Advanced Nanoscaled Nonvolatile Semiconductor Memory (NVSM) Devices

先进的纳米级非易失性半导体存储器（NVSM）器件本研究的目的是进行超薄，氧化物-氮化物-氧化物（ONO）异质绝缘体纳米结构的电荷传输和存储的基础研究，用于高密度，低功耗，低电压，非易失性半导体存储器（NVSM）。该方法是制造、电表征和建模新的NVSM器件结构：（1）具有热电子注入和2位空间存储的NOR型架构中的NROM TM器件，以及（2）具有量子力学隧穿和多级电荷存储的NAND型架构中的MANOS器件。该结构使用高K氧化铝（A）电介质来形成ANO异质绝缘体纳米结构。这些nvsm将找到广泛的应用在超高密度，低功耗半导体存储器与替代硬盘存储在计算机和便携式电子产品？手机和掌上电脑这项研究对美国在全球半导体行业的领导地位和经济效益至关重要。我们计划的智力价值在于一个愿景，即未来硅基非易失性半导体存储器存储的进步将在纳米科学和工程中发挥核心作用。我们的计划整合了研究和教育，以探索具有独特异质绝缘体纳米结构的高密度NVSM。该研究将产生新的知识在先进的nanoscaled NVSM设备的电荷传输（写/擦除）和存储（保留）的研究。在我们的计划更广泛的方面将通过智能技术转让，研究和教育的整合和促进与经济的工业部门的伙伴关系，推进纳米电子劳动力的多样性。我们的教育和推广计划将通过大学奖学金和纳米电子行业的临时暑期职位来增加多样性，特别是半导体器件领域。该研究计划为学生的研究和教育，少数民族学生的推广和与行业的合作伙伴关系提供了一个很好的工具。

Advanced Nanoscaled Nonvolatile Semiconductor Memory (NVSM) DevicesThe objective of this research is to conduct fundamental research on charge transport and storage in ultra-thin, oxide-nitride-oxide (ONO) hetero-insulator nanostructures used in high density, low-power, low voltage, nonvolatile semiconductor memories (NVSMs). The approach is to fabricate, electrically characterize, and model new NVSM device structures: (1) an NROMTM device in an NOR-type architecture programmed (written) with hot electron injection and 2 bit spatial storage, and (2) a MANOS device in a NAND-type architecture programmed and erased with quantum mechanical tunneling and multiple level charge storage. This structure uses a high-K aluminum oxide (A) dielectric to form an ANO hetero-insulator nanostructure. These NVSMs will find wide applications in ultra high density, low power semiconductor memories with replacement of hard-drive storage in computers, and portable electronics ? cell phones and PDAs. This research is essential for U.S. leadership and economic benefits in the global semiconductor industry.The intellectual merit of our program rests in a vision where future advancements in silicon-based, nonvolatile semiconductor memory storage will play a central role in nanoscaled science and engineering. Our program integrates research and education to explore high-density NVSMs with unique hetero-insulator nanostructures. The research will generate new knowledge in the study of charge transport (write/erase) and storage (retention) in advanced nanoscaled NVSM devices.The broader aspects in our program will advance diversity in the nanoelectronics work-force through intellectual technology transfer, integration of research and education and promotion of partnerships with the industrial sector of the economy. Our educational and outreach programs will increase diversity through scholarships at the university and interim summer positions with industry in nanoelectronics, especially the area of semiconductor devices. This research program provides an excellent vehicle for student research and education, minority student outreach and partnerships with industry.