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Fundamental Research on Quantum Microcavity Lasers

量子微腔激光器基础研究

基本信息

批准号：
03452178
负责人：
ARAKAWA Yasuhiko
金额：
$ 4.03万
依托单位：
University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

项目摘要

It is now very important to control completely both electrons and photons for future light emitters to establish systems.In this research project,we have been investigating quantum microcavity lasers in which moth electron and photons are completely controlled by using quantum wires / dots and optical microcavities.First,we investigated fabrication of the quantum wires and dots by MOCVD (Metal Organic Chemical Vapor Deposition). We have obtained GaAs quantum wires with the lateral width of less than 10nm with high quantum efficiency. The photoluminescence and magneto-photoluminescence clearly indicate the existence of the quantum wire effect. The measurement of photoluminescence decay time demonstrates correlation between exciton lifetime and the size of the quantum wire. Strained InGaAs quantum wires are also successfully fabricated. In addition,we fabricated GaAs dot structures using the similar MOCVD method. The smallest structure so far achieved is the quantum dot with the lateral dimension or 25nm. Photoluminescence is obtained from the microstructure.Secondly,microcavity effects are investigated so that the interaction between the exciton and the microcavity mode can be controlled. The measurement of reflectivity spectra demonstrates strong mode coupling between the two mode. This strong mode coupling is corresponding to vacuum-Rabi oscillation.In conclusion,we have studied fundamental issues for future quantum microcavity lasers including fabrication of the quantum wires/dot and interaction between confined excitons and confined photons. The results demonstrated here are useful for further investigation of ultimate light emitters.

现在，完全控制电子和光子对于未来的光发射器建立系统是非常重要的。在本研究项目中，我们研究了利用量子线/点和光学微腔完全控制电子和光子的量子微腔激光器。首先，我们研究了用MOCVD（金属有机化学气相沉积）技术制备量子线和量子点。我们获得了横向宽度小于10nm且量子效率高的砷化镓量子线。光致发光和磁致光发光清楚地表明量子线效应的存在。光致发光衰减时间的测量证明了激子寿命与量子线尺寸之间的相关性。应变InGaAs量子线也被成功制造。此外，我们使用类似的MOCVD方法制备了GaAs点结构。到目前为止，最小的结构是横向尺寸为25nm的量子点。光致发光是由微观结构得到的。其次，研究微腔效应，从而控制激子与微腔模式之间的相互作用。反射率光谱的测量表明两种模式之间存在强模式耦合。这种强模耦合对应于真空-拉比振荡。最后，我们对未来量子微腔激光器的基本问题进行了研究，包括量子线/量子点的制备和受限激子与受限光子之间的相互作用。本文的结果对进一步研究最终光发射体具有重要意义。