Fabrication of quantum dot lasers

本项目的目标是建立量子点激光器的器件技术，在1.3 - 1.5mm波长范围内优化自组装InAs量子点激光器，这对于光通信应用是非常重要的。最后，通过将InAs量子点不是嵌入GaAs而是嵌入InGaAs以抑制应变效应，实现了1.52mm波长的光发射。此外，我们还发展了选择性生长技术，在光子晶体中引入量子点，理论上证明了量子点在GaN基系统中的激光器结构比在GaAs系统中的激光器结构有更大的改善。此外，我们建立了用于激光应用的GaN基蓝光量子点的生长条件。最后，我们成功地在室温下用光泵浦的方法运行了InGaN量子点激光器。我们还展示了用于紫外激光应用的AlN上的GaN量子点。总之，我们成功地制造了量子点激光器，并为未来的光子网络IT技术建立了材料生长技术。

This project is organized to establish device technologies aiming at bringing the quantum dot lasers into commercial market in thenear future.We succeeded in optimizing self-assembled InAs quantum dots at the wavelength range from 1.3 -1.5 mm which is very important for optical communication applications. Finally 1.52 mm wavelength light emission was achieved by embedding InAs quantum dots not by GaAs but by InGaAs to suppress strain effects. In addition, quantum dot laser structures involving photonic crystals by developing selective era growth technique.We have shown theoretically improvement ratio by introducing quantum dots in GaN-bases systems is much bigger than that in GaAs systems. In addition we established growth condition for blue light emitting GaN-based quantum dot for laser applications. Finally we succeeded in operating InGaN quantum dot lasers at room temperature by optical pumping method. We also show GaN quantum dots on A1N for UV laser applications.In summary, we have succeeded in fabricating quantum dot lasers and establishing material growth technology for future photonic network IT technologies.