Fluctuations of Characteristics in Sub-0.1mum Thin Film SOI CMOS LSI Devices

0.1微米以下薄膜SOI CMOS LSI器件的特性波动

• 批准号: 07555109
• 负责人: HIRAMOTO Toshiro
• 金额: $ 6.78万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555109/
• 关键词: Thin Film SOI MOSFET; Fluctuations; Threshold Voltage; MOSFET; Fully Depleted SOI devices; Stochastic Fluctuations of Dopant Atoms; VLSI devices; SOI; SIMOX; 0.1ミクロンMOSFET; 揺らぎ; LSIデバイス; 不純物揺らぎ; 薄膜SOI MOS; デバイスシミュレーション; 薄膜SOIMOS

Thin film SOI CMOS Devices have attracted much attention for future LSI devices. When the devices are scaled down to sub-0.1mum regime, fluctuation problems are dominant. The purpose of this study is to investigate the fluctuations of the device characteristics in sub-0.1 mum SOI MOSFET and to propose a new technique to compensate these fluctuations. We have fabricated the thin film SOI MOSFET.The fluctuation problems are addressed by both experimental measurements and simulation. First, the relation between the SOI thickness fluctuations and threshold voltage fluctuations are discussed. It is elucidated that the threshold voltage fluctuations become larger when the gate width is smaller than the period of the SOI thickness fluctuations. This result suggests that the SOI DRAMs which have very narrow gate width will have the fluctuation problem in the future. Next, the scaling methodology for SOI device is developed and the stochastic fluctuations of dopant atoms in SOI channel is discussed based on the scaling theory. It is concluded that the thin film SOI devices can be scaled down without the increase in impurity concentration and that the fluctuations of device characteristics due to the stochastic fluctuations are much smaller in SOI device than in bulk devices.

薄膜SOI CMOS设备引起了对未来LSI设备的广泛关注。当设备缩放到低于0.1MUM的状态时，波动问题是主导的。这项研究的目的是研究SUB-0.1 MUM SOI MOSFET中设备特性的波动，并提出了一种补偿这些波动的新技术。我们已经制造了薄膜SOI MOSFET。通过实验测量和模拟解决了波动问题。首先，讨论了SOI厚度波动与阈值电压波动之间的关系。阐明的是，当栅极宽度小于SOI厚度波动的周期时，阈值电压波动变得更大。该结果表明，将来有非常狭窄的栅极宽度的SOI DRAM将在未来存在波动问题。接下来，开发了SOI设备的缩放方法，并根据缩放理论讨论了SOI通道中掺杂原子的随机波动。得出的结论是，薄膜SOI设备可以缩放而不会增加杂质浓度，并且SOI设备中随机波动引起的设备特性的波动比在散装设备中小得多。

项目成果

T. Hiramoto: "Characterization of Precisely Widthy-Controlled Si Quantum Wires Fabricated on SOI Substrates" Abstracts of 3rd International Symposium on New Phenomena in Mesoscoopic Structures, Maui, Hawaii. 296-299 (1995)

T. Hiramoto：“在 SOI 衬底上制造的精确宽度控制的硅量子线的表征”第三届介观结构新现象国际研讨会摘要，夏威夷毛伊岛。

更屋 拓哉: "0.15μm部分空乏型SOI MOSFETにおける1V以下での基板浮遊効果" 生産研究. 49,4. 231-234 (1997)

Takuy​​a Saraya：“0.15μm 部分耗尽 SOI MOSFET 中低于 1V 的衬底浮动效应”生产研究 49,4 (1997)。

H. Ishikuro: "Trasconductance Oscillations in a very narrow, short channel MOSFET with a split-gate fabricated on an SOT substrate" Abstracts of International Workshop on Mesoscoplc Physics and Electronics, Tokyo. 82-83 (1995)

H. Ishikuro：“在 SOT 基板上制造的带有分栅的极窄短沟道 MOSFET 中的跨导振荡”，东京介观物理与电子国际研讨会摘要。

石黒仁揮: "スプリットゲートによる極微細SOI-MOSにおけるコンダクタンス振動現象" 生産研究. 47. 32-35 (1995)

Jinki Ishiguro：“带分裂栅极的超细 SOI-MOS 中的电导振荡现象”生产研究 47. 32-35 (1995)。

Makoto Takamiya: "Deep Sub-0.1 mum Fully Depleted SOI MOSFET's with Ultra-Thin Silicon Film and Thick Buried Oxide for Low-Power Applications" Proceedings of 1997 International Semiconductor Device Research Symposium. 215-218 (1997)

Makoto Takamiya：“用于低功耗应用的采用超薄硅膜和厚埋氧化物的深亚 0.1 微米全耗尽型 SOI MOSFET”，1997 年国际半导体器件研究研讨会论文集。