Coupling of quantum dots with superconductors- towards long-range coupling of qubits
Coupling of quantum dots with superconductors- towards long-range coupling of qubits
批准号:
387743155
负责人:
Professor Dr. Joachim Knoch
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2017
资助国家:
德国
项目状态:
已结题
起止时间:
2016-12-31 至 2021-12-31
中文摘要
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英文摘要
Coupling spin qubits in quantum dots over a long distance is one of the big remaining challenges, when it comes to realizing large scale quantum computer systems. So far only neighbouring quantum dot systems were coupled directly by electrostatic means using control gate electrodes. The goal of this project is to explore the possibility of a long-range coupling of quantum dot spin qubits using superconducting electrodes. Since this approach is rather unexplored up to now, mainly fundamental questions concerning the feasibility of this concept will be addressed within the project. Two different mechanisms are employed for the coupling: The first is based on the virtual exchange of an electron between two quantum dots via a superconducting bridge by means of excited quasiparticles above the superconducting band gap. As has been recently shown, for a proper coupling over distances larger than the coherence length of the superconductor a hard superconducting gap and a moderate coupling between quantum dot and superconductor is necessary. As a second method we will also study the coupling based on crossed Andreev reflection. Here, one electron from each quantum dot tunnels into the superconductor and combines to a Cooper pair before it tunnels back. In this case the expected coupling length would be in the order of the superconducting coherence length, thus much smaller than in the previous case. The present proposal is devoted to an experimental investigation of the coupling of quantum dots realized in III-V semiconductors as well as in silicon. The approach based on III-V semiconductors enables to cover the full range of coupling strengths due to an in-situ fabrication process and thus allows assessing and evaluating both regimes, i.e. coupling via excited quasiparticles as well as crossed Andreev reflection. The Si-approach, on the other hand, allows assessing the suitability of the long-range coupling with superconductors within the most mature material system that has recently regained a strong and increasing interest for qubit circuits. A successful demonstration of a coupling of quantum dots over longer distances would be of great benefit for the long-range coupling of qubits and thus of a major step forward towards a realization of a scalable quantum information processor.
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Role of electron and ion irradiation in a reliable lift-off process with e-beam evaporation and a bilayer PMMA resist system
电子和离子辐照在电子束蒸发和双层 PMMA 抗蚀剂系统可靠剥离过程中的作用
DOI:
10.1116/6.0001161
发表时间:
2021
期刊:
影响因子:
--
作者:
[B. Sun, T. Grap, T. Frahm, S. Scholz, J. Knoch]
通讯作者:
J. Knoch
DOI:
10.3390/app9183823
发表时间:
2019-09-01
期刊:
APPLIED SCIENCES-BASEL
影响因子:
2.7
作者:
[Klos, J., Sun, B., Schreiber, L. R.]
通讯作者:
Schreiber, L. R.
DOI:
10.1109/ted.2021.3081527
发表时间:
2021-07-01
期刊:
IEEE TRANSACTIONS ON ELECTRON DEVICES
影响因子:
3.1
作者:
[Sun, Bin, Richstein, Benjamin, Knoch, Joachim]
通讯作者:
Knoch, Joachim
Modeling and Prediction of Hydrogen-Assisted Morphological Evolution in Silicon Utilizing a Level-Set Approach
利用水平集方法对硅中氢辅助形态演化进行建模和预测
DOI:
10.1109/jmems.2021.3115715
发表时间:
2021
期刊:
Journal of Microelectromechanical Systems
影响因子:
2.7
作者:
[B. Sun, S. Scholz, A. Kemper, T. Grap, J. Knoch]
通讯作者:
J. Knoch
High yield, low variability – Employing silicon CMOS technology for the realization of spin qubits
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批准号:421769186
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2019
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负责人:Professor Dr. Joachim Knoch
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依托单位:
Reconfigurable Field-Effect-Transistors
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资助金额:$0.0万
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负责人:Professor Dr. Joachim Knoch
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依托单位:
1-D Multi-Gate FETs: Tailoring the Potential Landscape on the Nanoscale
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财政年份:2015
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依托单位:
Strained Graphene Field-Effect Transistor - Nano-electro-mechanical transistors for low power applications and locally adjustable electronic properties
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批准号:242588083
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项目类别:Priority Programmes
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资助金额:$0.0万
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财政年份:2013
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负责人:Professor Dr. Joachim Knoch
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依托单位:
Elektrostatisch dotierte, laterale Source/Drain Kontakte in Nanodraht Tunnel Feld-Effekt Transistoren
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批准号:183625203
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项目类别:Research Grants
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资助金额:$0.0万
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财政年份:2010
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负责人:Professor Dr. Joachim Knoch
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依托单位:
Experimental and theoretical investigations of mono- and bilayer graphene nanoribbon band-to-band tunneling field-effect transistors
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批准号:172597456
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项目类别:Priority Programmes
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资助金额:$0.0万
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财政年份:2010
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负责人:Professor Dr. Joachim Knoch
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依托单位:
Entwicklung einer Technologie für die Herstellung eines High-Electron-Mobility Transistors
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批准号:5338108
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项目类别:Research Fellowships
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资助金额:$0.0万
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财政年份:2001
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负责人:Professor Dr. Joachim Knoch
-
依托单位:
Cryogenic Complementary Metal-Oxide-Semiconductor Technology for the Realization of Classical QuBit-Control Circuits
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批准号:422581876
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项目类别:Research Grants
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资助金额:$0.0万
-
财政年份:--
-
负责人:Professor Dr. Joachim Knoch
-
依托单位:
国内基金
海外基金
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Research on Quantum Field Theory without a Lagrangian Description
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批准号:24ZR1403900
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批准年份:2024
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负责人:SATOSHI NAWATA
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依托单位:
Simulation and certification of the ground state of many-body systems on quantum simulators
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Mapping Quantum Chromodynamics by Nuclear Collisions at High and Moderate Energies
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