AIR Option 2: Research Alliance - Development of key technology for next generation projection lithography of integrated circuits at 6.X nm wavelength

AIR选项2：研究联盟——开发下一代6.X nm波长集成电路投影光刻关键技术

• 批准号: 1343456
• 负责人: Jorge Rocca
• 金额: $ 40万
• 依托单位: Colorado State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-10-01 至 2016-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1343456&HistoricalAwards=false
• 关键词: AIR; Option; Research; Alliance; Development

This PFI: AIR Research Alliance project focuses on the translation and transfer of extreme ultraviolet (EUV) source technologies at 6.Xnm wavelength to fill technology gaps in advanced lithography for future generations of integrated circuits. These technologies serve the semiconductor industry, with a world market valued of $298 Billion, that manufactures the semiconductor chips used in virtually all industrial, automotive, telecommunications, computing, military, medical, and consumer products. The next-generation 6.X nm wavelength lithography will extend Moore?s law and the growth of the semiconductor industry into the next decade. This project will address both the development of plasma-based light sources at 6.X nm to print integrated circuits, as well as the development of compact light sources to address challenges associated with nano-metrology. This project will also accelerate technology transfer by enabling the realization of new light sources to print and characterize integrated circuit features of smaller dimension, resulting in the creation of new jobs in the semiconductor and laser industry, and in high value semiconductor manufacturing equipment products. The partnership engaged to accelerate the transfer of the technologies to the market domain includes the NSF Center for Extreme Ultraviolet Science and Technology, the University of California at San Diego with extensive expertise in EUV technology, and Cymer Inc., a leader in light sources for lithography, that plans to commercialize the 6.X nm wavelength integrated circuit printing technology. The potential economic impact of extending lithography to smaller dimensions is enormous. The semiconductor industry is a key driver of the U.S. economy. The lithography process is the single most critical and capital intensive part of the semiconductor manufacturing process and as such will significantly contribute to the U.S. competitiveness in the semiconductor equipment market. Lithographic processing and metrology equipment accounts for ~50% of capital equipment cost in U.S. and foreign semiconductor facilities. The societal impact includes jobs in the high technology sector and contributions to an increased standard of living and lifespan world-wide. The proposed academic/industry ecosystem will also allow for the creation of a unique environment to educate and train the workforce necessary to maintain the US competitiveness in this area critical to the nation?s economy.

该PFI：AIR研究联盟项目的重点是转换和转移6.Xnm波长的极紫外（EUV）光源技术，以填补未来几代集成电路先进光刻技术的空白。这些技术服务于半导体行业，全球市场价值2980亿美元，生产几乎所有工业，汽车，电信，计算，军事，医疗和消费产品中使用的半导体芯片。下一代6.X nm波长光刻将扩展摩尔？的法律和半导体行业的增长进入下一个十年。该项目将解决6.X nm等离子体光源的开发，以打印集成电路，以及紧凑型光源的开发，以应对与纳米计量相关的挑战。该项目还将通过实现新光源来打印和表征更小尺寸的集成电路特征，从而加速技术转让，从而在半导体和激光行业以及高价值半导体制造设备产品中创造新的就业机会。参与加速技术向市场领域转移的合作伙伴包括NSF极紫外科学与技术中心、加州大学圣地亚哥分校（在EUV技术方面拥有广泛的专业知识）和Cymer Inc.，该公司是光刻光源的领导者，计划将6.X nm波长的集成电路印刷技术商业化。将微影技术扩展到更小尺寸的潜在经济影响是巨大的。半导体行业是美国经济的关键驱动力。光刻工艺是半导体制造工艺中最关键和资本密集的部分，因此将大大有助于美国在半导体设备市场的竞争力。光刻工艺和计量设备占美国和外国半导体设施资本设备成本的约50%。社会影响包括高科技部门的就业机会，以及对提高全世界生活水平和寿命的贡献。拟议的学术/工业生态系统还将允许创造一个独特的环境，以教育和培训必要的劳动力，以保持美国在这一领域的竞争力，这对国家至关重要？的经济。