Participation Support for Students to Attend the 22nd American Conference on Crystal Growth and Epitaxy, Virtual, August 2-4, 2021
为学生参加第 22 届美国晶体生长和外延会议提供参与支持,虚拟会议,2021 年 8 月 2-4 日
基本信息
- 批准号:2138270
- 负责人:
- 金额:$ 0.7万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2021
- 资助国家:美国
- 起止时间:2021-08-15 至 2022-07-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This award provides participant support for attendees of the 22nd American Conference on Crystal Growth and Epitaxy to be held virtually from August 2-4, 2021. The symposium focuses on new research and development activities in bulk crystal and epitaxial thin film growth. The students and faculty present through oral and poster sessions their latest research results to the crystal growth and epitaxy, advanced manufacturing and broader engineering communities. Priority is given to student and young faculty participants who are women or who come from underrepresented minority groups. This approach promotes diverse participation at the conference, in the short term, and in STEM fields, in the long term. This award benefits the nation through the education of a skilled and diverse manufacturing workforce, which is better prepared to provide transformative solutions the challenges in their chosen fields. The conference plays an important role in supporting and sustaining the important field of crystal growth and epitaxy, which is an important component of semiconductor research. This conference is timely because of renewed interest in the revitalization of semiconductor manufacturing in the U.S.This participant support is expected to benefit the students' professional, scientific and technical development. Attendance at the conference gives the students and faculty a broader view of crystal growth and thin film epitaxy, its fundamentals, advanced manufacturing, advanced characterization, and applications. Symposium topics include fundamentals of materials synthesis, crystal structure analysis, deposition and crystal growth techniques and processes, high throughput manufacturing, process modeling, monitoring and control, and specialized topics, such as 2D nanomaterials. Attendees will learn about state-of-the-art research in their technical areas via access to several technical and professional development talks by leading domestic and international speakers. Students and young faculty enhance their communication skills through oral and poster presentations and in-depth discussions of their work with peers in their technical areas. This interactive experience significantly broadens student education, increases their enthusiasm for their research topic, acquaints them with expectations for scientific careers, and exposes them to new approaches for innovative research.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
该奖项为将于2021年8月2日至4日举行的第22届美国晶体生长和外延大会的与会者提供参与者支持。研讨会的重点是在体晶体和外延薄膜生长的新的研究和开发活动。学生和教师通过口头和海报会议介绍他们的最新研究成果,晶体生长和外延,先进制造和更广泛的工程社区。优先考虑女性或来自代表性不足的少数群体的学生和年轻教师。这种方法在短期内促进了会议的多元化参与,在长期内促进了STEM领域的多元化参与。该奖项通过对熟练和多样化的制造业劳动力的教育使国家受益,这些劳动力更好地准备为他们所选领域的挑战提供变革性解决方案。该会议在支持和维持晶体生长和外延这一重要领域方面发挥着重要作用,这是半导体研究的重要组成部分。这次会议是及时的,因为在美国半导体制造业的振兴重新感兴趣,这种参与者的支持,预计将有利于学生的专业,科学和技术的发展。出席会议使学生和教师对晶体生长和薄膜外延,其基础,先进制造,先进表征和应用有了更广泛的了解。研讨会主题包括材料合成基础、晶体结构分析、沉积和晶体生长技术和工艺、高通量制造、工艺建模、监测和控制以及专业主题,例如2D纳米材料。 与会者将通过参加国内和国际领先演讲者的几次技术和专业发展讲座,了解其技术领域的最新研究。学生和年轻的教师通过口头和海报演示以及与技术领域的同行深入讨论他们的工作来提高他们的沟通能力。这种互动体验大大拓宽了学生的教育,提高了他们对研究课题的热情,使他们对科学事业充满期望,并使他们接触到创新研究的新方法。该奖项反映了NSF的法定使命,并通过使用基金会的智力价值和更广泛的影响审查标准进行评估,被认为值得支持。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Joan Redwing其他文献
Epitaxial Growth of MoS2 on Sapphire (c-Al2O3) by MOCVD
MOCVD 在蓝宝石 (c-Al2O3) 上外延生长 MoS2
- DOI:
- 发表时间:
2022 - 期刊:
- 影响因子:0
- 作者:
Myeongok Kim;Nazmul Ahsan;Nicholas Trainor;Chen Chen;Dorota Kowalczyk;Joan Redwing;Yoshitaka Okada - 通讯作者:
Yoshitaka Okada
Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy
- DOI:
10.1007/s11664-013-2491-5 - 发表时间:
2013-03-09 - 期刊:
- 影响因子:2.500
- 作者:
Jeffrey M. Leathersich;Mihir Tungare;Xiaojun Weng;Puneet Suvarna;Pratik Agnihotri;Morgan Evans;Joan Redwing;F. Shahedipour-Sandvik - 通讯作者:
F. Shahedipour-Sandvik
Approaches to high-efficiency intermediate band photovoltaics
高效中频光伏发电的方法
- DOI:
- 发表时间:
2021 - 期刊:
- 影响因子:0
- 作者:
Myeongok Kim;Nazmul Ahsan;Nicholas Trainor;Chen Chen;Dorota Kowalczyk;Joan Redwing;Yoshitaka Okada;Yoshitaka Okada - 通讯作者:
Yoshitaka Okada
Joan Redwing的其他文献
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{{ truncateString('Joan Redwing', 18)}}的其他基金
Participant Support for the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23); Tucson, Arizona; 13-18 August 2023
第 23 届美国晶体生长和外延会议 (ACCGE-23) 的参与者支持;
- 批准号:
2333144 - 财政年份:2023
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
MIP: 2D Crystal Consortium (MIP-2DCC)
MIP:2D 晶体联盟 (MIP-2DCC)
- 批准号:
2039351 - 财政年份:2021
- 资助金额:
$ 0.7万 - 项目类别:
Cooperative Agreement
EAGER Collaborative Research: Fundamentals of Tunneling, Heterojunction-based 2D-Hot Electron Transistors
EAGER 协作研究:隧道、异质结二维热电子晶体管的基础知识
- 批准号:
2029729 - 财政年份:2020
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
2019 17th International Summer School on Crystal Growth (ISSCG-17)(Granby, Colorado)
2019年第十七届晶体生长国际暑期学校(ISSCG-17)(科罗拉多州格兰比)
- 批准号:
1917552 - 财政年份:2019
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
Graphene Encapsulated Growth of 2D Materials
石墨烯封装的二维材料生长
- 批准号:
1808900 - 财政年份:2018
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
NSF EFRI-2DARE, DMREF-2D and MIP Grantees Meeting to be held in November 13-15, 2017 in State College, PA
NSF EFRI-2DARE、DMREF-2D 和 MIP 受资助者会议将于 2017 年 11 月 13 日至 15 日在宾夕法尼亚州州立学院举行
- 批准号:
1748382 - 财政年份:2017
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
MIP: 2D Crystal Consortium (MIP-2DCC)
MIP:2D 晶体联盟 (MIP-2DCC)
- 批准号:
1539916 - 财政年份:2016
- 资助金额:
$ 0.7万 - 项目类别:
Cooperative Agreement
PFI:AIR - TT: One-Step Process for High Efficiency Textured Solar Cells
PFI:AIR - TT:高效纹理太阳能电池的一步工艺
- 批准号:
1414236 - 财政年份:2014
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
GOALI: Strained Layer Heterostructures for GaN-on-Si Epitaxy
目标:用于 GaN-on-Si 外延的应变层异质结构
- 批准号:
1410765 - 财政年份:2014
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
EFRI 2-DARE: 2D Crystals formed by Activated Atomic Layer Deposition
EFRI 2-DARE:通过活化原子层沉积形成的 2D 晶体
- 批准号:
1433378 - 财政年份:2014
- 资助金额:
$ 0.7万 - 项目类别:
Standard Grant
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