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AIR Option 2: Research Alliance - Development of key technology for next generation projection lithography of integrated circuits at 6.X nm wavelength

AIR Option 2: Research Alliance - Development of key technology for next generation projection lithography of integrated circuits at 6.X nm wavelength
AIR选项2:研究联盟——开发下一代6.X nm波长集成电路投影光刻关键技术
批准号:
1343456
负责人:
Jorge Rocca
金额:
$40.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-10-01 至 2016-09-30

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中文摘要
翻译
这个PFI:空气研究联盟项目专注于6.X nm波长的极端紫外线(EUV)光源技术的转换和转让,以填补未来几代集成电路先进光刻技术的空白。这些技术服务于半导体行业,全球市场价值2980亿美元,该行业生产用于几乎所有工业、汽车、电信、计算、军事、医疗和消费产品的半导体芯片。新一代6.X nm波长光刻将把摩尔·S定律和半导体行业的增长延伸到下一个十年。该项目将解决6.X纳米等离子体光源的开发,以印刷集成电路,以及开发紧凑型光源,以应对与纳米计量相关的挑战。该项目还将通过实现新的光源来印刷和表征较小尺寸的集成电路特征,从而加速技术转让,从而在半导体和激光行业以及高价值半导体制造设备产品中创造新的就业机会。致力于加快技术向市场领域转移的合作伙伴包括NSF极端紫外线科学和技术中心、在EUV技术方面拥有丰富专业知识的加州大学圣地亚哥分校,以及计划将6.X nm波长集成电路印刷技术商业化的光刻光源领先者Cmer公司。将光刻技术扩展到较小尺寸的潜在经济影响是巨大的。半导体行业是美国经济的关键驱动力。光刻工艺是半导体制造工艺中最关键和最资本密集的部分,因此将显著提高美国在半导体设备市场的竞争力。在美国和国外的半导体设施中,光刻处理和计量设备约占资本设备成本的50%。社会影响包括高科技部门的就业机会,以及对提高世界范围内生活水平和寿命的贡献。拟议的学术/行业生态系统还将允许创造一个独特的环境,以教育和培训必要的劳动力,以保持美国在这一对国家至关重要的领域-S经济-的竞争力。
英文摘要
This PFI: AIR Research Alliance project focuses on the translation and transfer of extreme ultraviolet (EUV) source technologies at 6.Xnm wavelength to fill technology gaps in advanced lithography for future generations of integrated circuits. These technologies serve the semiconductor industry, with a world market valued of $298 Billion, that manufactures the semiconductor chips used in virtually all industrial, automotive, telecommunications, computing, military, medical, and consumer products. The next-generation 6.X nm wavelength lithography will extend Moore?s law and the growth of the semiconductor industry into the next decade. This project will address both the development of plasma-based light sources at 6.X nm to print integrated circuits, as well as the development of compact light sources to address challenges associated with nano-metrology. This project will also accelerate technology transfer by enabling the realization of new light sources to print and characterize integrated circuit features of smaller dimension, resulting in the creation of new jobs in the semiconductor and laser industry, and in high value semiconductor manufacturing equipment products. The partnership engaged to accelerate the transfer of the technologies to the market domain includes the NSF Center for Extreme Ultraviolet Science and Technology, the University of California at San Diego with extensive expertise in EUV technology, and Cymer Inc., a leader in light sources for lithography, that plans to commercialize the 6.X nm wavelength integrated circuit printing technology. The potential economic impact of extending lithography to smaller dimensions is enormous. The semiconductor industry is a key driver of the U.S. economy. The lithography process is the single most critical and capital intensive part of the semiconductor manufacturing process and as such will significantly contribute to the U.S. competitiveness in the semiconductor equipment market. Lithographic processing and metrology equipment accounts for ~50% of capital equipment cost in U.S. and foreign semiconductor facilities. The societal impact includes jobs in the high technology sector and contributions to an increased standard of living and lifespan world-wide. The proposed academic/industry ecosystem will also allow for the creation of a unique environment to educate and train the workforce necessary to maintain the US competitiveness in this area critical to the nation?s economy.
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PFI-TT: Enhancing the Mass Production of Advanced Integrated Circuits
  • 批准号:
    2141227
  • 项目类别:
    Standard Grant
  • 资助金额:
    $25.0万
  • 财政年份:
    2022
  • 负责人:
    Jorge Rocca
  • 依托单位:
REU Site: Engineering Applications of Extreme Ultra-Violet (EUV) Laser Light
  • 批准号:
    1852537
  • 项目类别:
    Standard Grant
  • 资助金额:
    $37.13万
  • 财政年份:
    2019
  • 负责人:
    Jorge Rocca
  • 依托单位:
PFI:AIR - TT: Pulse Shaping for Increased Conversion Efficiency in Extreme Ultraviolet Lithography Sources for the Fabrication of Next Generation Integrated Circuits
  • 批准号:
    1701238
  • 项目类别:
    Standard Grant
  • 资助金额:
    $19.99万
  • 财政年份:
    2017
  • 负责人:
    Jorge Rocca
  • 依托单位:
REU Site: Engineering Applications of Extreme Ultra-Violet (EUV) Laser Light
  • 批准号:
    1461231
  • 项目类别:
    Standard Grant
  • 资助金额:
    $33.56万
  • 财政年份:
    2015
  • 负责人:
    Jorge Rocca
  • 依托单位:
国内基金
海外基金
Vessel co-option介导贝伐单抗治疗结直肠癌肝转移耐药的机制及克服策略研究
  • 批准号:
    --
  • 项目类别:
    面上项目
  • 资助金额:
    52万元
  • 批准年份:
    2022
  • 负责人:
    陈敏锋
  • 依托单位: