Ion implantation doping of gallium nitride for high performance electronic devices

点击翻译按钮获取中文摘要

This project forms part of a long-term, international research program into the development of high-power, high-frequency electronics for high performance radar and communications systems. The advanced fabrication technologies and designs being investigated in this project fall well within the designated priority goal of Frontier Technologies. Gallium nitride technology is also of high interest to defence organisations, as radar and satellite-communications links, which operate at frequencies ranging from hundreds of MHz to tens of GHz, often have high power-amplification requirements. The project therefore also falls within the priority goal of Transformational Defence Technologies.