Quantum Semiconductor Electronics

量子半导体电子

• 批准号: 07044120
• 负责人: ARAKAWA Yasuhiko
• 金额: $ 8.26万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1997
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07044120/
• 关键词: Mesoscopic; Quantum Nano-Structures; Quantum Dot; Super lattice; Resonant Tunneling; Single electron; One-Dimensional Structures; Semiconductor

(1) Nano-scale semiconductor structures are fabricated using selective crystal growth or electron beam lithography technique. The archived size is about 10 nm. Moreover, Semiconductor nano-crystals of InAs or Si whose size is less than 10 nm are successfully formed using self-organization mechanism in the initial stage of crystal growth.(2) It is found for the first time that the coherence length of the edge states which is formed at the edges of the device under very strong magnetic field is much longer than normal states. The mechanisms for the break down of the quantized Hall effect in the large current region are also clarified. It is found that the resistance of the two-dimensional electron gas in the quantized Hall regime is very sensitive to far-infrared irradiation. This effect is possibly applied to the far-infrared detectors.(3) New memory structures with InAs nano-crystals near the channel is developed. MOS memory with Si nano-crystals is also fabricated and room temperature operation of memory effects is demonstrated. Point contact MOSFETs acting as single electron transistors are successfully fabricated and single electron tunneling is observed at room temperature. Quantum effects in such small devices are also intensively investigated.

(1)纳米尺度的半导体结构是利用选择性晶体生长或电子束光刻技术制造的。存档尺寸约为10 nm。此外，在晶体生长的初始阶段，利用自组织机制成功地形成了尺寸小于10 nm的InAs或Si半导体纳米晶体。(2)首次发现在强磁场作用下，在器件边缘形成的边缘态的相干长度比正常态长得多。阐明了量子化霍尔效应在大电流区被击穿的机制。结果表明，量子化霍尔区二维电子气的电阻对远红外辐射非常敏感。这种效应可能也适用于远红外探测器。(3)开发了在沟道附近具有InAs纳米晶体的新存储器结构。还制作了具有Si纳米晶体的MOS存储器，并展示了室温操作的存储效应。成功地制备了单电子晶体管的点接触MOSFET，并在室温下观察到了单电子隧穿。在这样的小设备的量子效应也进行了深入的研究。

项目成果

S. Suzuki: "Coherent transport through electron wave directional coupling structures" Japanese Journal of Applied Physics, part 1. 34. 4449-4451 (1995)

S. Suzuki：“通过电子波定向耦合结构的相干传输”日本应用物理学杂志，第 1. 34. 4449-4451 部分 (1995)

S.Ozaki: "Obsevation of resonant opticcal-phonon assisted tunneling in asymmetric double guantum wells" Journal of Applied Physics. 83,2. 962-965 (1998)

S.Ozaki：“非对称双量子阱中共振光学声子辅助隧道效应的观察”应用物理学杂志。

S.Tsujino, C.Metzner: "Saturation of Intersubband Absorption by Real-Space Transfer in Modulation Doped single GaAs-AlAs Quantum Well" Physica Status Solidi (b). 204. 162 (1997)

S.Tsujino、C.Metzner：“调制掺杂单 GaAs-AlAs 量子阱中实空间传输引起的子带间吸收饱和”Physica Status Solidi (b)。

M.Rufenacht: "Oscillatory Behavior of Relaxation of Hot Electrons in a Biased Charge Transfer Double Quantum Well" Physica Status Solidi (b). 204. 151 (1997)

M.Rufenacht：“偏置电荷转移双量子阱中热电子弛豫的振荡行为”物理状态固体 (b)。

T.Hiramoto: "Room Temperrature Coulomb Blockade and Low Temperrature Hopping Trasport in a Multi-Dot-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor" Japanese Journal of Applied Physics. 36. 4139-4142 (1997)

T.Hiramoto：“多点通道金属氧化物半导体场效应晶体管中的室温库仑封锁和低温跳跃传输”日本应用物理学杂志。