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High speed photon-electron interaction in semiconductor nanostructures and its application to high performance semiconductor lasers

半导体纳米结构中的高速光子-电子相互作用及其在高性能半导体激光器中的应用

基本信息

批准号：
07405018
负责人：
ARAKAWA Yasuhiko
金额：
$ 22.59万
依托单位：
University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1995
资助国家：
日本
起止时间：
1995 至 1997
项目状态：
已结题

项目摘要

Since the first proposal of quantum dot lasers in 1982, the progress on semiconductor nanostructure has been remarkable, giving a great impact on slid state physics and electrnics. However, owing to insufficient investigation of fabrication technology and physics of Quantum dots, at present stage, the quantum dot laser has not achieved high laser performance which was predicted initially.In this research, based on the investigation of fabrication technology and physics of quantum dots, we aim at establishing basis of technology for quantum dot lasers which can be applied to communication systems. We have developed as a new fabrication technique for the quantum dots, we formed two-dimensional v-groove structures and then grew GaAs or InGaAs quantum dots. Even vertical quantum wires can be also formed using this technique. We also succeeded in developing low-temperature near-field scanning optical microscope at low temperature with a magnet for single quantum dot spectroscopy. We have succeed in observing Zeeman spin splitting in a single quantum dot.Furthermore, we developed low temperature STM luminescence systems and obtained spatially resolved luminescence from a single quantum dot.On the basis of the above results, we fabricated an InGaAs quantum dot laser with microcavity. pico-second pulse generation was achieved. In addition, effect of photonic crystal on photon mode was also discussed.The results obtained in this project is useful for information and communication technologies in the 21st century.

自1982年首次提出量子点激光器以来，半导体纳米结构的研究取得了令人瞩目的进展，对滑态物理和电学产生了重大影响。然而，由于对量子点的制备技术和物理特性研究不足，现阶段量子点激光器还没有达到最初预测的高激光性能，本研究旨在通过对量子点制备技术和物理特性的研究，为量子点激光器应用于通信系统奠定技术基础。我们发展了一种新的量子点制造技术，形成二维V型槽结构，然后生长GaAs或InGaAs量子点。甚至垂直量子线也可以使用这种技术形成。我们还成功地开发了低温近场扫描光学显微镜，在低温下与一个磁铁的单量子点光谱。我们成功地观察到了单个量子点中的自旋塞曼分裂，并在此基础上研制了低温STM发光系统，获得了单个量子点的空间分辨发光，在此基础上，我们制作了具有微腔结构的InGaAs量子点激光器。实现了皮秒脉冲的产生。此外，还讨论了光子晶体对光子模式的影响，所得结果对世纪的信息和通信技术有一定的参考价值。