Development of Semiconductor Lasers with Microcavity and Quantum Wires

点击翻译按钮获取中文摘要

For the ultra-high speed optical network system with ultra-high channel capacity in the 21th century, it is indispensable to develop light sources which are suitable for high integration with both the time-axis and the spatial axis. Therefore, new type of semiconductor lasers of the next generation strongly requested to be established.In this study a strained InGaAs quantum wire laser with a vertical microcavity structures was fabricated for the first time. Quantum wires and dots are important for highly efficient semiconductor lasers. In this laser structure, quantum wires with a lateral width of about 10nm were grown by a selective metal organic chemical vapor deposition (MOCVD) technique. The length of the microcavity was 41 (1=883nm), with AlAs/AlGaAs distributed Bragg reflectors. The microcavity effect was demonstrated by the measurement of photoluminescence with and without the cavity. Lasing oscillation was observed at 77K by optical pumping.In this research program, we also investigated the microcavity quantum dot lasers. For this purpose, we first investigated fabrication technology for the InGaAs/GaAs quantum dots using the self-assembling growth technique. The size of the quantum dots is around 15nm. We succeeded in fabricating a vertical cavity quantum dot laser structures.These results are quite useful for establishing semiconductor laser technology for the 21th century.