Semipolar GaInN quantum wells on pre-structured surfaces for applications in laser diodes
用于激光二极管应用的预结构化表面上的半极性 GaInN 量子阱
基本信息
- 批准号:198464629
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:德国
- 项目类别:Research Units
- 财政年份:2012
- 资助国家:德国
- 起止时间:2011-12-31 至 2018-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In the first phase of the project "Untersuchungen zur Reduzierung der piezoelektrischen Felder in GaInN-Quantenfilmen" (Investigations of reduced piezoelectric fields in GaInN quantum wells), we have realized highly efficient semipolar light emitting diode structures on side facets of GaN stripes. Currently, as part of the second project phase, we are investigating the realization possibilities of longer wavelength laser diodes on the basis of semipolar AlGaInN structures. These structures are in particular interesting for devices like laser diodes which require stimulated emission because of the better overlap of the electron and hole wave functions. In the second phase, semipolar stripe structures with periods in the range of few hundred nanometers – suited for third order DFB gratings – and their embedding into waveguide structures have been achieved. In the third phase, we will eventually study several possible laser diode concepts: (i) Single stripe laser diodes, where a selectively deposited AlGaInN stripe directly acts as laser resonator (stripe width in the range of few micrometers); (ii) DFB-laser concept with stripe periods in the range of a few 100 nm; (iii) an arrangement of such stripes so that the light is emitted perpendicular to the surface by using well-designed interference of the stripes. A particular focus of our studies will be on the shift of the emission wavelength into the green spectral range. This requires investigations, how the In concentration in our semipolar quantum wells can be increased accordingly. In order to reach these goals, investigations about selective epitaxy of complex device structures will be done, supported by respective technology studies and various methods of locally resolved characterization.
在项目“Untersuchungen zur Reduzierung der piezoelektrischen Felder in GaInN-Quantenfilmen”(GaInN量子威尔斯阱中压电场的研究)的第一阶段,我们在GaN条的侧面实现了高效的半极性发光二极管结构。目前,作为第二项目阶段的一部分,我们正在研究半极性AlGaInN结构的基础上实现更长波长激光二极管的可能性。这些结构对于需要受激发射的激光二极管等器件特别有意义,因为电子和空穴波函数的重叠更好。在第二阶段,半极性条纹结构的周期在几百纳米的范围内-适合三阶DFB光栅-和他们的嵌入到波导结构已经实现。在第三阶段,我们将最终研究几种可能的激光二极管概念:(i)单条形激光二极管,其中选择性沉积的AlGaInN条形直接用作激光谐振器(ii)具有在几个100 nm范围内的条纹周期的DFB激光器概念;(iii)这种条纹的布置,使得通过使用条纹的良好设计的干涉,光垂直于表面发射。我们的研究的一个特别的重点将是发射波长到绿色光谱范围的移位。这需要调查,如何在我们的半极性量子威尔斯浓度可以相应地增加。为了实现这些目标,将进行有关复杂器件结构的选择性外延的调查,由各自的技术研究和各种局部解析表征方法支持。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Professor Dr. Ferdinand Scholz其他文献
Professor Dr. Ferdinand Scholz的其他文献
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{{ truncateString('Professor Dr. Ferdinand Scholz', 18)}}的其他基金
Investigations on HVPE of non-and semipolar GaN
非和半极性GaN的HVPE研究
- 批准号:
72517506 - 财政年份:2008
- 资助金额:
-- - 项目类别:
Research Units
Untersuchungen zu semipolaren GaInN-Quantenfilmen auf strukturierten Oberflächen für Anwendungen in Laserdioden
研究结构化表面上的半极性 GaInN 量子薄膜在激光二极管中的应用
- 批准号:
32705802 - 财政年份:2006
- 资助金额:
-- - 项目类别:
Research Grants
Untersuchungen von AIN und AIN-Al2O3-Strukturen als neue Materialien für elektronische Hochtemperatur-Hochleistungs-Bauelemente
AIN 和 AIN-Al2O3 结构作为高温高性能电子元件新材料的研究
- 批准号:
5452886 - 财政年份:2005
- 资助金额:
-- - 项目类别:
Research Grants
Untersuchung von Verspannung und Piezoelektrizität in GaInN-GaN-Hetero- und Quantenfilmstrukturen
GaInN-GaN 异质膜和量子膜结构中的应变和压电性研究
- 批准号:
5235988 - 财政年份:2000
- 资助金额:
-- - 项目类别:
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72578690 - 财政年份:2008
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- 批准号:
20860057 - 财政年份:2008
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研究结构化表面上的半极性 GaInN 量子薄膜在激光二极管中的应用
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5372507 - 财政年份:1997
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