Polarization-Driven Electron-Hole Bilayers in Quantum Wells

量子阱中偏振驱动的电子空穴双层

• 批准号: 1710298
• 负责人: Debdeep Jena
• 金额: $ 40万
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-07-01 至 2021-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1710298&HistoricalAwards=false
• 关键词: Polarization; Driven; Electron; Hole; Bilayers

Non-technical description: This project aims to discover new electronic and optical phenomena hidden in a material system that is currently used in solid state lighting, in communication systems, and power electronics, and is in almost all iPhones and iPads. The research focuses on electrical charge carriers of opposite signs located very close to each other in gallium nitride quantum structures. The carriers of opposite signs maintain separate identities, until they receive a command (for example through a small voltage or a current), upon which they mix strongly to either emit light, or flow as currents with very little energy dissipation. This sort of phenomena has been long desired for making low-power or ultrafast and energy-efficient electronic switches, for photonic devices, and potentially for sensor environments. Thus, findings of this project have a potential to impact the electronics and photonics industries, and environmental health and safety systems. The project trains graduate students in a fascinating emerging field at the intersection of physics, materials science, and electrical engineering. In addition to expanding existing outreach programs, new activities are considered with a special focus on the high-school students and underrepresented groups, including direct school visits and in-class demonstrations. The dissemination of research results in journal publications, presentations at conferences and inclusion in courses taught by the PI made available online ensures the outreach to the widest possible audience.Technical description: This project explores the quantum transport and optical properties of III-nitride quantum structures and their potential applications in electron-hole bilayer systems, driven by large polarization fields. Such bilayers are difficult to create in other material systems either because of the lack of polarization, doping limitations, or because of low breakdown fields. When created (for example, in two-dimensional layered materials), additional challenges occur related to their chemical doping and contact reliability. In this project, the PI takes advantage of unique recent technological progress in epitaxially regrown contacts to two-dimensional electron and hole gases in novel compressively strained GaN quantum wells on AlN substrates to explore bilayer physics in a fundamentally new platform. Parallel two-dimensional systems of electrons and holes boast rich physics at several levels of complexity - from uncoupled two-dimensional electron-gas / two-dimensional hole gas p-n diodes that could lead to new electronic and photonic devices, to weakly coupled systems, exhibiting Coulomb drag, to strongly coupled systems that have shown glimpses of excitonic or Bose-Einstein condensation. And with the tantalizing possibility of polarization-driven topological edge states, the outcomes of the project has a potential for significant scientific and technological advances for ultra-low power electronic, photonic quantum information-processing applications.

非技术性说明：该项目旨在发现隐藏在材料系统中的新的电子和光学现象，该材料系统目前用于固态照明，通信系统和电力电子，并且几乎所有的iPhone和iPad都有。这项研究的重点是在氮化镓量子结构中彼此非常接近的相反符号的电荷载流子。相反符号的载流子保持独立的身份，直到它们收到命令（例如通过小电压或电流），它们强烈混合以发光或以非常小的能量耗散作为电流流动。这种现象长期以来一直被期望用于制造低功率或超快和节能的电子开关，用于光子器件，并可能用于传感器环境。因此，该项目的研究结果有可能影响电子和光子工业以及环境健康和安全系统。该项目培养研究生在一个迷人的新兴领域在物理学，材料科学和电气工程的交叉。除了扩大现有的外联方案外，还考虑开展新的活动，特别关注高中生和代表性不足的群体，包括直接访问学校和课堂演示。研究成果在期刊出版物上的传播，在会议上的演讲以及PI在线授课的课程中的列入确保了最广泛的受众。技术描述：该项目探讨了III族氮化物量子结构的量子输运和光学性质及其在电子空穴双层系统中的潜在应用，由大偏振场驱动。这样的双层很难在其他材料系统中产生，因为缺乏极化，掺杂限制，或因为低击穿场。当创建（例如，在二维分层材料中）时，会出现与其化学掺杂和接触可靠性相关的额外挑战。在这个项目中，PI利用独特的最新技术进步，在AlN衬底上的新型压缩应变GaN量子威尔斯中外延再生长接触二维电子和空穴气体，以探索双层物理在一个全新的平台。电子和空穴的平行二维系统在几个复杂程度上拥有丰富的物理学-从可能导致新的电子和光子器件的非耦合二维电子气/二维空穴气p-n二极管，到表现出库仑阻力的弱耦合系统，再到表现出激子或玻色-爱因斯坦凝聚的强耦合系统。由于偏振驱动拓扑边缘态的诱人可能性，该项目的成果有可能为超低功率电子，光子量子信息处理应用带来重大的科学和技术进步。

项目成果

Hole mobility of strained GaN from first principles

• DOI: 10.1103/physrevb.100.085204
• 发表时间: 2019-08
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: S. Ponc'e;D. Jena;F. Giustino

Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design

采用埋入式隧道结设计通过 MBE 获得单片 p-down 氮化物激光二极管和 LED

• DOI: 10.1117/12.2548996
• 发表时间: 2020
• 期刊: Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design
• 作者: Turski, Henryk;Bharadwaj, Shyam;Siekacz, Marcin;Muziol, Grzegorz;Chlipala, Mikolaj;Zak, Mikolaj;Hajdel, Mateusz;Nowakowski-Szkudlarek, Krzesimir;Stanczyk, Szymon;Xing, Huili
• 通讯作者: Xing, Huili

Polarization control in nitride quantum well light emitters enabled by bottom tunnel-junctions

• DOI: 10.1063/1.5088041
• 发表时间: 2018-10
• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: H. Turski;S. Bharadwaj;H. Xing;D. Jena

GaN/AlN Schottky-gate p-channel HFETs with InGaN contacts and 100 mA/mm on-current

具有 InGaN 触点和 100 mA/mm 导通电流的 GaN/AlN 肖特基栅极 p 沟道 HFET

• DOI: 10.1109/iedm19573.2019.8993532
• 发表时间: 2019
• 期刊: IEDM Proceedings 2019
• 作者: Bader, S. J.;Chaudhuri, R.;Hickman, A.;Nomoto, K.;Bharadwaj, S.;Then, H. W.;Xing, H. G.;Jena, D.
• 通讯作者: Jena, D.

GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy

• DOI: 10.1364/ol.45.000121
• 发表时间: 2019
• 期刊: Optics Letters
• 影响因子: 3.6
• 作者: T. Wei;S. Islam;U. Jahn;Jianchang Yan;Kevin Lee;S. Bharadwaj;X. Ji;Junxi Wang;Jinmin Li;V. Protasenko;H. Xing;D. Jena