Development of Blue-Violet GaN Microcavity Surface-Emitting Lasers far Next-Generation Optical Memory Systems

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We have developed fundamental technologies for current-injected GaN-based blue violet vertical-cavity surface-emitting lasers.1.Realization of high-reflectivity n-type AlGaN/GaN distributed Bragg reflectorWe have successfully grown high-reflectivity n-type AlGaN/GaN distributed Bragg reflectors by metalorganic chemical vapor deposition. The flow rate of carrier gases under the DBR growth has been found to be one of the most important parameters to improve uniformity of those samples. With this uniformity, as well as precise control of the growth temperature, we have obtained very high quality, electrically conductive DBRs with maximum reflectivity of over 99%.2.Development of device fabrication processes suitable for nitride semiconductor surface-emitting device arraysWe have developed double-layer photoresist techniques with good adhesive properties and undercut profiles. Using this technique, we can expel better productivity in GaN-based VCSEL array fabrication. InGaN microcavity surface-emitting LIDS with these newly-developed techniques have been successfully fabricated and characterized. Gear evidences of microcavity effects have been observed in the fabricated LEDs.3.Pioneered growth technologies for GaN-based quantum dotsUsing self-assembling growth technique, we have succeeded in obtaining lasing action in an edge-emitting laser structure with InGaN QDs under optical excitation. We have also established self-assembled GaN QDs of high quality and high density under very low VIII ratio.