E2CDA: Type I: Collaborative Research: A Fast 70mV Transistor Technology for Ultra-Low-Energy Computing
E2CDA: Type I: Collaborative Research: A Fast 70mV Transistor Technology for Ultra-Low-Energy Computing
批准号:
1640030
负责人:
Mark Rodwell
金额:
$206.55万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2016
资助国家:
美国
项目状态:
已结题
起止时间:
2016-10-01 至 2021-09-30
中文摘要
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英文摘要
Microprocessors containing billions of transistor switches are at the heart of PCs, cell phones, computer servers answering our internet searches, and supercomputers modeling the weather and designing new drugs and aircraft. Modern machinery is controlled by microprocessors; a typical car uses 50. After 50 years of rapid improvement, since 2000 progress has stalled, primarily because the transistors consume too much energy when they switch. As transistors are made smaller, more fit on a chip, and the energy consumed increases. The battery is drained quickly and chip becomes hot. Slowing the switching reduces heating, but then the software runs slowly. In this program, a new transistor design will be investigated. If successful, these transistors will consume 100 times less switching energy, allowing faster, more powerful chips. The challenge is the power supply voltage; reducing the voltage by 2:1 reduces the switching energy 4:1. Between ~1990-2005, voltages were reduced from 5 to 1 Volt. Unfortunately, with normal (MOS) transistor switches, below ~0.7 Volts the transistor's switching becomes imperfect, with the transistor not turning completely off. This finite off-state leakage current increases energy consumption, hence it has not been possible to supplies much below 0.7 Volts. Ten years ago, tunnel transistors were proposed, as these can turn off nearly completely even at supplies as low as 0.3 Volts. Unfortunately, tunnel transistors do not turn on well, and microprocessors using them will therefore operate slowly. This limitation becomes much worse if the supply is dropped to 0.1 Volts. This program will research a new design, the triple-heterojunction tunnel transistor. This has added semiconductor junction layers which increased the on-current by as much as 100:1. If successful, rapidly-switching microprocessors will be feasible with even a 0.07V supply, and would consume as little as 1% of the energy of today's technology.
期刊论文(5)
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DOI:
10.1063/5.0050802
发表时间:
2021-08
期刊:
Journal of Applied Physics
影响因子:
3.2
作者:
[A. Goswami;B. Markman;S. Brunelli;S. Chatterjee;J. Klamkin;M. Rodwell;C. Palmstrøm]
通讯作者:
A. Goswami;B. Markman;S. Brunelli;S. Chatterjee;J. Klamkin;M. Rodwell;C. Palmstrøm
Towards Horizontal Heterojunctions for Tunnel Field Effect Transistors with Template Assisted Selective Epitaxy via MOCVD
通过 MOCVD 进行模板辅助选择性外延,实现隧道场效应晶体管的水平异质结
DOI:
--
发表时间:
2018
期刊:
International conference on MOVPE
影响因子:
--
作者:
[Brunelli, Simone, Markman, B, Tseng, HY, Goswami, A, Rodwell, M, Palmstrøm, P, Klamkin, K]
通讯作者:
Klamkin, K
Atomic layer deposition of TiN/Ru gate in InP MOSFETs
InP MOSFET 中 TiN/Ru 栅极的原子层沉积
DOI:
10.1063/5.0058825
发表时间:
2021
期刊:
Applied Physics Letters
影响因子:
4
作者:
[Tseng, Hsin-Ying, Fang, Yihao, Mitchell, William James, Taylor, Aidan Arthur, Rodwell, Mark J.]
通讯作者:
Rodwell, Mark J.
InP MOSFETs Exhibiting Record 70 mV/dec Subthreshold Swing
InP MOSFET 呈现创纪录的 70 mV/dec 亚阈值摆幅
DOI:
--
发表时间:
2019
期刊:
2019 IEEE Device Research Conference
影响因子:
--
作者:
[Tseng, Hsin-Ying, Fang, Yihao, Zhong, Shibo, Rodwell, Mark]
通讯作者:
Rodwell, Mark
Collaborative Research: nm Electron Wave Devices for Low-Power VLSI Electronics
-
批准号:1509288
-
项目类别:Standard Grant
-
资助金额:$18.0万
-
财政年份:2015
-
负责人:Mark Rodwell
-
依托单位:
NEB: Superlattice-FETs, Gamma-L-FETs, and Tunnel-FETs: Materials, Devices and Circuits for Fast Ultra-Lower-Power ICs
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批准号:1125017
-
项目类别:Standard Grant
-
资助金额:$128.0万
-
财政年份:2011
-
负责人:Mark Rodwell
-
依托单位:
Presidential Young Investigators Award: Picosecond Electronic Circuits
-
批准号:8958327
-
项目类别:Continuing Grant
-
资助金额:$24.74万
-
财政年份:1989
-
负责人:Mark Rodwell
-
依托单位:
国内基金
海外基金
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