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Investigation of Oxidation Mechanisms in SOI Structures

SOI 结构氧化机制的研究

基本信息

批准号：
08455161
负责人：
HIRAMOTO Toshiro
金额：
$ 4.86万
依托单位：
University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08455161/
关键词：
SOI MOSFET Charge Pumping Oxidation Interface Traps Silicon Oxide MOS LSI 拡散 Si

项目摘要

Thin film Silicom-on-Insulator (SOI) technology has attracted much attention for high-speed and low-power device applications. Usually, the process for SOI device fabrication is compatible with conventional bulk devices. However, the SOI device has one more silicon/oxide interfaces and the mechanisms of oxidation and other process in SOI substrates are not necessarily the same as the bulk materials. The purpose of this study is to investigate the oxidation mechanisms and the interface trap characteristics in SOI structures. First, a new technique is developed to measure the interface traps in SOI using charge pumping method. The conventional charge pumping method are not applied to SOI because of high resistivity of body region. We fabricated SOI structures with body terminal. In our new method, the pulse voltage is applied not only to the gate but also the body. The body pulse suppresses the reduction of the charge pumping current and enables us to accurately measure the interface traps in SOI devices. Next, a new technique is also developed to measure the energy distribution of the interface traps in SOI using modified charge pumping method. The oxidation mechanisms and interface trap characteristics are intensively investigated by above mentioned new technique and it is suggested that the interface of SOI structure is not degraded compared with the interfaces in convensional bulk materials.

薄膜绝缘体上硅（SOI）技术在高速和低功率器件应用中引起了广泛关注。通常，用于SOI器件制造的工艺与常规体器件兼容。然而，SOI器件具有多一个硅/氧化物界面，并且SOI衬底中的氧化和其他工艺的机制不一定与体材料相同。本研究的目的是探讨SOI结构的氧化机制与界面陷阱特性。首先，开发了一种利用电荷泵方法测量SOI界面陷阱的新技术。由于SOI体区的高电阻率，传统的电荷泵方法不能应用于SOI。我们制作了带有体端的SOI结构。在我们的新方法中，脉冲电压不仅施加到栅极，而且施加到体。体脉冲抑制了电荷泵电流的降低，使我们能够准确地测量SOI器件中的界面陷阱。其次，本文还发展了一种新的测量SOI界面陷阱能量分布的方法，即改进的电荷泵法。利用上述新技术对SOI结构的氧化机理和界面陷阱特性进行了深入的研究，发现SOI结构的界面与传统体材料的界面相比没有退化。