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Basic research on ultra-low voltage MOS transistors aiming at sub-100mV operation

Basic research on ultra-low voltage MOS transistors aiming at sub-100mV operation
针对亚100mV运行的超低压MOS晶体管基础研究
批准号：
25630135
负责人：
HIRAMOTO Toshiro
金额：
$2.58万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Challenging Exploratory Research
财政年份：
2013
资助国家：
日本
项目状态：
已结题
起止时间：
2013-04-01 至 2014-03-31
来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-25630135/
关键词：
電子デバイス・集積回路超低エネルギー半導体物性MOSトランジスタ大規模集積回路超低消費電力サブスレッショルド電子デバイス・機器低消費電力

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中文摘要
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英文摘要
The objective of this research is to develop a semiconductor device operating at as low as 100mV. In order to obtain high on/off ratio at low voltage, a MOS transistor with a floating gate is proposed, where threshold voltage (Vth) automatically decreases in the ON state while Vth increases in the OFF state. The device was actually fabricated, and the decrease in Vth in the ON state and the increase in Vth in the OFF stage was demonstrated at as low as 100mV. It was also demonstrated that the stability of an SRAM cell was improved at 100mV.
期刊论文(2)
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会议论文
Ultra-low voltage (0.1V) operation of Vth self-adjusting MOSFET and SRAM cell
DOI： 10.1109/vlsit.2014.6894416
发表时间： 2014-06
期刊： 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers
影响因子： --
作者： [A. Ueda;Seungmin Jung;T. Mizutani;Ashok Kumar;T. Saraya;T. Hiramoto]
通讯作者： A. Ueda;Seungmin Jung;T. Mizutani;Ashok Kumar;T. Saraya;T. Hiramoto
Basic research on influence of single impurity atom on statistics of nanoscale transistor characteristics
  • 批准号：
    26630148
  • 项目类别：
    Grant-in-Aid for Challenging Exploratory Research
  • 资助金额：
    $2.5万
  • 财政年份：
    2014
  • 负责人：
    HIRAMOTO Toshiro
  • 依托单位：
    The University of Tokyo
Nano MOSFET Fluctuations and Device Integrity
  • 批准号：
    18063006
  • 项目类别：
    Grant-in-Aid for Scientific Research on Priority Areas
  • 资助金额：
    $32.77万
  • 财政年份：
    2006
  • 负责人：
    HIRAMOTO Toshiro
  • 依托单位：
    The University of Tokyo
A research on silicon nano-devices for single-electron, quantum, CMOS integrated circuits operating at room temperature
  • 批准号：
    16201029
  • 项目类别：
    Grant-in-Aid for Scientific Research (A)
  • 资助金额：
    $31.7万
  • 财政年份：
    2004
  • 负责人：
    HIRAMOTO Toshiro
  • 依托单位：
    The University of Tokyo
Exploration of Physics and Integration of Nano-Scale MOSEFET with Suppressed Fluctuations
  • 批准号：
    13450135
  • 项目类别：
    Grant-in-Aid for Scientific Research (B)
  • 资助金额：
    $9.47万
  • 财政年份：
    2001
  • 负责人：
    HIRAMOTO Toshiro
  • 依托单位：
    The University of Tokyo
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