Carrier Transport in Advanced Silicon Carbide (SiC) Devices

先进碳化硅 (SiC) 器件中的载流子传输

• 批准号: 0207093
• 负责人: Marvin White
• 金额: $ 24万
• 依托单位: Lehigh University
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 2002
• 资助国家: 美国
• 起止时间: 2002-07-15 至 2005-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0207093&HistoricalAwards=false
• 关键词: Carrier; Transport; Advanced; Silicon; Carbide

0207093WhiteThis research program addresses the study of carrier transport in advanced silicon carbide (SiC) devices. The research focuses on the modeling, fabrication and electrical characterization of advanced SiC devices, including n and p-channel MOSFETs, and novel surface and buried-channel DIMOS and IGBT devices with particular emphasis on their utilization for power switching applications. The research emphasizes the development of a low temperature fabrication sequence to reduce the detrimental effects of 'step bunching', while simultaneously achieving the required activation of the implanted species. A goal of the research is to increase carrier inversion and accumulation-layer mobility through a combination of low temperature processing with an optimized gate dielectric. The research focuses on the physical modeling of carrier mobility where electrons move in localized states at the SiC-SiO2 interface and are thermally activated into extended states in the conduction band. A combination of thermal activation, surface roughness and point Coulomb scattering all play a role in limiting the carrier mobility and hence the specific ON resistance of SiC power MOSFETs. The study of both electron and hole transport is important in planar SiC integrated circuit technology, particularly for 'smart' power applications. The research employs novel test structures, fabrication techniques and instrumentation to study the influence of surface and bulk traps on carrier transport in inversion and layers over an extended temperature range, while contributing to the advancement of SiC devices, particularly power semiconductor devices.

0207093白色本研究计划致力于先进碳化硅（SiC）器件中载流子输运的研究。研究重点是先进SiC器件的建模，制造和电气特性，包括n和p沟道MOSFET，以及新型表面和埋沟道DIMOS和IGBT器件，特别强调它们在功率开关应用中的应用。该研究强调了低温制造顺序的发展，以减少“步骤聚束”的不利影响，同时实现所需的注入物质的激活。研究的一个目标是通过低温处理与优化的栅极电介质的组合来增加载流子反转和积累层迁移率。研究的重点是载流子迁移率的物理建模，其中电子在SiC-SiO2界面的局域态移动，并被热激活到导带中的扩展态。热激活、表面粗糙度和点库仑散射的组合都在限制载流子迁移率方面发挥作用，从而限制SiC功率MOSFET的比导通电阻。电子和空穴输运的研究在平面SiC集成电路技术中是重要的，特别是对于“智能”功率应用。该研究采用新型的测试结构，制造技术和仪器来研究表面和体陷阱对载流子输运的影响，同时有助于SiC器件，特别是功率半导体器件的进步。