EAGER: Characterization and Modeling of Nanoscaled Semiconductor Devices

EAGER：纳米级半导体器件的表征和建模

• 批准号: 0946439
• 负责人: Marvin White
• 金额: $ 15万
• 依托单位: Lehigh University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-09-01 至 2011-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0946439&HistoricalAwards=false
• 关键词: EAGER; Characterization; Modeling; Nanoscaled; Semiconductor

EAGER: Characterization and Modeling of Nanoscaled Semiconductor DevicesMarvin H. WhiteLehigh UniversityAbstractWe propose a EAGER program to apply a new approach to study low-field carrier mobilityin high-K, nanoscaled, semiconductor MOSFET devices ? devices with Coulombscattering centers in the high-K dielectrics. This concept will permit the evaluation of lowfieldcarrier transport in nanoscaled devices with a two-terminal structure rather than thefabrication of a three-terminal device structure. We will use two hetero-insulator devicestructures: (1) a nonvolatile, ?charge-trap?, nanoscaled MANOS semiconductor memorydevice with programmable charge storage and (2) a metal gate, high-K, nanoscaledMOS transistor with fixed charge in the high-K dielectric.The intellectual merit involves the integration of research and education to explore lowfield,carrier transport in high-K nanoscaled devices with a simple two-terminalconductance and capacitance measurement, thereby, alleviating the need to fabricatethree-terminal devices complete with ohmic contacts. We will characterize the influenceof Coulomb charge in experimental high high-K devices on carrier transport by varyingthe sign, magnitude and position of the charge. Two terminal measurements will becompared with three-terminal measurements on completed device structures. Theexperimental and theoretical studies involve device physics, chemistry, materialsscience and modeling at the nanoscale.The broader aspects in our program will advance diversity in the nanoelectronicsworkforce and provide intellectual technology transfer, integration of research andeducation, and promotion of partnerships with the industrial sector of the economy. Wehave developed excellent educational and outreach programs to increase diversity withopportunities in nanoelectronics, especially semiconductor devices ? an important areato maintain US leadership in a global economy. Our research provides an excellentvehicle for minority student outreach and partnerships with industry.The transformative nature of our research lies in a new approach to model low fieldtransport with simple two-terminal structures, which can be easily fabricated in thelaboratory without extensive photolithographic equipment. The concept is applicable tothe study of carrier transport in a broad range of emerging nanoscaled devices and willaid rapid and innovative advances in the technology

EAGER：纳米级半导体器件的表征和建模。怀特利哈伊大学摘要我们提出了一个EAGER计划，应用一种新的方法来研究低场载流子迁移率在高K，纳米尺度，半导体MOSFET器件？在高K值区具有库仑散射中心的器件。这一概念将允许评估低场载流子输运的纳米级器件与两个终端结构，而不是thefacial制造的三端器件结构。我们将使用两种异质绝缘体器件结构：（1）非易失性，？电荷陷阱具有可编程电荷存储的纳米级MANOS半导体存储器件和（2）在高K电介质中具有固定电荷的金属栅、高K、纳米级MOS晶体管。其智力价值涉及研究和教育的结合，以探索低场、高K纳米级器件中的载流子输运，从而，减轻了制造具有欧姆接触的三端器件的需要。我们将通过改变库仑电荷的符号、大小和位置来表征实验性高K器件中库仑电荷对载流子输运的影响。在完成的器件结构上，两个端子的测量将与三个端子的测量重叠。实验和理论研究涉及器件物理，化学，材料科学和纳米级建模。我们计划的更广泛的方面将促进纳米电子劳动力的多样性，并提供知识技术转让，研究和教育的整合，以及促进与经济工业部门的伙伴关系。我们已经制定了优秀的教育和推广计划，以增加在纳米电子学，特别是半导体器件的机会的多样性？一个保持美国在全球经济中领导地位的重要领域。我们的研究为少数民族学生的外展和与工业界的合作提供了一个很好的工具。我们研究的变革性在于一种新的方法，用简单的双端结构来模拟低场传输，这种结构可以在实验室里很容易地制造，而不需要大量的电子设备。这一概念适用于研究各种新兴纳米器件中的载流子输运，并将推动该技术的快速创新发展。