Investigations on HVPE - grown InGaN quantum wells on non- and semipolar GaN

非极性和半极性 GaN 上 HVPE 生长 InGaN 量子阱的研究

• 批准号: 198464253
• 负责人: Professor Dr. Josef Zweck
• 金额: --
• 依托单位: Institut für Experimentelle und Angewandte Physik
• 依托单位国家: 德国
• 项目类别: Research Units
• 财政年份: 2012
• 资助国家: 德国
• 起止时间: 2011-12-31 至 2015-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/198464253?language=en
• 关键词: Investigations; HVPE; grown; InGaN; quantum

The use of semi- and non-polar crystal facets for the deposition of quantum wells designed for green emitting lasers has been shown to be a successful concept. Therefore, the future research – as suggested by this proposal – is mainly focused on the measurement of internal (piezo-)electric fields both in GaN and InGaN layers. The goals are:- The piezoelectric fields created within quantum wells on various crystal facettes will be measured and compared to theoretical calculations.- The piezoelectric field present within the GaN host material will be measured quantitatively in strength and lateral extension.- The In content within the quantum well will be measured by EDX.- The measured value of the piezoelectric field will be correlated with the In content of the InGaN quantum well.- The density and type of crystallographic defects formed in the quantum well region will be correlated with the In content.

利用半极性和非极性晶面沉积用于绿色发射激光器的量子阱已被证明是一个成功的概念。因此，根据这一建议，未来的研究主要集中在GaN和InGaN层的内部(压)电场的测量上。目标是：-将测量在不同晶体小面上的量子井内产生的压电场，并与理论计算进行比较。-在GaN主体材料内存在的压电场将在强度和横向延伸方面进行定量测量。-量子井内的In含量将由EDX测量。-压电场的测量值将与InGaN量子井的In含量相关。-在量子井区形成的晶体缺陷的密度和类型将与In含量相关。