1-D Multi-Gate FETs: Tailoring the Potential Landscape on the Nanoscale

一维多栅极 FET：定制纳米尺度的潜在前景

• 批准号: 266030637
• 负责人: Professor Dr. Joachim Knoch
• 金额: --
• 依托单位: Institut für Halbleitertechnik (IHT)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2015
• 资助国家: 德国
• 起止时间: 2014-12-31 至 2016-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/266030637?language=en
• 关键词: Multi; Gate; FETs; Tailoring; Potential

One-dimensional (1-D) materials such as nanowires and nanotubes have attracted a great deal of attention recently as buildings blocks of future nanoelectronics systems. This interest is in part due to the small geometry that allows realizing optimum scalability of the devices due to the strong electrostatic gate control in e.g. wrap-gate device structures. In addition, nanowires/tubes enable one-dimensional electronic transport that has a number of benefits such as a rather long mean free path for scattering or the highly linear transfer characteristics. Furthermore, the combination of 1-D transport and excellent gate control enables a tight control over the potential distribution within the device. While it is common practice to use gates in order to manipulate the potential profile of transistor device based on novel materials so far only a small number of gates has been used and these gates exhibit a length on the order of several tens to hundreds of nanometers and/or are placed far apart from each other prohibiting a manipulation of the potential profile on the nanoscale. The aim of the present proposal is to realize a 1-D multi-gate device architecture where a large number of gates (on the order of 10 and more) with lengths in the few nanometer range will be placed next to each other with a few nanometers inter-gate distances. This device layout allows tailoring the conduction/valence band profile along the device on the nanoscale due to the excellent gate control in 1-D nanostructures; hence this band tailoring allows studying the full potential of 1-D structures for nanoelectronics. Two different demonstrations will be pursued within the project: First, a gate-induced superlattice structure will be realized in e.g. carbon nanotubes and/or InAs nanowires. With appropriate dimensions this superlattice will serve as an energy filter enabling a so-called steep slope transistor that operates at very low supply voltages and hence facilitates ultra-low power nanoelectronics systems. Second, we will adjust the band profile along the channel in order to maximize the linearity of the transfer characteristics of the 1-D device.

一维（1-D）材料，如纳米线和纳米管，作为未来纳米电子系统的基石，最近引起了人们的广泛关注。这种兴趣部分是由于小的几何形状，允许实现器件的最佳可扩展性，因为在例如包栅器件结构中具有强大的静电栅极控制。此外，纳米线/管能够实现一维电子输运，具有许多优点，例如散射的平均自由程较长或高度线性的转移特性。此外，1-D传输和出色的栅极控制的结合可以严格控制器件内的电位分布。虽然使用栅极来操纵基于新材料的晶体管器件的电位分布是常见的做法，但到目前为止，只有少数栅极被使用，这些栅极的长度在几十到几百纳米之间，并且/或者放置得很远，禁止在纳米尺度上操纵电位分布。本提案的目的是实现一种一维多栅极器件架构，其中大量长度在几纳米范围内的栅极（数量级为10或更多）将以几纳米的栅极间距相邻放置。由于在一维纳米结构中具有出色的栅极控制，这种器件布局允许在纳米尺度上沿器件定制导价带剖面；因此，这种条带剪裁使得研究纳米电子学的一维结构的全部潜力成为可能。该项目将进行两种不同的演示：首先，栅极诱导超晶格结构将在碳纳米管和/或InAs纳米线中实现。如果尺寸合适，这种超晶格将用作能量滤波器，使所谓的陡坡晶体管能够在极低的供电电压下工作，从而促进超低功耗纳米电子系统的发展。其次，我们将沿着通道调整带轮廓，以最大限度地提高1-D器件的传输特性的线性度。

项目成果

Alternatives for Doping in Nanoscale Field‐Effect Transistors

• DOI: 10.1002/pssa.201700969
• 发表时间: 2018-04
• 期刊: physica status solidi (a)
• 作者: Felix Riederer;T. Grap;Sergej Fischer;M. Mueller;Daichi Yamaoka;Bin Sun;Charu Gupta;K. Kallis;J. Knoch