2D Crystal Semiconductors: Electron Transport and Device Applications
2D 晶体半导体:电子传输和器件应用
基本信息
- 批准号:1232191
- 负责人:
- 金额:$ 36万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2012
- 资助国家:美国
- 起止时间:2012-08-01 至 2015-02-28
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The objective of this program is to unravel the science, and realize the technological potential of 2D crystal semiconductors focused on future generations of electronic devices. The intellectual merit is in the development of the science of controlled crystal growth of a range of new atomically thin 2D crystals and in the understanding of their physical properties. The electronic transport properties in 2D crystal semiconductors are currently not well understood. Yet, coupled with electrostatics, it is the key to device applications. Thus, this project aims directly at developing a thorough understanding of the transport properties of electrons in 2D crystal semiconductors through a combined experimental and modeling approach. The demonstration of their usage in large area, light, flexible and transparent high-performance electronic switches will be a transformative technology.The broader impacts are through an outreach program that effectively exploits the excitement and exceptional promise of the fledgling field, one where newcomers can make significant and lasting contributions. The proposed project involves several students. The theoretically oriented students will be involved in the project at the level of simulations of energy band diagrams and device structures. The experimentally inclined students will be involved in measurements of 2D crystal semiconductor properties and analysis. They will work directly with the PostDoctoral scholars, and the PIs by attending meetings and presenting their work. The project will result in the training of graduate students in a fascinating problem and its many fundamental consequences for electronic and optical devices. In additional to expanding the existing outreach programs that the PIs are orchestrating, two new activities are proposed with a special focus on the underrepresented groups: 1) experimental demonstration of nanoscale scanning probe techniques at the Expanding Your Horizon workshops where young school girls gather for their early exposure to how science and technology are employed in various careers, and 2) research projects designed for the women undergraduate students under the Dual Degree Program at the St. Mary?s College. The dissemination of research results by publications and presentations at conferences, and its inclusion in courses taught by the investigators will ensure the outreach of the research proposed to the widest possible audience.
该计划的目标是揭开科学的面纱,实现2D晶体半导体的技术潜力,专注于未来几代电子设备。智力上的价值在于发展了一系列新的原子薄2D晶体的受控晶体生长科学,并了解了它们的物理性质。二维晶体半导体中的电子输运性质目前还不是很清楚。然而,与静电学相结合,它是设备应用的关键。因此,本项目的目的是通过实验和建模相结合的方法,彻底了解电子在2D晶体半导体中的输运性质。在大面积、轻便、灵活和透明的高性能电子开关中展示它们的使用将是一项革命性的技术。更广泛的影响是通过一个推广计划来有效地利用这个羽翼未丰的领域的兴奋和特殊前景,在这个领域,新手可以做出重大和持久的贡献。提议的项目涉及几个学生。以理论为导向的学生将在能带图和器件结构的模拟水平上参与到该项目中。倾向于实验的学生将参与2D晶体半导体性质的测量和分析。他们将通过出席会议和介绍他们的工作,直接与博士后学者和PI合作。该项目将对研究生进行培训,研究一个有趣的问题及其对电子和光学设备的许多基本影响。除了扩大私人投资机构正在策划的现有外展计划外,还提议开展两项新活动,特别针对代表性不足的群体:1)在扩展你的视野工作坊上实验演示纳米扫描探头技术,年轻的女学生聚集在一起,尽早接触到科学和技术如何在不同的职业中就业;2)为圣玛丽?S学院双学位计划下的女本科生设计的研究项目。通过出版物和在会议上的发言来传播研究成果,并将其纳入调查员讲授的课程,将确保将拟议的研究成果推广到尽可能广泛的受众。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Debdeep Jena其他文献
Two-dimensional semiconductors for transistors
用于晶体管的二维半导体
- DOI:
10.1038/natrevmats.2016.52 - 发表时间:
2016-08-17 - 期刊:
- 影响因子:86.200
- 作者:
Manish Chhowalla;Debdeep Jena;Hua Zhang - 通讯作者:
Hua Zhang
Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs
- DOI:
10.1007/s11664-013-2841-3 - 发表时间:
2013-11-23 - 期刊:
- 影响因子:2.500
- 作者:
Jorge A. Ferrer-Pérez;Bruce Claflin;Debdeep Jena;Mihir Sen;Ramakrishna Vetury;Donald Dorsey - 通讯作者:
Donald Dorsey
Evidence of many-body, fermi-energy edge singularity in InN films grown on GaN buffer layers
GaN 缓冲层上生长的 InN 薄膜中多体费米能边缘奇点的证据
- DOI:
- 发表时间:
2007 - 期刊:
- 影响因子:0
- 作者:
Xiaodong Mu;Yujie J. Ding;Kejia Wang;Debdeep Jena;J. Khurgin - 通讯作者:
J. Khurgin
Growth windows of epitaxial NbN x films on c -plane sapphire and their structural and superconducting properties
c面蓝宝石外延NbN x 薄膜的生长窗口及其结构和超导性能
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
J. Wright;Huili Grace;Debdeep Jena - 通讯作者:
Debdeep Jena
スパッタアニールAlN上GaN/AlN 2次元正孔ガス構造の電気特性評価と微細構造解析
溅射退火AlN上GaN/AlN二维空穴气体结构的电性能评估和微观结构分析
- DOI:
- 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
西村 海音;中西 悠太;林 侑介;藤平 哲也;Chaudhuri Reet;Cho Yongjin;Xing Huili (Grace);Debdeep Jena;上杉 謙次郎;三宅 秀人;酒井 朗 - 通讯作者:
酒井 朗
Debdeep Jena的其他文献
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{{ truncateString('Debdeep Jena', 18)}}的其他基金
I-Corps: Aluminum Nitride-based Power Transistors
I-Corps:氮化铝基功率晶体管
- 批准号:
1933825 - 财政年份:2019
- 资助金额:
$ 36万 - 项目类别:
Standard Grant
RAISE-TAQS: Integrated Room Temperature Single-Photon based Quantum-Secure LiFi Systems
RAISE-TAQS:集成室温单光子量子安全 LiFi 系统
- 批准号:
1839196 - 财政年份:2018
- 资助金额:
$ 36万 - 项目类别:
Standard Grant
Polarization-Driven Electron-Hole Bilayers in Quantum Wells
量子阱中偏振驱动的电子空穴双层
- 批准号:
1710298 - 财政年份:2017
- 资助金额:
$ 36万 - 项目类别:
Continuing Grant
EFRI NewLAW: Non-Reciprocal Wave Propagation Devices by Fermionic Emulation and Exceptional Point Physics
EFRI NewLAW:通过费米子仿真和异常点物理实现非互易波传播装置
- 批准号:
1741694 - 财政年份:2017
- 资助金额:
$ 36万 - 项目类别:
Continuing Grant
DMREF: Collaborative Research: Extreme Bandgap Semiconductors
DMREF:协作研究:极限带隙半导体
- 批准号:
1534303 - 财政年份:2015
- 资助金额:
$ 36万 - 项目类别:
Standard Grant
2D Crystal Semiconductors: Electron Transport and Device Applications
2D 晶体半导体:电子传输和器件应用
- 批准号:
1523356 - 财政年份:2015
- 资助金额:
$ 36万 - 项目类别:
Standard Grant
Nanoscale Optoelectronics with Polarization and Bandgap Engineered Nitride Nanowire/Silicon Heterostructures
具有偏振和带隙工程氮化物纳米线/硅异质结构的纳米级光电器件
- 批准号:
0907583 - 财政年份:2009
- 资助金额:
$ 36万 - 项目类别:
Standard Grant
Evaluation of Graphene Nanoribbons for Lateral Bandgap Engineered Devices
用于横向带隙工程器件的石墨烯纳米带的评估
- 批准号:
0802125 - 财政年份:2008
- 资助金额:
$ 36万 - 项目类别:
Standard Grant
CAREER: Dielectric Engineering of Quantum Wire Solids: Fundamentals to Applications
职业:量子线固体的介电工程:应用基础
- 批准号:
0645698 - 财政年份:2007
- 资助金额:
$ 36万 - 项目类别:
Continuing Grant
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