MRI: Acquisition of a Reactive Ion Etching, Inductively Coupled Plasma Tool for Nanofabrication

申请人提出获得最先进的反应离子蚀刻感应耦合等离子体（RIE/ICP）系统，以在华盛顿大学（WU）开发纳米织物能力，其将扩展到圣路易斯大都市区和其他地方的研究人员。使用电子束光刻（eBL）和RIE/ICP进行高空间分辨率、特定位置的纳米结构制造/修饰的能力对于集成纳米结构材料和器件的前沿研究至关重要。RIE/ICP提供了干蚀刻工艺，这是纳米芯片设计工作的标准，并允许创建具有纳米级特征的复杂的三维功能器件。

0923475SolinThe applicants propose the acquisition of a state-of-the-art, reactive ion etching, inductively coupled plasma (RIE/ICP) system to develop the nanofabrication capabilities at Washington University (WU), which will be extended to researchers in the St. Louis metropolitan area and elsewhere. The capability for high-spatial resolution, site-specific fabrication/modification of nanostructures using electron-beam lithography (eBL) and RIE/ICP is essential for cutting-edge research in integrated nanostructured materials and devices. RIE/ICP provides dry-etch processing that is standard in nanofabrication design work, and allows the creation of sophisticated, three-dimensional, functional devices with nanometer-scale features.