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Fabrication of Silicon Nano-Devices with High Controllability beyond Lithography Limit

超越光刻极限的高可控性硅纳米器件的制造

基本信息

批准号：
10450112
负责人：
HIRAMOTO Toshiro
金额：
$ 8.7万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1998
资助国家：
日本
起止时间：
1998 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10450112/
关键词：
MOSFET silicon nanodevice single electron Coulomb blockade SET silicon dot SOI anisotropic etching ナノデバイス特性ばらつき量子効果自己形成

项目摘要

The purpose of this study is to develop a highly controllable method for fabricating ultra-small silicon nano-devices beyond the lithography limit without using fine lithography techniques such as electron beam lithography. We have proposed a new method that makes use of anisotropic etching and multiple layers of silicon oxide and silicon nitride. Fine point contact channel was successfully fabricated by selective oxidation and two anisotropic etching steps on silicon-on-insulator (SOI) substrate. The fabricated MOSFET shows good uniformity. The distribution of drain current is less than 10%. Moreover, Coulomb blockade oscillations due to single electron tunneling are observed at low temperatures. Using this technique, the integration of single electron transistors is also performed. By combining the single electron transistor and a memory device with silicon nano-crystal floating dots, the characteristics of single electron transistors are precisely controlled and the peak positions of Coulomb blockade oscillations are adjusted to the desired positions. Then, two single electron transistors are integrated to form a directional current switch. The fabrication process and device control are very effective for the practical integration of single electron transistors.

本研究的目的是开发一种高度可控的方法，可以在不使用电子束光刻等精细光刻技术的情况下，制备超出光刻极限的超小硅纳米器件。我们提出了一种利用各向异性刻蚀和多层氧化硅和氮化硅的新方法。采用选择性氧化和两次各向异性腐蚀工艺，在绝缘体上硅(SOI)衬底上成功制备了细点接触沟道。制作的MOSFET具有良好的均匀性。漏电流分布小于10%。此外，在低温下观察到了由单电子隧穿引起的库仑阻塞振荡。利用这一技术，还实现了单电子晶体管的集成。通过将单电子晶体管和带有硅纳米晶浮点的存储器件相结合，精确地控制单电子晶体管的特性，并将库仑阻塞振荡的峰值位置调整到所需的位置。然后，将两个单电子晶体管集成在一起，形成方向电流开关。制作工艺和器件控制对于单电子晶体管的实际集成是非常有效的。