Ion implantation doping of gallium nitride for high performance electronic devices

用于高性能电子器件的氮化镓的离子注入掺杂

• 批准号: DP0559840
• 负责人: Prof Giacinta Parish
• 金额: $ 47.4万
• 依托单位: The University of Western Australia
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2005
• 资助国家: 澳大利亚
• 起止时间: 2005-02-08 至 2008-12-23
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP0559840
• 关键词: Ion; implantation; doping; gallium; nitride

This project forms part of a long-term, international research program into the development of high-power, high-frequency electronics for high performance radar and communications systems. The advanced fabrication technologies and designs being investigated in this project fall well within the designated priority goal of Frontier Technologies. Gallium nitride technology is also of high interest to defence organisations, as radar and satellite-communications links, which operate at frequencies ranging from hundreds of MHz to tens of GHz, often have high power-amplification requirements. The project therefore also falls within the priority goal of Transformational Defence Technologies.

该项目是一个长期的国际研究计划的一部分，该计划旨在为高性能雷达和通信系统开发高功率，高频电子产品。先进的制造技术和设计正在研究在这个项目中完全属于指定的优先目标的前沿技术。氮化镓技术也引起了国防组织的高度兴趣，因为雷达和卫星通信链路的工作频率从数百MHz到数十GHz不等，通常具有很高的功率放大要求。因此，该项目也属于转型国防技术的优先目标之福尔斯。