Development of Semiconductor Lasers with Microcavity and Quantum Wires

微腔和量子线半导体激光器的开发

• 批准号: 06555100
• 负责人: ARAKAWA Yasuhiko
• 金额: $ 8.45万
• 依托单位: UNIVERSITY OF TOKYO
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06555100/
• 关键词: Quantum Nanostructures; MOCVD; Quantum Wires; Quantum Box; Microcavity; Lasers; Compound Semiconductors; Optical Devices; 歪構造; 半導体レーザ; 量子ドット; ステップエッジ

For the ultra-high speed optical network system with ultra-high channel capacity in the 21th century, it is indispensable to develop light sources which are suitable for high integration with both the time-axis and the spatial axis. Therefore, new type of semiconductor lasers of the next generation strongly requested to be established.In this study a strained InGaAs quantum wire laser with a vertical microcavity structures was fabricated for the first time. Quantum wires and dots are important for highly efficient semiconductor lasers. In this laser structure, quantum wires with a lateral width of about 10nm were grown by a selective metal organic chemical vapor deposition (MOCVD) technique. The length of the microcavity was 41 (1=883nm), with AlAs/AlGaAs distributed Bragg reflectors. The microcavity effect was demonstrated by the measurement of photoluminescence with and without the cavity. Lasing oscillation was observed at 77K by optical pumping.In this research program, we also investigated the microcavity quantum dot lasers. For this purpose, we first investigated fabrication technology for the InGaAs/GaAs quantum dots using the self-assembling growth technique. The size of the quantum dots is around 15nm. We succeeded in fabricating a vertical cavity quantum dot laser structures.These results are quite useful for establishing semiconductor laser technology for the 21th century.

对于世纪具有超高信道容量的超高速光网络系统来说，研制适合于时间轴和空间轴高度集成的光源是必不可少的。本研究首次研制出了具有垂直微腔结构的应变InGaAs量子线激光器。量子线和量子点对于高效半导体激光器是重要的。在该激光器结构中，通过选择性金属有机化学气相沉积（MOCVD）技术生长了横向宽度约10 nm的量子线。微腔长度为41（1= 883 nm），采用AlAs/AlGaAs分布布拉格反射器。通过测量有无微腔的光致发光，证实了微腔效应的存在。在77 K温度下，利用光抽运观察到了激光振荡。为此，我们首先研究了利用自组装生长技术制备InGaAs/GaAs量子点的工艺。量子点的尺寸约为15 nm。我们成功地制作了垂直腔量子点激光器结构，这些结果对于建立世纪的半导体激光器技术具有重要意义。

项目成果

Y. Nagamine, T. Tanaka, T. Kono, S.Tsukamoto, M. Nishioka, Y. Arakawa, K. Uchida: "Observation of enhanced lateral confinement of excitions in GaAs auantum wires various sizes (7-30nm)by magnetopotluminescerce" Appl. Phys. Lett.66(19). 2502-2504 (1995)

Y. Nagamine、T. Tanaka、T. Kono、S.Tsukamoto、M. Nishioka、Y. Arakawa、K. Uchida：“通过磁电致发光观察不同尺寸（7-30nm）的砷化镓金线中激发的增强横向限制”

M.Willatzen: "〃Polarization Dependence of Optoelectronic Properties in Quantum Dots and Quantum Wires---Consequences of Valence-Band Mixing〃" IEEE J.of Quantum Electronics. Vol.30. 640-653 (1994)

M. Willatzen：“量子点和量子线中光电特性的偏振依赖性——价带混合的后果”，IEEE J.of Quantum Electronics 第 30 卷（1994 年）。

T.Kono: "〃Excutive Radiative Lifetime in GaAs Quantum Wires:Wire Width Dependence〃" Springer Series in Materials Science. Vol.31. 140-144 (1994)

T.Kono：“GaAs 量子线的执行辐射寿命：线宽度依赖性”Springer 系列材料科学第 31 卷（1994 年）。

Y.Nagamune: "〃Magneto-optical efffect in GaAs quantum wires:wire width dependence〃" Springer Series in Materials Science. Vol.31. 145-147 (1994)

Y.Nagamune：“GaAs 量子线中的磁光效应：线宽度依赖性”Springer 系列材料科学第 31 卷（1994 年）。

R.J.Helkey: "〃Cavity Optimization for Minimum Pulsewidth of Gain-Switched Semiconductor Lasers〃" IEEE Photonics Technology Letters. Vol.7. (1995)

R.J.Helkey：“增益开关半导体激光器最小脉宽的腔优化”IEEE 光子技术快报第 7 卷（1995 年）。