Charge Transport and Storage in Nanoscaled Nonvolatile Semiconductor Memory (NVSM) SONOS Devices

纳米级非易失性半导体存储器 (NVSM) SONOS 器件中的电荷传输和存储

• 批准号: 0429032
• 负责人: Marvin White
• 金额: --
• 依托单位: Lehigh University
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 2004
• 资助国家: 美国
• 起止时间: 2004-09-01 至 2007-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0429032&HistoricalAwards=false
• 关键词: Charge; Transport; Storage; Nanoscaled; Nonvolatile

We propose to study charge transport and storage in ultra-thin, oxide-nitride-oxide (ONO) heteroinsulator nanostructures, which find application in high density, low-power, low voltage, nonvolatile semiconductor memories (NVSMs). In particular, we will examine a new type of SONOS device called a NROMTM structure, which is programmed with hot electron injection and is able to store 2 bits of information spatially isolated over source and drain regions of the device. In addition, each of these bits has the possibility of multi-level storage opening the possibility for ultra-high density NVSMs. The study of device physics, the technology and potential applications of ultra-thin oxides are also relevant to the thrust into low-power CMOS circuits so our study will encompass experimental nanoscaled SONOS devices fabricated with fully-depleted silicon on insulator (FDSOI) CMOS technology. Characterization of traps at the semiconductor-insulator-gate interfaces and in the bulk insulator is an essential factor in predicting the performance and reliability of nanoscaled semiconductor devices, such as SONOS NVSMs. Our research program will investigate the fundamental limitations in nanoscaled SONOS NVSMs. The intellectual merit of this proposal resides in a vision where future advancements in nonvolatile semiconductor memory storage will play a central role in nanoscaled science and engineering. Our program integrates research and education to explore high-density NVSMs with unique heteroinsulator structures. The experimental and theoretical study of novel devices will entail the use of physics, chemistry, materials science and device electronics at the nanoscale with considerable opportunity to explore new frontiers through the generation of new knowledge. The broader aspects in our program will advance diversity in the nanoelectronics workforce and provide intellectual technology transfer, integration of research and education, and promotion of partnerships. We have excellent educational and outreach programs to increase diversity with opportunities in nanoelectronics, especially semiconductor devices . an important area to maintain US leadership in a global economy. This research program provides an excellent vehicle for student research and education, minority student outreach and partnerships with industry.

我们建议研究超薄氧化物-氮化物-氧化物（ONO）异质绝缘体纳米结构中的电荷传输和存储，该结构可应用于高密度、低功耗、低电压、非易失性半导体存储器（NVSM）。 特别是，我们将研究一种称为 NROMTM 结构的新型 SONOS 器件，该器件通过热电子注入进行编程，并且能够在器件的源极和漏极区域上存储空间隔离的 2 位信息。 此外，这些位中的每一位都具有多层存储的可能性，为超高密度 NVSM 提供了可能性。器件物理、超薄氧化物技术和潜在应用的研究也与低功耗 CMOS 电路的发展相关，因此我们的研究将包括采用全耗尽绝缘体上硅 (FDSOI) CMOS 技术制造的实验性纳米级 SONOS 器件。半导体-绝缘体-栅极界面和体绝缘体中陷阱的表征是预测纳米级半导体器件（例如 SONOS NVSM）性能和可靠性的重要因素。 我们的研究计划将调查纳米级 SONOS NVSM 的基本局限性。 该提案的智力价值在于这样一种愿景：非易失性半导体存储器的未来进步将在纳米级科学和工程中发挥核心作用。我们的项目将研究和教育结合起来，探索具有独特异质绝缘体结构的高密度 NVSM。 新型器件的实验和理论研究将需要在纳米尺度上使用物理、化学、材料科学和器件电子学，并有大量机会通过产生新知识来探索新领域。我们计划的更广泛方面将促进纳米电子学劳动力的多样性，并提供知识技术转让、研究和教育的整合以及促进伙伴关系。我们拥有出色的教育和推广计划，以增加纳米电子学（尤其是半导体器件）领域的机会多样性。 保持美国在全球经济中的领导地位的重要领域。该研究项目为学生研究和教育、少数族裔学生外展以及与行业的合作提供了一个极好的工具。