Nanoscaled Nonvolatile Semiconductor Memory (NVSM) SONOS Devices

纳米级非易失性半导体存储器 (NVSM) SONOS 器件

• 批准号: 0114809
• 负责人: Marvin White
• 金额: $ 30万
• 依托单位: Lehigh University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-09-01 至 2004-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0114809&HistoricalAwards=false
• 关键词: Nanoscaled; Nonvolatile; Semiconductor; Memory; NVSM

This research and educational program will address the quantum-mechanical transport andstorage of electrons and holes in ultra-thin, heteroinsulator nanostructures.The nanostructures arecomprised of an oxide-nitride-oxide (ONO)gate dielectric. This research focuses on the quantum-mechanical aspects of charge trapping in ultra-thin ONO dielectrics. This project will employ a combination of novel test structures,such as linear voltage ramp and charge pumping,o determine the spatial and energetic distribution of traps in the silicon nitride and oxynitride storage layers and in the Si-SiO 2 interfacial region on the opposite side of the tunnel oxide. A variation of material parameters to examine retention and endurance of scaled novel SONOS devices in the program (write) and erase modes as a function of operational temperature. This research addresses the incorporation of hydrogen and deuterium in the SONOS device to provide long-term retention under extensiveerase/write cycling at elevated temperatures; it will also address the effect of the gate electrode on the charge distribution and long-term memory retention. Advanced fabrication techniques are used to grow ultra-thin tunnel oxides and analytical characterization techniques, such as AFM,TEM and angle-resolved XPS are employed to analyze the spatial and compositional structure of these ultra-thin dielectrics. This research seeks to understand charge trapping and storage in ultra-thin multi-dielectrics in advanced semiconductor devices while offering a strong educational program and link to industrial partnerships.

这个研究和教育计划将解决电子和空穴在超薄异质绝缘体纳米结构中的量子力学传输和存储问题。纳米结构由氧化物-氮化物-氧化物（ONO）栅极电介质组成。 本研究着重于超薄ONO薄膜中电荷捕获的量子力学方面。 该项目将采用一种新颖的测试结构，如线性电压斜坡和电荷泵的组合，以确定在氮化硅和氮氧化物存储层中的陷阱的空间和能量分布，并在隧道氧化物的对面的Si-SiO2界面区域。 材料参数的变化，以检查在编程（写）和擦除模式下，作为操作温度的函数的缩放的新型SONOS器件的保持力和耐久性。 这项研究解决了氢和氘在SONOS器件中的掺入，以提供在高温下的extensiveerase/write循环下的长期保持;它还将解决栅极电极对电荷分布和长期存储器保持的影响。 先进的制造技术被用来生长超薄隧道氧化物和分析表征技术，如AFM，TEM和角分辨XPS被用来分析这些超薄隧道氧化物的空间和成分结构。 这项研究旨在了解先进半导体器件中超薄多晶层的电荷捕获和存储，同时提供强大的教育计划和与工业合作伙伴的联系。