CAREER: Dielectric Engineering of Quantum Wire Solids: Fundamentals to Applications
职业:量子线固体的介电工程:应用基础
基本信息
- 批准号:0645698
- 负责人:
- 金额:$ 58万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2007
- 资助国家:美国
- 起止时间:2007-04-01 至 2012-09-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Technical: This project addresses fundamental properties of quantum-wires with emphasis on control of electronic and optical properties by the dielectric environment. Dielectric modification is anticipated as an addition to bandgap and effective mass control commonly applied to epitaxial semiconductor heterostructures. The research plan includes: 1. theory for the effect of dielectric environments on transport properties of quantum-wires, 2. materials/configuration design and test to achieve desired properties of quantum-wires. The research addressed is expected to lead to development of unconventional methods to control and use quantum-wires in electronic and optical devices forming the basis for a wide range of applications such as transistors, light-emitting diodes, photodetectors, and photovoltaics. The effect of the dielectric environment on the properties of quantum wires may also seed ideas for sensor technologies. Non-technical: The project addresses basic research issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to new understanding and capabilities for potential next generation electronic/photonic devices. The project provides unique opportunities for graduate and undergraduate training in an interdisciplinary field. The project also includes an outreach program comprising on-site experimental demonstration of nanoscale scanning probe techniques for local high-school students with collaboration of a high-school teacher.
技术支持:本计画探讨量子线的基本性质,并强调介电环境对电子与光学性质的控制。介电改性被预期为通常应用于外延半导体异质结构的带隙和有效质量控制的补充。研究计划包括:1.介电环境对量子线输运性质影响的理论,2.材料/配置设计和测试,以实现量子线的期望特性。所解决的研究预计将导致非常规方法的发展,以控制和使用量子线的电子和光学器件形成的基础上,广泛的应用,如晶体管,发光二极管,光电探测器,和photopolics。介电环境对量子线特性的影响也可能为传感器技术提供灵感。非技术性:该项目涉及具有高度技术相关性的材料科学专题领域的基础研究问题。该研究将在基础层面上为潜在的下一代电子/光子器件的新理解和能力贡献基础材料科学知识。该项目为跨学科领域的研究生和本科生培训提供了独特的机会。该项目还包括一个推广方案,包括与一名高中教师合作,为当地高中学生现场实验演示纳米级扫描探针技术。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Debdeep Jena其他文献
Two-dimensional semiconductors for transistors
用于晶体管的二维半导体
- DOI:
10.1038/natrevmats.2016.52 - 发表时间:
2016-08-17 - 期刊:
- 影响因子:86.200
- 作者:
Manish Chhowalla;Debdeep Jena;Hua Zhang - 通讯作者:
Hua Zhang
Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs
- DOI:
10.1007/s11664-013-2841-3 - 发表时间:
2013-11-23 - 期刊:
- 影响因子:2.500
- 作者:
Jorge A. Ferrer-Pérez;Bruce Claflin;Debdeep Jena;Mihir Sen;Ramakrishna Vetury;Donald Dorsey - 通讯作者:
Donald Dorsey
Evidence of many-body, fermi-energy edge singularity in InN films grown on GaN buffer layers
GaN 缓冲层上生长的 InN 薄膜中多体费米能边缘奇点的证据
- DOI:
- 发表时间:
2007 - 期刊:
- 影响因子:0
- 作者:
Xiaodong Mu;Yujie J. Ding;Kejia Wang;Debdeep Jena;J. Khurgin - 通讯作者:
J. Khurgin
Growth windows of epitaxial NbN x films on c -plane sapphire and their structural and superconducting properties
c面蓝宝石外延NbN x 薄膜的生长窗口及其结构和超导性能
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
J. Wright;Huili Grace;Debdeep Jena - 通讯作者:
Debdeep Jena
スパッタアニールAlN上GaN/AlN 2次元正孔ガス構造の電気特性評価と微細構造解析
溅射退火AlN上GaN/AlN二维空穴气体结构的电性能评估和微观结构分析
- DOI:
- 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
西村 海音;中西 悠太;林 侑介;藤平 哲也;Chaudhuri Reet;Cho Yongjin;Xing Huili (Grace);Debdeep Jena;上杉 謙次郎;三宅 秀人;酒井 朗 - 通讯作者:
酒井 朗
Debdeep Jena的其他文献
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{{ truncateString('Debdeep Jena', 18)}}的其他基金
I-Corps: Aluminum Nitride-based Power Transistors
I-Corps:氮化铝基功率晶体管
- 批准号:
1933825 - 财政年份:2019
- 资助金额:
$ 58万 - 项目类别:
Standard Grant
RAISE-TAQS: Integrated Room Temperature Single-Photon based Quantum-Secure LiFi Systems
RAISE-TAQS:集成室温单光子量子安全 LiFi 系统
- 批准号:
1839196 - 财政年份:2018
- 资助金额:
$ 58万 - 项目类别:
Standard Grant
Polarization-Driven Electron-Hole Bilayers in Quantum Wells
量子阱中偏振驱动的电子空穴双层
- 批准号:
1710298 - 财政年份:2017
- 资助金额:
$ 58万 - 项目类别:
Continuing Grant
EFRI NewLAW: Non-Reciprocal Wave Propagation Devices by Fermionic Emulation and Exceptional Point Physics
EFRI NewLAW:通过费米子仿真和异常点物理实现非互易波传播装置
- 批准号:
1741694 - 财政年份:2017
- 资助金额:
$ 58万 - 项目类别:
Continuing Grant
DMREF: Collaborative Research: Extreme Bandgap Semiconductors
DMREF:协作研究:极限带隙半导体
- 批准号:
1534303 - 财政年份:2015
- 资助金额:
$ 58万 - 项目类别:
Standard Grant
2D Crystal Semiconductors: Electron Transport and Device Applications
2D 晶体半导体:电子传输和器件应用
- 批准号:
1523356 - 财政年份:2015
- 资助金额:
$ 58万 - 项目类别:
Standard Grant
2D Crystal Semiconductors: Electron Transport and Device Applications
2D 晶体半导体:电子传输和器件应用
- 批准号:
1232191 - 财政年份:2012
- 资助金额:
$ 58万 - 项目类别:
Standard Grant
Nanoscale Optoelectronics with Polarization and Bandgap Engineered Nitride Nanowire/Silicon Heterostructures
具有偏振和带隙工程氮化物纳米线/硅异质结构的纳米级光电器件
- 批准号:
0907583 - 财政年份:2009
- 资助金额:
$ 58万 - 项目类别:
Standard Grant
Evaluation of Graphene Nanoribbons for Lateral Bandgap Engineered Devices
用于横向带隙工程器件的石墨烯纳米带的评估
- 批准号:
0802125 - 财政年份:2008
- 资助金额:
$ 58万 - 项目类别:
Standard Grant
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