Study on Fabrication of Quantum Wire Lasers

实现高性能的半导体激光器是未来信息传输和处理系统的重要组成部分。为此，使用量子纳米结构是有用的。1982年，我们提出了量子线和量子点激光器来改善激光特性。我们预测，使用量子纳米结构会导致激光特性和动态特性的显著降低。在本研究项目中，我们打算使用MOCVD生长技术制造量子线激光器。首先，我们采用MOCVD选择性生长的方法在SiO2图案衬底上制备了GaAs量子线结构。得到横向宽度为10nm的GaAs量子线，光致发光峰蓝移一致，磁致光结果一致。第二年，利用该技术，我们首次成功地制造了垂直腔量子线激光器。在77K时观察到激光振荡。这一结果证明了附加光子约束的量子线激光器的可行性。

It is important to realize semiconductor lasers with high performance for future information transmission and processing systems. For this purpose, the use of the quantum nano-structure is useful. In 19882, we proposed the quantum wire and dot lasers to improve lasing characteristics. We predicted that the use of the quantum nano-structure leads to significant reduction of the lasing characteristis and dynamic properries.In this research project, we intended to fabricate the quantum wire lasers using an MOCVD growth technique. First, we fabricated the GaAs quantum wire structures using the MOCVD selective growth on SiO2 patterned substrate. As a result, GaAs quantum wires with 10nm lateral width is obtained with consistent blue shift of the photoluminescence peak as well as magneto-photoluminescence results. In the second year, using this technique, we succeeded in fabricating vertical cavity quantum wire lesers for the first time. Lasing oscillation was observed at 77K.This results demonstrate feasibility of the quantum wire lasers with additional confinement of photons.