Fabrication of quantum dot lasers

量子点激光器的制造

• 批准号: 10355004
• 负责人: ARAKAWA Yasuhiko
• 金额: $ 21.57万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10355004/
• 关键词: Quantum dots; MOCVD; MBE; Semicondcutor lasers; Self-assembling growth; GaN; Quantum effects; InAs; 半導体; ナノ構造

This project is organized to establish device technologies aiming at bringing the quantum dot lasers into commercial market in thenear future.We succeeded in optimizing self-assembled InAs quantum dots at the wavelength range from 1.3 -1.5 mm which is very important for optical communication applications. Finally 1.52 mm wavelength light emission was achieved by embedding InAs quantum dots not by GaAs but by InGaAs to suppress strain effects. In addition, quantum dot laser structures involving photonic crystals by developing selective era growth technique.We have shown theoretically improvement ratio by introducing quantum dots in GaN-bases systems is much bigger than that in GaAs systems. In addition we established growth condition for blue light emitting GaN-based quantum dot for laser applications. Finally we succeeded in operating InGaN quantum dot lasers at room temperature by optical pumping method. We also show GaN quantum dots on A1N for UV laser applications.In summary, we have succeeded in fabricating quantum dot lasers and establishing material growth technology for future photonic network IT technologies.

本项目的目标是建立量子点激光器的器件技术，在1.3 - 1.5mm波长范围内优化自组装InAs量子点激光器，这对于光通信应用是非常重要的。最后，通过将InAs量子点不是嵌入GaAs而是嵌入InGaAs以抑制应变效应，实现了1.52mm波长的光发射。此外，我们还发展了选择性生长技术，在光子晶体中引入量子点，理论上证明了量子点在GaN基系统中的激光器结构比在GaAs系统中的激光器结构有更大的改善。此外，我们建立了用于激光应用的GaN基蓝光量子点的生长条件。最后，我们成功地在室温下用光泵浦的方法运行了InGaN量子点激光器。我们还展示了用于紫外激光应用的AlN上的GaN量子点。总之，我们成功地制造了量子点激光器，并为未来的光子网络IT技术建立了材料生长技术。

项目成果

K.Yamanaka,K.Suzuki,S.Ishida,and Y.Arakawa: "Light Emission from Individual Self-assembled InAs/GaAs Quantum Dots Excited by Tunneling" Current injection",Appl.phys.Lett.Vol.73,No.11. 1460-1462 (1998)

K.Yamanaka、K.Suzuki、S.Ishida 和 Y.Arakawa：“通过隧道电流注入激发的单个自组装 InAs/GaAs 量子点的光发射”，Appl.phys.Lett.Vol.73，No。

J.C.Harris, T.Someya, K.Hoshino, S.Kako, Y.Arakawa: "Photoluminescence of GaN Quantum Wells with AlGaN Barriers of Hight Aluminium Content"Physica. stat. sol. (a) 180. 339 (2000)

J.C.Harris、T.Someya、K.Hoshino、S.Kako、Y.Arakawa：“具有高铝含量 AlGaN 势垒的 GaN 量子阱的光致发光”物理学。

O.Moriwaki, T.Someya, K.Tachibana, S.Ishida, Y.Arakawa: "Narrow photoluminescence peaks from localized states in InGaN quantum dot structures"Appl. Phys. Lett.. Vol.76,No.17. 2361-2363 (2000)

O.Moriwaki、T.Someya、K.Tachibana、S.Ishida、Y.Arakawa：“InGaN 量子点结构中局域态的窄光致发光峰”Appl。

T.Someya, Y.Arakawa, R.Werner, A.Forchel: "Growth and structural characterization of InGaN vertical cavity surface emitting lasers operating at room temperature"Physica Status Solidi 176. 63-66 (1999)

T.Someya、Y.Arakawa、R.Werner、A.Forchel：“室温下运行的 InGaN 垂直腔表面发射激光器的生长和结构表征”Physica Status Solidi 176. 63-66 (1999)

T.Saito, Y.Arakawa: "Atomic structure and phase stability of InxGal-xN random alloys calculated using a valence-force-field method"Physical Review B. Vol.60. 1701 (1999)

T.Saito、Y.Arakawa：“使用价力场方法计算的 InxGal-xN 随机合金的原子结构和相稳定性”《物理评论 B》第 60 卷。