DMREF: Collaborative Research: Extreme Bandgap Semiconductors
DMREF:协作研究:极限带隙半导体
基本信息
- 批准号:1534303
- 负责人:
- 金额:$ 84万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2015
- 资助国家:美国
- 起止时间:2015-10-01 至 2019-09-30
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
DMREF: Collaborative Research: Extreme Bandgap SemiconductorsNon-technical Description: The last two decades witnessed revolutionary advances in electronics and photonics by moving from ~1 electron Volt gap semiconductors (Silicon, Gallium Arsenide) to ~3 electron Volt Gallium Nitride and Silicon Carbide. This enabled energy-efficient light emitting diodes as replacement of incandescent bulbs, high-voltage transistors that are cutting down wasted energy in electrical devices and machinery, and significantly expanded our fundamental knowledge of the materials science of semiconductors. Similar major advances are expected by aiming at extreme-bandgap semiconductors with energy gaps almost twice of that of the wide-bandgap semiconductors. In addition to the new science, such materials should enable advances in healthcare and monitoring by creating deep-ultraviolet light-emitting diodes and lasers, and by significantly improving the efficiency and capability of semiconductors for electrical power conversion. Technical Description: Investigation of extreme-bandgap semiconductor materials with gaps of ~5-6 electron Volts has the potential to seed vast application arenas, and simultaneously advance the fundamental materials science and the physics of materials. The goal of this proposal is to develop the materials science of extreme bandgap semiconductors: Boron Nitride, Aluminum Nitride, their alloys and their heterostructures, and to investigate their properties for future applications in power electronics, deep-ultraviolet emitters, and more. Guided by rigorous mathematical and first-principles theory and modeling, the 4-investigator team will explore fundamental questions regarding epitaxial growth, polarization-induced conductivity control, band anti-crossing in highly mismatched materials, effects of isotope engineering on electronic and thermal transport. The proposed research project has the potential to be transformative in the field of materials science and condensed matter physics under the umbrella of the Materials Genome Initiative because the research thrusts will develop: first-principles predictive theory of electronic, optical, and thermal properties of these materials, epitaxy of these new semiconductors, isotope alloys and heterostructures, novel methods for controlling conductivity, understanding and control of the interplay of competing 3-dimensional vs 2-dimensional crystal phases, understanding of ultra high-field optical, electronic, thermal phenomena, of cation band-anticrossing physics, novel paradigms of isotope (neutron) engineering of optoelectronic, solid-state qubit, Cooper pairs, and thermoelectric properties. The proposed project will result in the training of graduate students in a fascinating emerging field of extreme bandgap semiconductor material science, with their many fundamental electronic, optical, and thermoelectric properties. In addition to expanding existing outreach programs, new activities with a special focus on high-school students and underrepresented groups via Research Experiences for Teachers programs and direct visits for in-class demonstrations are proposed. That the team is distributed between Cornell, Michigan, and Stanford with complementary expertise will be exploited by regular exchange of graduate students for experiments, as well as theory and modeling work, to foster a truly collaborative mindset in the project. The dissemination of research by journal publications, presentations at conferences, its inclusion in courses taught by the invsetigators, and online (e.g. nanoHub) will make possible the outreach of the research results to the widest possible audience.
DMREF:合作研究:极端带隙半导体非技术描述:过去二十年见证了电子和光子学的革命性进步,从~1电子伏隙半导体(硅,砷化镓)到~3电子伏氮化镓和碳化硅。这使得节能发光二极管取代了白炽灯和高压晶体管,减少了电气设备和机械中浪费的能源,并大大扩展了我们对半导体材料科学的基础知识。类似的重大进展有望瞄准极端带隙半导体,其能隙几乎是宽带隙半导体的两倍。除了新科学之外,这种材料还可以通过制造深紫外发光二极管和激光器,以及通过显著提高半导体的效率和电力转换能力,在医疗保健和监测领域取得进步。技术描述:研究~5-6电子伏特的极端带隙半导体材料具有广阔的应用领域的潜力,同时也促进了基础材料科学和材料物理学的发展。本提案的目标是发展极端带隙半导体的材料科学:氮化硼、氮化铝、它们的合金和异质结构,并研究它们的特性,以用于未来在电力电子、深紫外发射器等方面的应用。在严格的数学和第一性原理理论和模型的指导下,4名研究人员将探索有关外延生长、极化诱导电导率控制、高度不匹配材料中的能带抗交叉、同位素工程对电子和热输运的影响等基本问题。在材料基因组计划的保护下,拟议的研究项目有可能在材料科学和凝聚态物理领域产生变革,因为研究重点将发展:这些材料的电子、光学和热性质的第一性原理预测理论,这些新的半导体、同位素合金和异质结构的外延,控制电导率的新方法,理解和控制竞争的三维和二维晶体相的相互作用,理解超高场光学、电子、热现象,阳离子带抗交叉物理,光电同位素(中子)工程的新范例,固态量子比特,库珀对和热电性质。该项目将培养具有许多基本电子、光学和热电性质的极带隙半导体材料科学这一令人着迷的新兴领域的研究生。除了扩大现有的外展计划外,还建议通过教师研究经验计划和直接访问课堂演示来特别关注高中生和代表性不足的群体。该团队分布在康奈尔大学、密歇根大学和斯坦福大学之间,具有互补的专业知识,将通过定期交换研究生进行实验、理论和建模工作来利用,从而在项目中培养真正的协作心态。通过期刊出版物、在会议上发表报告、将研究成果纳入研究者讲授的课程以及在线(例如nanoHub)传播研究成果,将使研究成果向尽可能广泛的受众推广成为可能。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
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Debdeep Jena其他文献
Two-dimensional semiconductors for transistors
用于晶体管的二维半导体
- DOI:
10.1038/natrevmats.2016.52 - 发表时间:
2016-08-17 - 期刊:
- 影响因子:86.200
- 作者:
Manish Chhowalla;Debdeep Jena;Hua Zhang - 通讯作者:
Hua Zhang
Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs
- DOI:
10.1007/s11664-013-2841-3 - 发表时间:
2013-11-23 - 期刊:
- 影响因子:2.500
- 作者:
Jorge A. Ferrer-Pérez;Bruce Claflin;Debdeep Jena;Mihir Sen;Ramakrishna Vetury;Donald Dorsey - 通讯作者:
Donald Dorsey
Evidence of many-body, fermi-energy edge singularity in InN films grown on GaN buffer layers
GaN 缓冲层上生长的 InN 薄膜中多体费米能边缘奇点的证据
- DOI:
- 发表时间:
2007 - 期刊:
- 影响因子:0
- 作者:
Xiaodong Mu;Yujie J. Ding;Kejia Wang;Debdeep Jena;J. Khurgin - 通讯作者:
J. Khurgin
Growth windows of epitaxial NbN x films on c -plane sapphire and their structural and superconducting properties
c面蓝宝石外延NbN x 薄膜的生长窗口及其结构和超导性能
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
J. Wright;Huili Grace;Debdeep Jena - 通讯作者:
Debdeep Jena
スパッタアニールAlN上GaN/AlN 2次元正孔ガス構造の電気特性評価と微細構造解析
溅射退火AlN上GaN/AlN二维空穴气体结构的电性能评估和微观结构分析
- DOI:
- 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
西村 海音;中西 悠太;林 侑介;藤平 哲也;Chaudhuri Reet;Cho Yongjin;Xing Huili (Grace);Debdeep Jena;上杉 謙次郎;三宅 秀人;酒井 朗 - 通讯作者:
酒井 朗
Debdeep Jena的其他文献
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{{ truncateString('Debdeep Jena', 18)}}的其他基金
I-Corps: Aluminum Nitride-based Power Transistors
I-Corps:氮化铝基功率晶体管
- 批准号:
1933825 - 财政年份:2019
- 资助金额:
$ 84万 - 项目类别:
Standard Grant
RAISE-TAQS: Integrated Room Temperature Single-Photon based Quantum-Secure LiFi Systems
RAISE-TAQS:集成室温单光子量子安全 LiFi 系统
- 批准号:
1839196 - 财政年份:2018
- 资助金额:
$ 84万 - 项目类别:
Standard Grant
Polarization-Driven Electron-Hole Bilayers in Quantum Wells
量子阱中偏振驱动的电子空穴双层
- 批准号:
1710298 - 财政年份:2017
- 资助金额:
$ 84万 - 项目类别:
Continuing Grant
EFRI NewLAW: Non-Reciprocal Wave Propagation Devices by Fermionic Emulation and Exceptional Point Physics
EFRI NewLAW:通过费米子仿真和异常点物理实现非互易波传播装置
- 批准号:
1741694 - 财政年份:2017
- 资助金额:
$ 84万 - 项目类别:
Continuing Grant
2D Crystal Semiconductors: Electron Transport and Device Applications
2D 晶体半导体:电子传输和器件应用
- 批准号:
1523356 - 财政年份:2015
- 资助金额:
$ 84万 - 项目类别:
Standard Grant
2D Crystal Semiconductors: Electron Transport and Device Applications
2D 晶体半导体:电子传输和器件应用
- 批准号:
1232191 - 财政年份:2012
- 资助金额:
$ 84万 - 项目类别:
Standard Grant
Nanoscale Optoelectronics with Polarization and Bandgap Engineered Nitride Nanowire/Silicon Heterostructures
具有偏振和带隙工程氮化物纳米线/硅异质结构的纳米级光电器件
- 批准号:
0907583 - 财政年份:2009
- 资助金额:
$ 84万 - 项目类别:
Standard Grant
Evaluation of Graphene Nanoribbons for Lateral Bandgap Engineered Devices
用于横向带隙工程器件的石墨烯纳米带的评估
- 批准号:
0802125 - 财政年份:2008
- 资助金额:
$ 84万 - 项目类别:
Standard Grant
CAREER: Dielectric Engineering of Quantum Wire Solids: Fundamentals to Applications
职业:量子线固体的介电工程:应用基础
- 批准号:
0645698 - 财政年份:2007
- 资助金额:
$ 84万 - 项目类别:
Continuing Grant
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