Advanced Nanoscaled Nonvolatile Semiconductor Memory (NVSM) Devices

先进纳米级非易失性半导体存储器 (NVSM) 器件

• 批准号: 1061936
• 负责人: Marvin White
• 金额: $ 4.5万
• 依托单位: Ohio State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-09-01 至 2011-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1061936&HistoricalAwards=false
• 关键词: Advanced; Nanoscaled; Nonvolatile; Semiconductor; Memory

Advanced Nanoscaled Nonvolatile Semiconductor Memory (NVSM) DevicesThe objective of this research is to conduct fundamental research on charge transport and storage in ultra-thin, oxide-nitride-oxide (ONO) hetero-insulator nanostructures used in high density, low-power, low voltage, nonvolatile semiconductor memories (NVSMs). The approach is to fabricate, electrically characterize, and model new NVSM device structures: (1) an NROMTM device in an NOR-type architecture programmed (written) with hot electron injection and 2 bit spatial storage, and (2) a MANOS device in a NAND-type architecture programmed and erased with quantum mechanical tunneling and multiple level charge storage. This structure uses a high-K aluminum oxide (A) dielectric to form an ANO hetero-insulator nanostructure. These NVSMs will find wide applications in ultra high density, low power semiconductor memories with replacement of hard-drive storage in computers, and portable electronics ? cell phones and PDAs. This research is essential for U.S. leadership and economic benefits in the global semiconductor industry.The intellectual merit of our program rests in a vision where future advancements in silicon-based, nonvolatile semiconductor memory storage will play a central role in nanoscaled science and engineering. Our program integrates research and education to explore high-density NVSMs with unique hetero-insulator nanostructures. The research will generate new knowledge in the study of charge transport (write/erase) and storage (retention) in advanced nanoscaled NVSM devices.The broader aspects in our program will advance diversity in the nanoelectronics work-force through intellectual technology transfer, integration of research and education and promotion of partnerships with the industrial sector of the economy. Our educational and outreach programs will increase diversity through scholarships at the university and interim summer positions with industry in nanoelectronics, especially the area of semiconductor devices. This research program provides an excellent vehicle for student research and education, minority student outreach and partnerships with industry.

先进的纳米级非易失性半导体存储器(NVSM)本研究的目标是对用于高密度、低功率、低电压、非易失性半导体存储器(NVSM)的超薄、氧化物-氮化物(ONO)异质绝缘纳米结构中的电荷传输和存储进行基础研究。该方法是制造、电学表征和建模新的NVSM器件结构：(1)NOR类型结构中的NROMTM器件，利用热电子注入和2比特空间存储进行编程(写入)；以及(2)NAND类型结构中的MANOS器件，利用量子力学隧道和多级电荷存储进行编程和擦除。该结构使用高K氧化铝(A)介电材料形成ANO异质绝缘体纳米结构。这些NVSM将广泛应用于超高密度、低功耗的半导体存储器，以取代计算机中的硬盘存储，以及便携式电子产品？手机和掌上电脑。这项研究对美国在全球半导体行业的领导地位和经济利益至关重要。我们计划的智力优势在于这样一个愿景，即基于硅的非易失性半导体存储设备的未来进步将在纳米级科学和工程中发挥核心作用。我们的计划将研究和教育结合起来，探索具有独特异质绝缘纳米结构的高密度NVSM。这项研究将在研究先进的纳米级NVSM设备中的电荷传输(写入/擦除)和存储(保留)方面产生新的知识。我们计划中更广泛的方面将通过智力技术转让、研究和教育的整合以及促进与工业部门的经济伙伴关系来促进纳米电子劳动力的多样性。我们的教育和推广计划将通过在大学提供奖学金和在纳米电子行业提供临时暑期职位来增加多样性，特别是在半导体设备领域。这一研究计划为学生研究和教育、少数族裔学生的推广以及与产业界的合作提供了一个极好的工具。