I-Corps: Aluminum Nitride-based Power Transistors

I-Corps:氮化铝基功率晶体管

基本信息

  • 批准号:
    1933825
  • 负责人:
  • 金额:
    $ 5万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2019
  • 资助国家:
    美国
  • 起止时间:
    2019-06-15 至 2019-11-30
  • 项目状态:
    已结题

项目摘要

The broader impact/commercial potential of this I-Corps project is to expand the limits of high-frequency, high-power signal amplification. This will be necessary for future wireless communications systems, including sixth generation (6G) wireless technology. 6G will require higher operation frequencies to enable much faster data transmission. As frequency increases, signal strength diminishes over much shorter distances. To offset this issue, signals must also be transmitted at higher powers to be able to carry the signal the necessary distance. The demand for this combination of high-power, high-frequency is expected to continue to grow, and the devices developed here are designed to achieve such performance. High-power, high-frequency data transmission is also an issue for self-driving cars. High-frequency signals enable detailed, real time mapping of a car's surroundings. High-power ensures the signal can travel through rain and fog, and return to the car before weakening beyond detection. The devices developed here can enable more detailed mapping at a longer range to make self-driving cars smarter and safer.This i-Corps project develops aluminum nitride (AlN) as a new platform for gallium nitride (GaN) transistors. The material advantages of an aluminum nitride platform over the traditional GaN platform are two-fold. AlN is much more electrically resistive than GaN, which prevents undesired leakage currents that hurt device performance. At the same time, the thermal conductivity of AlN is approximately 50% larger than that of GaN. The result is more efficient heat dissipation, enabling device operation at higher power. The research behind AlN-based power transistors is focused on crystal growth and device fabrication. Optimized crystal growth enables high quality AlN and GaN, improving device performance. The as-grown crystal is then processed into transistors, which requires state-of-the-art fabrication tools and refined processes. The AlN transistors have demonstrated high breakdown voltages when compared to state-of-the-art GaN-based transistors, a key measure for power performance.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
这个I-Corps项目更广泛的影响/商业潜力是扩大高频、高功率信号放大的限制。这对于包括第六代(6 G)无线技术在内的未来无线通信系统将是必要的。6 G将需要更高的工作频率,以实现更快的数据传输。随着频率的增加,信号强度在更短的距离上减弱。为了解决这个问题,信号还必须以更高的功率传输,以便能够将信号传输到必要的距离。对这种高功率、高频率组合的需求预计将继续增长,这里开发的器件就是为了实现这种性能而设计的。高功率、高频率的数据传输也是自动驾驶汽车面临的一个问题。高频信号使汽车周围环境的详细,真实的时间映射。高功率确保信号可以穿过雨雾,并在减弱到无法检测之前返回汽车。这里开发的器件可以在更远的距离上实现更详细的映射,使自动驾驶汽车更智能、更安全。i-Corps项目开发氮化铝(AlN)作为氮化镓(GaN)晶体管的新平台。氮化铝平台相对于传统GaN平台的材料优势是双重的。AlN的电阻比GaN大得多,这防止了损害器件性能的不期望的漏电流。同时,AlN的热导率比GaN的热导率大约50%。其结果是更有效的散热,使器件能够以更高的功率运行。AlN基功率晶体管的研究主要集中在晶体生长和器件制造上。优化的晶体生长可实现高质量的AlN和GaN,从而提高器件性能。然后将生长的晶体加工成晶体管,这需要最先进的制造工具和精细的工艺。与最先进的GaN基晶体管相比,AlN晶体管具有较高的击穿电压,这是衡量功率性能的一个关键指标。该奖项反映了NSF的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

数据更新时间:{{ journalArticles.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ monograph.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ sciAawards.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ conferencePapers.updateTime }}

{{ item.title }}
  • 作者:
    {{ item.author }}

数据更新时间:{{ patent.updateTime }}

Debdeep Jena其他文献

Two-dimensional semiconductors for transistors
用于晶体管的二维半导体
  • DOI:
    10.1038/natrevmats.2016.52
  • 发表时间:
    2016-08-17
  • 期刊:
  • 影响因子:
    86.200
  • 作者:
    Manish Chhowalla;Debdeep Jena;Hua Zhang
  • 通讯作者:
    Hua Zhang
Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs
  • DOI:
    10.1007/s11664-013-2841-3
  • 发表时间:
    2013-11-23
  • 期刊:
  • 影响因子:
    2.500
  • 作者:
    Jorge A. Ferrer-Pérez;Bruce Claflin;Debdeep Jena;Mihir Sen;Ramakrishna Vetury;Donald Dorsey
  • 通讯作者:
    Donald Dorsey
Evidence of many-body, fermi-energy edge singularity in InN films grown on GaN buffer layers
GaN 缓冲层上生长的 InN 薄膜中多体费米能边缘奇点的证据
Growth windows of epitaxial NbN x films on c -plane sapphire and their structural and superconducting properties
c面蓝宝石外延NbN x 薄膜的生长窗口及其结构和超导性能
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
    J. Wright;Huili Grace;Debdeep Jena
  • 通讯作者:
    Debdeep Jena
スパッタアニールAlN上GaN/AlN 2次元正孔ガス構造の電気特性評価と微細構造解析
溅射退火AlN上GaN/AlN二维空穴气体结构的电性能评估和微观结构分析
  • DOI:
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    西村 海音;中西 悠太;林 侑介;藤平 哲也;Chaudhuri Reet;Cho Yongjin;Xing Huili (Grace);Debdeep Jena;上杉 謙次郎;三宅 秀人;酒井 朗
  • 通讯作者:
    酒井 朗

Debdeep Jena的其他文献

{{ item.title }}
{{ item.translation_title }}
  • DOI:
    {{ item.doi }}
  • 发表时间:
    {{ item.publish_year }}
  • 期刊:
  • 影响因子:
    {{ item.factor }}
  • 作者:
    {{ item.authors }}
  • 通讯作者:
    {{ item.author }}

{{ truncateString('Debdeep Jena', 18)}}的其他基金

RAISE-TAQS: Integrated Room Temperature Single-Photon based Quantum-Secure LiFi Systems
RAISE-TAQS:集成室温单光子量子安全 LiFi 系统
  • 批准号:
    1839196
  • 财政年份:
    2018
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
Polarization-Driven Electron-Hole Bilayers in Quantum Wells
量子阱中偏振驱动的电子空穴双层
  • 批准号:
    1710298
  • 财政年份:
    2017
  • 资助金额:
    $ 5万
  • 项目类别:
    Continuing Grant
EFRI NewLAW: Non-Reciprocal Wave Propagation Devices by Fermionic Emulation and Exceptional Point Physics
EFRI NewLAW:通过费米子仿真和异常点物理实现非互易波传播装置
  • 批准号:
    1741694
  • 财政年份:
    2017
  • 资助金额:
    $ 5万
  • 项目类别:
    Continuing Grant
DMREF: Collaborative Research: Extreme Bandgap Semiconductors
DMREF:协作研究:极限带隙半导体
  • 批准号:
    1534303
  • 财政年份:
    2015
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
2D Crystal Semiconductors: Electron Transport and Device Applications
2D 晶体半导体:电子传输和器件应用
  • 批准号:
    1523356
  • 财政年份:
    2015
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
2D Crystal Semiconductors: Electron Transport and Device Applications
2D 晶体半导体:电子传输和器件应用
  • 批准号:
    1232191
  • 财政年份:
    2012
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
Nanoscale Optoelectronics with Polarization and Bandgap Engineered Nitride Nanowire/Silicon Heterostructures
具有偏振和带隙工程氮化物纳米线/硅异质结构的纳米级光电器件
  • 批准号:
    0907583
  • 财政年份:
    2009
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
Evaluation of Graphene Nanoribbons for Lateral Bandgap Engineered Devices
用于横向带隙工程器件的石墨烯纳米带的评估
  • 批准号:
    0802125
  • 财政年份:
    2008
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
CAREER: Dielectric Engineering of Quantum Wire Solids: Fundamentals to Applications
职业:量子线固体的介电工程:应用基础
  • 批准号:
    0645698
  • 财政年份:
    2007
  • 资助金额:
    $ 5万
  • 项目类别:
    Continuing Grant

相似海外基金

CAREER: Ultrawide Bandgap Aluminum Nitride FETs for Power Electronics
职业:用于电力电子器件的超宽带隙氮化铝 FET
  • 批准号:
    2338604
  • 财政年份:
    2024
  • 资助金额:
    $ 5万
  • 项目类别:
    Continuing Grant
Infrared photonics using ferroelectric scandium-aluminum nitride semiconductors
使用铁电钪铝氮化物半导体的红外光子学
  • 批准号:
    2414283
  • 财政年份:
    2024
  • 资助金额:
    $ 5万
  • 项目类别:
    Continuing Grant
CAREER:Doped Aluminum Nitride Ferroelectric Microelectromechanical Systems
职业:掺杂氮化铝铁电微机电系统
  • 批准号:
    1944248
  • 财政年份:
    2020
  • 资助金额:
    $ 5万
  • 项目类别:
    Continuing Grant
Development of fundamental technologies for fabrication of ultra-high voltage aluminum nitride semiconductor devices
超高压氮化铝半导体器件制造基础技术开发
  • 批准号:
    19K05292
  • 财政年份:
    2019
  • 资助金额:
    $ 5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
RAISE-EQuIP: Quantum repeater for long-distance quantum communication enabled by non-Gaussian cluster states on a scalable hybrid aluminum nitride and silicon nanophotonic platform
RAISE-EQuIP:用于长距离量子通信的量子中继器,通过可扩展的混合氮化铝和硅纳米光子平台上的非高斯簇态实现
  • 批准号:
    1842559
  • 财政年份:
    2018
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
Integrated surface acousto-optical devices on piezoelectric aluminum nitride thin films
压电氮化铝薄膜上的集成表面声光器件
  • 批准号:
    1307601
  • 财政年份:
    2013
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
Monolithically Integrated Aluminum Nitride Micromechanical Radio Front-End
单片集成氮化铝微机械无线电前端
  • 批准号:
    1237949
  • 财政年份:
    2012
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
The aluminum nitride by the new technique single crystal growth technology
新技术氮化铝单晶生长技术
  • 批准号:
    24560913
  • 财政年份:
    2012
  • 资助金额:
    $ 5万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
SBIR Phase I: High Quality and Low Cost Bulk Aluminum Nitride Substrates for UV LEDs
SBIR 第一阶段:用于 UV LED 的高质量、低成本块状氮化铝基板
  • 批准号:
    1212839
  • 财政年份:
    2012
  • 资助金额:
    $ 5万
  • 项目类别:
    Standard Grant
ACOUSTO-OPTO-MECHANICAL SYSTEMS in PIEZOELECTRIC ALUMINUM NITRIDE NANOFILMS FOR RADIO FREQUENCY PHOTONICS
用于射频光子学的压电氮化铝纳米薄膜中的声光机械系统
  • 批准号:
    1201659
  • 财政年份:
    2012
  • 资助金额:
    $ 5万
  • 项目类别:
    Continuing Grant
{{ showInfoDetail.title }}

作者:{{ showInfoDetail.author }}

知道了