Successive agglomeration of Cu atoms in Si: The early stages of TM precipitation.

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The general purpose of this project is to gain insight in the early phases of Cu precipitate formation at low temperatures through the detection of the growth of Cu complexes from substitutional Cu (CuS) and interstitial Cu (Cui) (CuSnCui) in n- and p-type Si. Cu is introduced into the Si samples by chemo mechanical polishing or wet chemical etching. The formation of small Cu complexes is followed by Deep Level Spectroscopy. The project will lead to a better knowledge of precipitate formation at low temperatures and will help to find better gettering mechanism to prevent failures of devices. The proposed seeded growth process of highly conducting Cu precipitates in the bulk of the Si wafer would open new ways of interconnects.