Development of Blue-Violet GaN Microcavity Surface-Emitting Lasers far Next-Generation Optical Memory Systems

开发蓝紫 GaN 微腔表面发射激光器下一代光学存储系统

• 批准号: 13355015
• 负责人: ARAKAWA Yasuhiko
• 金额: $ 31.78万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13355015/
• 关键词: microcavities; quantum dots; GaN; surface-emitting LEDs; surface-emitting lasers; MOCVD; crystal growth; device processes; 窒化ガリウム; GaN; InGaN; 半導体レーザ; 量子井戸; 化合物半導体

We have developed fundamental technologies for current-injected GaN-based blue violet vertical-cavity surface-emitting lasers.1.Realization of high-reflectivity n-type AlGaN/GaN distributed Bragg reflectorWe have successfully grown high-reflectivity n-type AlGaN/GaN distributed Bragg reflectors by metalorganic chemical vapor deposition. The flow rate of carrier gases under the DBR growth has been found to be one of the most important parameters to improve uniformity of those samples. With this uniformity, as well as precise control of the growth temperature, we have obtained very high quality, electrically conductive DBRs with maximum reflectivity of over 99%.2.Development of device fabrication processes suitable for nitride semiconductor surface-emitting device arraysWe have developed double-layer photoresist techniques with good adhesive properties and undercut profiles. Using this technique, we can expel better productivity in GaN-based VCSEL array fabrication. InGaN microcavity surface-emitting LIDS with these newly-developed techniques have been successfully fabricated and characterized. Gear evidences of microcavity effects have been observed in the fabricated LEDs.3.Pioneered growth technologies for GaN-based quantum dotsUsing self-assembling growth technique, we have succeeded in obtaining lasing action in an edge-emitting laser structure with InGaN QDs under optical excitation. We have also established self-assembled GaN QDs of high quality and high density under very low VIII ratio.

开发了电流注入GaN基蓝紫色垂直腔面发射激光器的基础技术。1.高反射率n型AlGaN/GaN分布式布拉格反射器的实现利用金属有机化学气相沉积法成功生长了高反射率n型AlGaN/GaN分布式布拉格反射器。已发现 DBR 生长下载气的流速是提高这些样品均匀性的最重要参数之一。凭借这种均匀性以及对生长温度的精确控制，我们获得了非常高质量的导电 DBR，最大反射率超过 99%。2.开发适合氮化物半导体表面发射器件阵列的器件制造工艺我们开发了具有良好粘合性能和底切轮廓的双层光刻胶技术。利用这项技术，我们可以在基于 GaN 的 VCSEL 阵列制造中提高生产效率。采用这些新开发技术的 InGaN 微腔表面发射 LIDS 已成功制造并表征。在所制造的LED中观察到了微腔效应的证据。3.开创性的GaN基量子点生长技术利用自组装生长技术，我们成功地在光学激发下在InGaN量子点的边发射激光器结构中获得了激光作用。我们还在非常低的VIII比率下建立了高质量、高密度的自组装GaN量子点。

项目成果

Masahiro NOMURA: "Differential Absorption in InGaN Multiple Quantum Wells and Epilayers Induced by Blue-Violet Laser Diode"Jpn.J.Appl.Phys.. Vol.43, No.3A. L340-L342 (2004)

Masahiro NOMURA：“蓝紫激光二极管诱导的 InGaN 多量子阱和外延层中的差分吸收”Jpn.J.Appl.Phys.. Vol.43，No.3A。

M.-S.Nomura, M.Arita, S.Ashihara, S.Kako, M.Nishioka, Y.Arakawa, T.Shimura, K.Kuroda: "Thickness dependence of transient absorption spectrum for InGaN thin films"physica status solidi (c). Vol.0,No.7. 2606-2609 (2003)

M.-S.Nomura、M.Arita、S.Ashihara、S.Kako、M.Nishioka、Y.Arakawa、T.Shimura、K.Kuroda：“InGaN 薄膜瞬态吸收光谱的厚度依赖性”物理状态固体

K.Kyhm: "Analysis of gain saturation in In[sub O.02]Ga[sub O.98]N/In [sub O.16]Ga[sub O.84]N multiple quantum wells"Appl. Phys. Lett. Vol.79. 3434-3436 (2001)

K.Kyhm：“In[sub O.02]Ga[sub O.98]N/In [sub O.16]Ga[sub O.84]N 多量子阱增益饱和分析”Appl。

Masahiro NOMURA, Munetaka ARITA, Satoshi ASHIHARA, Masao NISHIOKA, Yasuhiko ARAKAWA, Tsutomu SHIMURA, Kazuo KURODA: "Differential Absorption in InGaN Multiple Quantum Wells and Epilayers Induced by Blue-Violet Laser Diode"Japanese Journal of Applied Physi

Masahiro NOMURA、Munetaka ARITA、Satoshi ASHIHARA、Masao NISHIOKA、Yasuhiko ARAKAWA、Tsutomu SHIMURA、Kazuo KURODA：“蓝紫激光二极管诱导的 InGaN 多量子阱和外延层中的差分吸收”日本应用物理学杂志

Masahiro Nomura, Munetaka Arita, Yasuhiko Arakawa, Satoshi Ashihara, Satoshi Kako, Masao Nishioka, Tutomu Shimura, Kazuo Kuroda: "Nondegenerate pump and probe spectroscopy in InGaN thin films"Journal of Applied Physic. Vol.94, No.11. 6468-6471 (2003)

Masahiro Nomura、Munetaka Arita、Yasuhiko Arakawa、Satoshi Ashihara、Satoshi Kako、Masao Nishioka、Tutomu Shimura、Kazuo Kuroda：“InGaN 薄膜中的非简并泵浦和探针光谱”应用物理学杂志。