EFRI 2-DARE: 2D Crystals formed by Activated Atomic Layer Deposition

EFRI 2-DARE:通过活化原子层沉积形成的 2D 晶体

基本信息

  • 批准号:
    1433378
  • 负责人:
  • 金额:
    $ 196.45万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2014
  • 资助国家:
    美国
  • 起止时间:
    2014-09-15 至 2020-02-29
  • 项目状态:
    已结题

项目摘要

Non-Technical: Transition metal chalcogenides (TMCs) crystallize as two-dimensional sheets of atoms, giving them unusual electronic properties that can be varied by changing the number, arrangement and compositions of the layers. The adjustment of these parameters provides manufacturing challenges that must be overcome to realize potential applications in electronics, photonics and related technologies. The project will research new deposition and processing methods for novel thin film and superconducting devices. This research will enable atomic level film formation at low temperatures that are compatible with low-cost glass and plastic substrates. Techniques to integrate metal contact layers and dielectric films with TMCs to produe working devices will also be researched. The project will support the research of five graduate students and summer research opportunities for undergraduates and high school students from underrepresented groups and economically challenged regions of Pennsylvania. Undergraduates will also participate in the project as part of their senior capstone engineering design project organized through the Learning Factory at Penn State.Technical: This EFRI 2-DARE project is aimed at the development of new synthetic routes and integration strategies for monolayer and multilayer transition metal chalcogenides (TMCs) to enable discovery of fundamental structure-property relationships, the exploration of novel physical phenomena, and the creation of new thin film and superconducting device technologies. An activated atomic layer deposition (ALD) process for WSe2, FeSe, NbSe2 and related 2D materials will be developed that incorporates thermal and plasma sources to promote precursor decomposition, thereby enabling reduced substrate temperatures that are needed for deposition and dielectric/metal integration on van der Waals surfaces. Epitaxial templating and substrate patterning will be used to control nucleation and promote in-plane forces to induce self-assembly of 2D islands over large areas. In-situ diagnostics will be used to provide insights into the ALD chemistry. Ultra-high resolution aberration-corrected (scanning) transmission electron microscopy ((S)TEM) imaging and related spectroscopy techniques will enable direct imaging and chemical characterization of defects in monolayer and multilayer films, providing information not always accessible by conventional TEM. Device fabrication processes will be developed to enable detailed studies of electrical transport and superconductivity in TMCs. Gated current-voltage measurements, Hall-effect, and quasi-static capacitance-voltage measurements will be used to characterize the transport properties of WSe2 and WS2 thin film devices. Superconductivity in gated FeSe and NbSe2 structures will also be examined to seek high-temperature and unconventional superconductivity.
非技术:过渡金属硫属化物(TMC)结晶为二维原子片,赋予它们不寻常的电子特性,可以通过改变层的数量,排列和组成来改变。这些参数的调整提供了必须克服的制造挑战,以实现电子学、光子学和相关技术中的潜在应用。该项目将研究新型薄膜和超导器件的新沉积和加工方法。这项研究将使原子水平的薄膜形成在低温下,与低成本的玻璃和塑料基板兼容。将金属接触层和介电薄膜与金属薄膜集成以生产工作器件的技术也将被研究。 该项目将支持五名研究生的研究,并为来自代表性不足的群体和宾夕法尼亚州经济困难地区的本科生和高中生提供暑期研究机会。 本科生也将参与该项目,作为他们通过宾夕法尼亚州立大学学习工厂组织的高级顶点工程设计项目的一部分。该EFRI 2-DARE项目旨在开发单层和多层过渡金属硫属化物(TMC)的新合成路线和集成策略,以发现基本结构-性能关系,探索新的物理现象,以及创造新的薄膜和超导器件技术。 将开发用于WSe 2、FeSe、NbSe 2和相关2D材料的活化原子层沉积(ALD)工艺,其结合热和等离子体源以促进前体分解,从而能够降低货车德瓦尔斯表面上沉积和电介质/金属集成所需的衬底温度。外延模板和衬底图案化将用于控制成核和促进面内力,以诱导大面积的2D岛的自组装。原位诊断将用于提供对ALD化学的见解。超高分辨率像差校正(扫描)透射电子显微镜((S)TEM)成像和相关光谱技术将使单层和多层膜中缺陷的直接成像和化学表征成为可能,提供常规TEM无法获得的信息。器件制造工艺将被开发,以使详细的研究电输运和超导性的TMC。门控电流-电压测量,霍尔效应,准静态电容-电压测量将被用来表征WSe 2和WS 2薄膜器件的传输特性。门控FeSe和NbSe 2结构中的超导性也将被研究,以寻求高温和非常规的超导性。

项目成果

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Joan Redwing其他文献

Epitaxial Growth of MoS2 on Sapphire (c-Al2O3) by MOCVD
MOCVD 在蓝宝石 (c-Al2O3) 上外延生长 MoS2
  • DOI:
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Myeongok Kim;Nazmul Ahsan;Nicholas Trainor;Chen Chen;Dorota Kowalczyk;Joan Redwing;Yoshitaka Okada
  • 通讯作者:
    Yoshitaka Okada
Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy
  • DOI:
    10.1007/s11664-013-2491-5
  • 发表时间:
    2013-03-09
  • 期刊:
  • 影响因子:
    2.500
  • 作者:
    Jeffrey M. Leathersich;Mihir Tungare;Xiaojun Weng;Puneet Suvarna;Pratik Agnihotri;Morgan Evans;Joan Redwing;F. Shahedipour-Sandvik
  • 通讯作者:
    F. Shahedipour-Sandvik
Approaches to high-efficiency intermediate band photovoltaics
高效中频光伏发电的方法
  • DOI:
  • 发表时间:
    2021
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Myeongok Kim;Nazmul Ahsan;Nicholas Trainor;Chen Chen;Dorota Kowalczyk;Joan Redwing;Yoshitaka Okada;Yoshitaka Okada
  • 通讯作者:
    Yoshitaka Okada

Joan Redwing的其他文献

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{{ truncateString('Joan Redwing', 18)}}的其他基金

Participant Support for the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23); Tucson, Arizona; 13-18 August 2023
第 23 届美国晶体生长和外延会议 (ACCGE-23) 的参与者支持;
  • 批准号:
    2333144
  • 财政年份:
    2023
  • 资助金额:
    $ 196.45万
  • 项目类别:
    Standard Grant
MIP: 2D Crystal Consortium (MIP-2DCC)
MIP:2D 晶体联盟 (MIP-2DCC)
  • 批准号:
    2039351
  • 财政年份:
    2021
  • 资助金额:
    $ 196.45万
  • 项目类别:
    Cooperative Agreement
Participation Support for Students to Attend the 22nd American Conference on Crystal Growth and Epitaxy, Virtual, August 2-4, 2021
为学生参加第 22 届美国晶体生长和外延会议提供参与支持,虚拟会议,2021 年 8 月 2-4 日
  • 批准号:
    2138270
  • 财政年份:
    2021
  • 资助金额:
    $ 196.45万
  • 项目类别:
    Standard Grant
EAGER Collaborative Research: Fundamentals of Tunneling, Heterojunction-based 2D-Hot Electron Transistors
EAGER 协作研究:隧道、异质结二维热电子晶体管的基础知识
  • 批准号:
    2029729
  • 财政年份:
    2020
  • 资助金额:
    $ 196.45万
  • 项目类别:
    Standard Grant
2019 17th International Summer School on Crystal Growth (ISSCG-17)(Granby, Colorado)
2019年第十七届晶体生长国际暑期学校(ISSCG-17)(科罗拉多州格兰比)
  • 批准号:
    1917552
  • 财政年份:
    2019
  • 资助金额:
    $ 196.45万
  • 项目类别:
    Standard Grant
Graphene Encapsulated Growth of 2D Materials
石墨烯封装的二维材料生长
  • 批准号:
    1808900
  • 财政年份:
    2018
  • 资助金额:
    $ 196.45万
  • 项目类别:
    Standard Grant
NSF EFRI-2DARE, DMREF-2D and MIP Grantees Meeting to be held in November 13-15, 2017 in State College, PA
NSF EFRI-2DARE、DMREF-2D 和 MIP 受资助者会议将于 2017 年 11 月 13 日至 15 日在宾夕法尼亚州州立学院举行
  • 批准号:
    1748382
  • 财政年份:
    2017
  • 资助金额:
    $ 196.45万
  • 项目类别:
    Standard Grant
MIP: 2D Crystal Consortium (MIP-2DCC)
MIP:2D 晶体联盟 (MIP-2DCC)
  • 批准号:
    1539916
  • 财政年份:
    2016
  • 资助金额:
    $ 196.45万
  • 项目类别:
    Cooperative Agreement
PFI:AIR - TT: One-Step Process for High Efficiency Textured Solar Cells
PFI:AIR - TT:高效纹理太阳能电池的一步工艺
  • 批准号:
    1414236
  • 财政年份:
    2014
  • 资助金额:
    $ 196.45万
  • 项目类别:
    Standard Grant
GOALI: Strained Layer Heterostructures for GaN-on-Si Epitaxy
目标:用于 GaN-on-Si 外延的应变层异质结构
  • 批准号:
    1410765
  • 财政年份:
    2014
  • 资助金额:
    $ 196.45万
  • 项目类别:
    Standard Grant

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DARE:为下一代跨理事会可信研究环境的联合网络创建蓝图。
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