Study on Performance Increase and Fluctuation Suppression in Thin Film SOI MOSFET by utilizing quantum effects

利用量子效应提高薄膜SOI MOSFET性能并抑制波动的研究

• 批准号: 10555117
• 负责人: HIRAMOTO Toshiro
• 金额: $ 8.06万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-10555117/
• 关键词: SOI; MOSFET; Quantum Effects; Characteristics Fluctuations; Threshold Voltage; Quantum Confinement; Finite Element Method; Scaling; 薄膜SOI; 反転層容量; 二次元閉じこめ; 完全空乏型SOI

The purpose of this study is to increase the performance and suppress the fluctuations in scaled MOSFETs by utilizing the quantum effects. We fabricated ultra-narrow channel MOSFETS and observed the threshold voltage increase by the quantum effect, which is confirmed by the numerical simulations. In the experiments, in order to confine electrons not only vertically but also laterally, extremely narrow silicon channels are fabricated by the electron beam lithography and dry etching technique. The channel width is varied from 2nm to 100nm. The channel width is very uniform and its distribution is less than 2nm. The dependences on channel orientation and polarity of carriers are also investigated. The threshold voltane rapidly increases when the channel width is less than 10 nm both in NMOS and PMOS.In order to clarify the origin of these phenomena, the Schrodinger equations are solved by the finite element method and the electron states in narrow channels are obtained. The results show that the threshold voltage increase is caused by the quantum confinement. We refer to this effect as the quantum mechanical narrow channel effect. This effect can be utilized to suppress the fluctuations and control the threshold voltage.

本研究的目的是利用量子效应来提高MOSFET的性能并抑制其波动。我们制作了超窄沟道的半导体场效应晶体管，观察到量子效应使阈值电压增加，数值模拟证实了这一点。在实验中，为了在垂直和横向上限制电子，采用电子束光刻和干法刻蚀技术制作了极窄的硅沟道。沟道宽度从2nm到100nm变化。沟道宽度非常均匀，其分布小于2nm。还研究了沟道取向和载流子极性的依赖关系。当沟道宽度小于10 nm时，NMOS和PMOS的阈值电压迅速增加，为了解释这一现象的原因，采用有限元方法求解薛定谔方程，得到了窄沟道中的电子态.结果表明，阈值电压的增加是由量子限制引起的。我们把这种效应称为量子力学窄沟道效应。该效应可用于抑制波动并控制阈值电压。

项目成果

Toshiro Hiramoto: "Quantum Energy and Charging Energy in Point Contact MOSFETs acting as Single Electron Transistors" Superlattices and Microstructures. Vol.24,No.1/2. 237-263 (1999)

Toshiro Hiramoto：“充当单电子晶体管的点接触 MOSFET 中的量子能量和充电能量”超晶格和微结构。

Toshiro Hiramoto (Invited): "To fill the gap between Si-ULSI and nanodevices"International Journal of High Speed Electronics and Systems (IJHSES). (掲載予定). (2000)

Toshiro Hiramoto（特邀）：“填补Si-ULSI和纳米器件之间的空白”国际高速电子与系统杂志（IJHSES）（待出版）。

T.Hiramoto and H.Majima (Invited): "Characteristics of Silicon Nano-Scale Devices"Proceedings of International Conference on Simulation of Semiconductors Processes and Devices (SISPAD 2000), Seattle, USA. 179-183 (2000)

T.Hiramoto 和 H.Majima（特邀）：“硅纳米级器件的特性”半导体工艺和器件模拟国际会议 (SISPAD 2000) 论文集，美国西雅图。

Toshiro Hiramoto and Hiroki Ishikuro: "Quantum Energy and Charging Energy in Point Contact MOSFETs acting as Single Electron Transistors"Superlattices and Microstructures. Vol. 24, No. 1/2. 263-267 (1999)

Toshiro Hiramoto 和 Hiroki Ishikuro：“充当单电子晶体管的点接触 MOSFET 中的量子能量和充电能量”超晶格和微结构。

H.Majima,H.Ishikuro,and T.Hiramoto: ""Experimental Evidence for Quantum Mechanical Narrow Channel Effect in Ultra-Narrow MOSFETs""IEEE Electron Device Letters. Vol.21,No.8. 396-398 (2000)

H.Majima、H.Ishikuro 和 T.Hiramoto：“超窄 MOSFET 中量子机械窄通道效应的实验证据””IEEE 电子器件快报。