PFI:AIR - TT: One-Step Process for High Efficiency Textured Solar Cells
PFI:AIR - TT: One-Step Process for High Efficiency Textured Solar Cells
批准号:
1414236
负责人:
Joan Redwing
金额:
$20.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2014
资助国家:
美国
项目状态:
已结题
起止时间:
2014-07-01 至 2017-07-31
中文摘要
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英文摘要
This PFI: AIR Technology Translation project focuses on translating a research discovery on the use of aluminum for silicon surface texturing to fill the need for lower cost fabrication methods for silicon solar cells. The project will result in a prototype of a nanotextured silicon solar cell based on a one-step fabrication process. The one-step fabrication process is important because it addresses the need to develop sustainable, low cost solar manufacturing technology while maintaining high energy conversion efficiency. It has the following unique features: it uses aluminum in a dual role to form a p-n junction in crystalline silicon while simultaneously texturizing the silicon surface to reduce reflective losses; it reduces the number of processing steps required for solar cell fabrication, and it is based on earth abundant materials. These features provide several advantages including reduced process complexity, improved sustainability, and reduced cost when compared to the leading competing process which uses gold and silver to etch the silicon surface to fabricate nanotextured solar cells in this market space. The project engages Bandgap Engineering Inc., a leading developer of silicon nanowire solar cells, to provide device testing and evaluation capabilities, assist with cost model development and guide commercialization aspects in this technology translation effort from research discovery toward commercial reality. This project addresses the following technology gaps as it translates from research discovery toward commercial application. It will investigate the use of an aluminum thin film to simultaneously serve as the p-type diffusion source for junction formation and as a catalyst to mediate nanotexturing to form an anti-reflection layer on the surface. The effect of texturing morphology, i.e. nanowire versus nanocone, on the optical and photovoltaic properties of the devices will be studied. Methods to passivate the nanotextured surface will be developed to reduce efficiency losses resulting from surface recombination. A comprehensive cost model of the process will be developed to guide commercialization plans. The overall goal of the project is the development of a prototype solar cell based on the one-step process that exhibits a power conversion efficiency comparable to or higher than state-of-the-art nanotextured solar cells fabricated using gold/silver-induced etching. The potential economic impact is expected to be a reduction in the cost per Watt of crystalline silicon solar cells over the next decade, which will contribute to the U.S. competitiveness in renewable energy.
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Participant Support for the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23); Tucson, Arizona; 13-18 August 2023
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批准号:2333144
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项目类别:Standard Grant
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资助金额:$0.7万
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财政年份:2023
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负责人:Joan Redwing
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依托单位:
MIP: 2D Crystal Consortium (MIP-2DCC)
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批准号:2039351
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项目类别:Cooperative Agreement
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资助金额:$2010.0万
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财政年份:2021
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负责人:Joan Redwing
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依托单位:
Participation Support for Students to Attend the 22nd American Conference on Crystal Growth and Epitaxy, Virtual, August 2-4, 2021
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批准号:2138270
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项目类别:Standard Grant
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资助金额:$0.7万
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财政年份:2021
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负责人:Joan Redwing
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依托单位:
EAGER Collaborative Research: Fundamentals of Tunneling, Heterojunction-based 2D-Hot Electron Transistors
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批准号:2029729
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项目类别:Standard Grant
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资助金额:$6.54万
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财政年份:2020
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负责人:Joan Redwing
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依托单位:
2019 17th International Summer School on Crystal Growth (ISSCG-17)(Granby, Colorado)
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批准号:1917552
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项目类别:Standard Grant
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资助金额:$3.0万
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财政年份:2019
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负责人:Joan Redwing
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依托单位:
Graphene Encapsulated Growth of 2D Materials
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批准号:1808900
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项目类别:Standard Grant
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资助金额:$43.0万
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财政年份:2018
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负责人:Joan Redwing
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依托单位:
NSF EFRI-2DARE, DMREF-2D and MIP Grantees Meeting to be held in November 13-15, 2017 in State College, PA
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批准号:1748382
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项目类别:Standard Grant
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资助金额:$4.98万
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财政年份:2017
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负责人:Joan Redwing
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依托单位:
MIP: 2D Crystal Consortium (MIP-2DCC)
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批准号:1539916
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项目类别:Cooperative Agreement
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资助金额:$1778.76万
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财政年份:2016
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负责人:Joan Redwing
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依托单位:
GOALI: Strained Layer Heterostructures for GaN-on-Si Epitaxy
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批准号:1410765
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项目类别:Standard Grant
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资助金额:$39.0万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
EFRI 2-DARE: 2D Crystals formed by Activated Atomic Layer Deposition
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批准号:1433378
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项目类别:Standard Grant
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资助金额:$196.45万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
Film Stress and Morphology Evolution during MOCVD Growth of InGaN
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批准号:1006763
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项目类别:Continuing Grant
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资助金额:$38.8万
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财政年份:2010
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负责人:Joan Redwing
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依托单位:
Stress Evolution during Group III-Nitride Heteroepitaxy
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批准号:0606451
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项目类别:Standard Grant
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资助金额:$38.14万
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财政年份:2006
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负责人:Joan Redwing
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依托单位:
NIRT: Semiconductor Nanowire Electronics
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批准号:0609282
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项目类别:Standard Grant
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资助金额:$100.0万
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财政年份:2006
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负责人:Joan Redwing
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依托单位:
NIRT: Semiconductor Nanowires: Building Blocks for Nanoscale Electronics
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批准号:0103068
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项目类别:Continuing Grant
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资助金额:$145.0万
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财政年份:2001
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负责人:Joan Redwing
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依托单位:
CAREER: Development of Strain-Engineered AlGalnN Heterostructures for Electronic Device Applications
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批准号:0093742
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2001
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负责人:Joan Redwing
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依托单位:
Acquisition of an MOVPE System for Electronic Materials Research and Education
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批准号:0076312
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项目类别:Standard Grant
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资助金额:$15.0万
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财政年份:2000
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负责人:Joan Redwing
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依托单位:
SBIR PHASE I: SiC on Insulator for High Frequency Devices
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批准号:9561370
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项目类别:Standard Grant
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资助金额:$7.5万
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财政年份:1996
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负责人:Joan Redwing
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依托单位:
国内基金
海外基金
湍流和化学交互作用对H2-Air-H2O微混燃烧中NO生成的影响研究
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批准号:51976048
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项目类别:面上项目
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资助金额:61.0万元
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批准年份:2019
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负责人:邱朋华
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依托单位: