Successive agglomeration of Cu atoms in Si: The early stages of TM precipitation.

Cu 原子在 Si 中的成功团聚：TM 沉淀的早期阶段。

• 批准号: 339748793
• 负责人: Professor Dr. Jörg Weber
• 金额: --
• 依托单位: Institut für Angewandte Physik (IAP)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2017
• 资助国家: 德国
• 起止时间: 2016-12-31 至 2020-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/339748793?language=en
• 关键词: Successive; agglomeration; Cu; atoms; Si

The general purpose of this project is to gain insight in the early phases of Cu precipitate formation at low temperatures through the detection of the growth of Cu complexes from substitutional Cu (CuS) and interstitial Cu (Cui) (CuSnCui) in n- and p-type Si. Cu is introduced into the Si samples by chemo mechanical polishing or wet chemical etching. The formation of small Cu complexes is followed by Deep Level Spectroscopy. The project will lead to a better knowledge of precipitate formation at low temperatures and will help to find better gettering mechanism to prevent failures of devices. The proposed seeded growth process of highly conducting Cu precipitates in the bulk of the Si wafer would open new ways of interconnects.

该项目的总体目的是通过检测n型和p型Si中置换Cu（CuS）和填隙Cu（CuI）（CuSnCuI）的Cu络合物的生长来深入了解低温下Cu沉淀形成的早期阶段。通过化学机械抛光或湿法化学腐蚀将Cu引入到Si样品中。小的Cu络合物的形成之后是深能级光谱。该项目将导致更好地了解低温下沉淀物的形成，并将有助于找到更好的吸杂机制，以防止设备故障。所提出的高导电性Cu沉淀物在硅晶片中的籽晶生长工艺将开辟互连的新途径。

项目成果

Nickel in silicon: Room‐temperature in‐diffusion and interaction with radiation defects

硅中的镍：室温扩散以及与辐射缺陷的相互作用

• DOI: 10.1002/pssc.201700005
• 发表时间: 2017
• 期刊: Physica Status Solidi (c)
• 作者: N. Yarykin;J. Weber
• 通讯作者: J. Weber

Nickel Interaction with Vacancy‐Type Radiation Defects in Silicon

镍与硅中空位型辐射缺陷的相互作用

• DOI: 10.1002/pssr.201800651
• 发表时间: 2019
• 期刊: physica status solidi (RRL) – Rapid Research Letters
• 作者: N. Yarykin;S. Lastovskii;J. Weber
• 通讯作者: J. Weber

Deep level centers in electron‐irradiated silicon crystals doped with copper at different temperatures

不同温度下电子辐照的铜掺杂硅晶体的深能级中心

• DOI: 10.1002/pssc.201600267
• 发表时间: 2017
• 期刊: Physica Status Solidi (c)
• 作者: N. Yarykin;J. Weber
• 通讯作者: J. Weber

Electrically Active Copper–Nickel Complexes in p‐Type Silicon

pâ型硅中的电活性铜镍配合物

• DOI: 10.1002/pssa.201900304
• 发表时间: 2019
• 期刊: physica status solidi (a)
• 作者: N. Yarykin;J. Weber
• 通讯作者: J. Weber

Platinum–Copper Defects in Silicon

硅中的铂铜缺陷

• DOI: 10.1002/pssa.201900311
• 发表时间: 2019
• 期刊: physica status solidi (a)
• 作者: V. Kolkovsky;V. Kolkovsky;J. Weber
• 通讯作者: J. Weber