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NSF EFRI-2DARE, DMREF-2D and MIP Grantees Meeting to be held in November 13-15, 2017 in State College, PA

NSF EFRI-2DARE, DMREF-2D and MIP Grantees Meeting to be held in November 13-15, 2017 in State College, PA
NSF EFRI-2DARE、DMREF-2D 和 MIP 受资助者会议将于 2017 年 11 月 13 日至 15 日在宾夕法尼亚州州立学院举行
批准号:
1748382
负责人:
Joan Redwing
金额:
$4.98万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2017
资助国家:
美国
项目状态:
已结题
起止时间:
2017-08-15 至 2018-07-31
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中文摘要
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英文摘要
The proposed project will bring together researchers in a workshop to be held in November 13-15, 2017 at the Days Inn Penn State in State College, PA. The Workshop will address research areas of a wide range of non-graphene 2D atomic layers such as hexagonal boron nitride (h-BN), transition metal di-chalcogenides, tertiary compounds of carbo-nitrides and complex oxides, as well as their applications in various devices. The Workshop will bring the NSF EFRI Two- Dimensional Atomic-Layer Research and Engineering (2-DARE) supported researchers together with those supported by the Designing Materials to Revolutionize and Engineer our Future (DMREF) and Materials Innovation Platform (MIP) programs. By bringing together researchers to discuss cutting-edge research in the above areas the Workshop will catalyze important collaborations. It will also impact training of a globally engaged workforce which will help promoting science and engineering breakthroughs. Graduate students, postdoctoral scholars and junior faculty will comprise a significant portion of the attendees and will benefit from exposure to cutting-edge research in 2D materials and devices and the application of theory/simulation/data analytics to materials discovery.
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会议论文
Participant Support for the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23); Tucson, Arizona; 13-18 August 2023
MIP: 2D Crystal Consortium (MIP-2DCC)
Participation Support for Students to Attend the 22nd American Conference on Crystal Growth and Epitaxy, Virtual, August 2-4, 2021
EAGER Collaborative Research: Fundamentals of Tunneling, Heterojunction-based 2D-Hot Electron Transistors
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