Quantum Semiconductor Electronics

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(1) Nano-scale semiconductor structures are fabricated using selective crystal growth or electron beam lithography technique. The archived size is about 10 nm. Moreover, Semiconductor nano-crystals of InAs or Si whose size is less than 10 nm are successfully formed using self-organization mechanism in the initial stage of crystal growth.(2) It is found for the first time that the coherence length of the edge states which is formed at the edges of the device under very strong magnetic field is much longer than normal states. The mechanisms for the break down of the quantized Hall effect in the large current region are also clarified. It is found that the resistance of the two-dimensional electron gas in the quantized Hall regime is very sensitive to far-infrared irradiation. This effect is possibly applied to the far-infrared detectors.(3) New memory structures with InAs nano-crystals near the channel is developed. MOS memory with Si nano-crystals is also fabricated and room temperature operation of memory effects is demonstrated. Point contact MOSFETs acting as single electron transistors are successfully fabricated and single electron tunneling is observed at room temperature. Quantum effects in such small devices are also intensively investigated.