EAGER: Characterization and Modeling of Nanoscaled Semiconductor Devices

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EAGER: Characterization and Modeling of Nanoscaled Semiconductor DevicesMarvin H. WhiteLehigh UniversityAbstractWe propose a EAGER program to apply a new approach to study low-field carrier mobilityin high-K, nanoscaled, semiconductor MOSFET devices ? devices with Coulombscattering centers in the high-K dielectrics. This concept will permit the evaluation of lowfieldcarrier transport in nanoscaled devices with a two-terminal structure rather than thefabrication of a three-terminal device structure. We will use two hetero-insulator devicestructures: (1) a nonvolatile, ?charge-trap?, nanoscaled MANOS semiconductor memorydevice with programmable charge storage and (2) a metal gate, high-K, nanoscaledMOS transistor with fixed charge in the high-K dielectric.The intellectual merit involves the integration of research and education to explore lowfield,carrier transport in high-K nanoscaled devices with a simple two-terminalconductance and capacitance measurement, thereby, alleviating the need to fabricatethree-terminal devices complete with ohmic contacts. We will characterize the influenceof Coulomb charge in experimental high high-K devices on carrier transport by varyingthe sign, magnitude and position of the charge. Two terminal measurements will becompared with three-terminal measurements on completed device structures. Theexperimental and theoretical studies involve device physics, chemistry, materialsscience and modeling at the nanoscale.The broader aspects in our program will advance diversity in the nanoelectronicsworkforce and provide intellectual technology transfer, integration of research andeducation, and promotion of partnerships with the industrial sector of the economy. Wehave developed excellent educational and outreach programs to increase diversity withopportunities in nanoelectronics, especially semiconductor devices ? an important areato maintain US leadership in a global economy. Our research provides an excellentvehicle for minority student outreach and partnerships with industry.The transformative nature of our research lies in a new approach to model low fieldtransport with simple two-terminal structures, which can be easily fabricated in thelaboratory without extensive photolithographic equipment. The concept is applicable tothe study of carrier transport in a broad range of emerging nanoscaled devices and willaid rapid and innovative advances in the technology