Development of semiconductor integrated devices for coherent THz electromagnetic field generation

对信息技术日益增长的需求要求开发新的电磁波频段。尤其是。太赫兹的频率范围还没有得到很好的实际应用。在这项研究中，我们打算开发产生相干太赫兹电磁场的半导体集成器件，作为构建2L^&lt；st&gt；世纪T比特信息网络系统的基础技术。我们的目标是为太赫兹和飞秒技术的实际应用做出贡献。首先，我们利用低温砷化镓生长和集成光导偶极天线的方法研制了一种新型的太赫兹探测装置，用于太赫兹电磁场的辐照和探测。结果。与传统类型的探测器相比，灵敏度提高了25倍。接下来，我们设计并开发了用于新型相干太赫兹电磁波发生器的微腔量子阱结构。它利用了我们在1992年发现的半导体中的空腔极化效应。通过测量光泵器件的反射率响应，我们成功地观测到了器件输出的THz调制光信号。这一结果部分地奠定了新型太赫兹电磁波发生器的基础，它对21世纪的信息和通信技术，包括微波光子学具有重要意义。

Increasing demand for info-corn technology requires development of new frequency region of electromagnetic wave. Paricularly. the frequency range of THz has not been well devloped for practical applications.In this research, we intended to develop semiconductor integrated devices for generating coherent THz electromagnetic field as a fundamental technologies for constructing T-bit information network systems in the 2L^<st> century. We aim at contributing to practical application of THz and femtosecond technologies.First, we developed a new THz detection devices by using low temperatiure GaAs growth and integration of photoconductive dipole antenna for irradiation and detection of THz electromagnetic field. As a result. sensitivity is improved by a factor of 25 compared to conventional type of detector. Next, we designed and developed microcavity quantum well structures for new type of coherent THz electromagnetic wave generator. This utilizes cavity polariton effect in semiconductors which was discovered by ourselves in 1992. By measuring reflectivity response of the device which was photo-pumped, we succeed in observing THz modulated optical signal form the device. This results partly establish fundamentals of a new type THz electromagnetic wave generator, which is important for information and communication technologies in the 21st century including microwave photonics.