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Fluctuations of Characteristics in Sub-0.1mum Thin Film SOI CMOS LSI Devices

0.1微米以下薄膜SOI CMOS LSI器件的特性波动

基本信息

批准号：
07555109
负责人：
HIRAMOTO Toshiro
金额：
$ 6.78万
依托单位：
University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07555109/
关键词：
Thin Film SOI MOSFET Fluctuations Threshold Voltage MOSFET Fully Depleted SOI devices Stochastic Fluctuations of Dopant Atoms VLSI devices SOI SIMOX 0.1ミクロンMOSFET 揺らぎ LSIデバイス不純物揺らぎ薄膜SOI MOS デバイスシミュレーション薄膜SOIMOS

项目摘要

Thin film SOI CMOS Devices have attracted much attention for future LSI devices. When the devices are scaled down to sub-0.1mum regime, fluctuation problems are dominant. The purpose of this study is to investigate the fluctuations of the device characteristics in sub-0.1 mum SOI MOSFET and to propose a new technique to compensate these fluctuations. We have fabricated the thin film SOI MOSFET.The fluctuation problems are addressed by both experimental measurements and simulation. First, the relation between the SOI thickness fluctuations and threshold voltage fluctuations are discussed. It is elucidated that the threshold voltage fluctuations become larger when the gate width is smaller than the period of the SOI thickness fluctuations. This result suggests that the SOI DRAMs which have very narrow gate width will have the fluctuation problem in the future. Next, the scaling methodology for SOI device is developed and the stochastic fluctuations of dopant atoms in SOI channel is discussed based on the scaling theory. It is concluded that the thin film SOI devices can be scaled down without the increase in impurity concentration and that the fluctuations of device characteristics due to the stochastic fluctuations are much smaller in SOI device than in bulk devices.

薄膜SOI CMOS器件在未来的大规模集成电路器件中引起了人们的广泛关注。当设备按比例缩小到亚0.1mum制度，波动问题是占主导地位的。本研究的目的是探讨亚0.1微米SOI MOSFET的器件特性的波动，并提出一种新的技术来补偿这些波动。我们制作了薄膜SOI MOSFET，并通过实验测量和模拟计算解决了波动问题。首先，SOI厚度波动和阈值电压波动之间的关系进行了讨论。阐明了当栅极宽度小于SOI厚度波动的周期时，阈值电压波动变得更大。这一结果表明，具有非常窄的栅极宽度的SOI DRAM在未来将存在波动问题。其次，发展了SOI器件的定标方法，并基于定标理论讨论了SOI沟道中掺杂原子的随机涨落。结果表明，薄膜SOI器件可以在不增加杂质浓度的情况下实现尺寸的缩小，并且SOI器件中由于随机涨落引起的器件特性的波动比体器件小得多。