizes and the need to scale the gate dielectric, while preventing quantum mechanical gate current between the silicon inversion layer and the overlying gate electrode. The Si02 gate dielectric will be replaced with a single or dual -dielectric film consisting of one or more monolayers of SiO2 to form the interfacial transition region covered with a high dielectric constant (high-K) insulator. The rationale for a collaborative proposal effort lies in the capabilities of the two universities with Texas Tech University expertise in high-K gate materials and Lehigh University integrating these materials into an advanced gate insulator for CMOS devices. Texas Tech University will form high-K, Hf02 or ZrO2 gate dielectrics with a custom electron-beam deposition system to be incorporated into advanced CMOS devices and test structures fabricated at Lehigh University. The collaborative project will employ the combined and complementary analytical techniques at both universities, such as reflection high-energy electron diffraction (RHEED) and low energy electron diffraction (LEED) at TTU combined with angle resolved photoelectron spectroscopy (ARXPS) and high-resolution transmission electron microscopy (HRTEM) at LU. Electrical characterization will be performed with unique test structures and measurement techniques to determine carrier trapping in the high-K dielectrics. The PI's multidisciplinary faculty will bring together students from different departments and universities in a project to foster a broad research and educational experience. The project is enhanced with close collaboration and outreach to industry.

德克萨斯理工大学（TTU）和里海大学（LU）之间的项目是一个“合作”项目，在CMOS器件的先进，超薄，高介电常数（高k）栅极材料领域进行实验和理论研究。该项目的动机是对具有亚微米特征尺寸的先进CMOS集成电路的驱动，以及缩放栅极介电介质的需要，同时防止硅反转层和上覆栅极之间的量子力学门电流。二氧化硅栅极电介质将被由一层或多层SiO2组成的单或双介电膜取代，形成覆盖有高介电常数（高k）绝缘体的界面过渡区。合作提案的基本原理在于两所大学的能力，德克萨斯理工大学在高k栅极材料方面的专业知识和里海大学将这些材料集成到CMOS器件的先进栅极绝缘体中。德克萨斯理工大学将使用定制的电子束沉积系统形成高钾、Hf02或ZrO2栅极电介质，并将其集成到先进的CMOS器件和里海伊大学制造的测试结构中。该合作项目将采用两所大学的综合和互补的分析技术，如TTU的反射高能电子衍射（RHEED）和低能电子衍射（LEED），以及LU的角度分辨光电子能谱（ARXPS）和高分辨率透射电子显微镜（HRTEM）。电学表征将使用独特的测试结构和测量技术来确定高k介电体中的载流子捕获。PI的多学科教师将把来自不同院系和大学的学生聚集在一个项目中，以促进广泛的研究和教育经验。该项目通过与工业界的密切合作和外展而得到加强。