MRI: Acquisition of a Reactive Ion Etching, Inductively Coupled Plasma Tool for Nanofabrication

MRI：获得用于纳米加工的反应离子蚀刻、感应耦合等离子体工具

• 批准号: 0923475
• 负责人: Stuart Solin
• 金额: $ 26.16万
• 依托单位: Washington University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2009
• 资助国家: 美国
• 起止时间: 2009-09-01 至 2012-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0923475&HistoricalAwards=false
• 关键词: MRI; Acquisition; Reactive; Ion; Etching

0923475SolinThe applicants propose the acquisition of a state-of-the-art, reactive ion etching, inductively coupled plasma (RIE/ICP) system to develop the nanofabrication capabilities at Washington University (WU), which will be extended to researchers in the St. Louis metropolitan area and elsewhere. The capability for high-spatial resolution, site-specific fabrication/modification of nanostructures using electron-beam lithography (eBL) and RIE/ICP is essential for cutting-edge research in integrated nanostructured materials and devices. RIE/ICP provides dry-etch processing that is standard in nanofabrication design work, and allows the creation of sophisticated, three-dimensional, functional devices with nanometer-scale features.

申请人建议收购最先进的反应离子刻蚀感应耦合等离子体(RIE/ICP)系统，以开发华盛顿大学(WU)的纳米制造能力，该能力将扩展到圣路易斯大都市区和其他地方的研究人员。利用电子束光刻(EBL)和RIE/ICP对纳米结构进行高空间分辨率、特定部位的制造/修改的能力对于集成纳米结构材料和器件的前沿研究至关重要。RIE/ICP提供干法蚀刻工艺，这是纳米制造设计工作中的标准，并允许创建具有纳米级特征的复杂、三维、功能器件。